페이지 111 - ISSI, Integrated Silicon Solution Inc 제품

부품 번호	제조업체	설명	패키지	재고
IS46LD32320A-3BPLA25	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: 168-VFBGA	재고4,032
IS49NLS96400-25BI	ISSI, Integrated Silicon Solution Inc	IC DRAM 576MBIT 400MHZ 144BGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (64M x 9) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-FCBGA (11x18.5)	패키지: 144-TFBGA	재고4,064
IS42RM32800D-75BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 2.3 V ~ 3 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고5,280
IS25LD020-JKLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 2MBIT 100MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 100MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: 8-WDFN Exposed Pad	재고3,136
IS42S16160D-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x13)	패키지: 54-TFBGA	재고3,344
IS42S16320B-7TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고385,272
IS61QDB42M18-250M3	ISSI, Integrated Silicon Solution Inc	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QUAD Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (15x17)	패키지: 165-LBGA	재고6,288
IS61LF204818B-7.5TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 36MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고7,712
IS61DDB41M18A-250M3L	ISSI, Integrated Silicon Solution Inc	IC SDRAM 18MBIT 250MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (15x17)	패키지: 165-LBGA	재고5,808
IS61LV12824-10TQI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 3MBIT 10NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 3Mb (128K x 24) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고5,504
IS46TR16128C-125KBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고5,200
IS43QR16256A-093PBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 1.05GHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.05GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-BGA Supplier Device Package: 96-BGA	패키지: 96-BGA	재고6,144
IS43DR86400E-3DBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 333MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x8)	패키지: 60-TFBGA	재고4,112
IS43TR85120AL-125KBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	패키지: 78-TFBGA	재고6,384
IS61WV51216BLL-10TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고154,464
IS25WP032D-RMLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 32M SPI 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: 8ns Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고5,328
IS61QDPB42M36A1-550B4LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 72M PARALLEL 165LFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 550MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-LFBGA (13x15)	패키지: 165-LBGA	재고2,992
IS61VF51236A-7.5B3I-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고4,832
IS25WP128F-RMLE-TR	ISSI, Integrated Silicon Solution Inc	128Mb QPI/QSPI, 16-pin SOP 300Mi Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 40µs, 800µs Access Time: - Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote
IS62WV12816FBLL-45TLI	ISSI, Integrated Silicon Solution Inc	2Mb, Low Power/Power Saver,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: -	Request a Quote
IS62WV10248HBLL-45B2LI-TR	ISSI, Integrated Silicon Solution Inc	8Mb, Low Power/Power Saver,Async Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: -	Request a Quote
IS22TF08G-JCLA1	ISSI, Integrated Silicon Solution Inc	IC FLASH 64GBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (pSLC) Memory Size: 64Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	패키지: -	Request a Quote
IS25LQ512B-JVLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 512KBIT SPI/QUAD 8VVSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Kbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 800µs Access Time: 8 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-VVSOP	패키지: -	Request a Quote
IS43LQ32128A-062TBLI-TR	ISSI, Integrated Silicon Solution Inc	4G, 1.06-1.17/1.70-1.95V, LPDDR4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote
IS46LQ16256A-062BLA2-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +105C), 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	패키지: -	Request a Quote
IS42S16800J-7TLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128MBIT PAR 54TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: -	Request a Quote
IS46TR16512B-125KBLA1	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 8G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (10x14)	패키지: -	Request a Quote
IS61WV102416EDALL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	16Mb,High-Speed,Async,1Mbx16, 10 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 1.65V ~ 2.2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: -	Request a Quote

IS46LD32320A-3BPLA25

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

재고4,032

IS49NLS96400-25BI

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 400MHZ 144BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (64M x 9)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FCBGA (11x18.5)

패키지: 144-TFBGA

재고4,064

IS42RM32800D-75BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 2.3 V ~ 3 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고5,280

IS25LD020-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 2MBIT 100MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: 8-WDFN Exposed Pad

재고3,136

IS42S16160D-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x13)

패키지: 54-TFBGA

재고3,344

IS42S16320B-7TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고385,272

IS61QDB42M18-250M3

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUAD
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)

패키지: 165-LBGA

재고6,288

IS61LF204818B-7.5TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고7,712

IS61DDB41M18A-250M3L

ISSI, Integrated Silicon Solution Inc

IC SDRAM 18MBIT 250MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)

패키지: 165-LBGA

재고5,808

IS61LV12824-10TQI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 3MBIT 10NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 3Mb (128K x 24)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고5,504

IS46TR16128C-125KBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고5,200

IS43QR16256A-093PBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 1.05GHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.05GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-BGA
Supplier Device Package: 96-BGA

패키지: 96-BGA

재고6,144

IS43DR86400E-3DBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 333MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x8)

패키지: 60-TFBGA

재고4,112

IS43TR85120AL-125KBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

패키지: 78-TFBGA

재고6,384

IS61WV51216BLL-10TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고154,464

IS25WP032D-RMLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 32M SPI 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: 8ns
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고5,328

IS61QDPB42M36A1-550B4LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 72M PARALLEL 165LFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 550MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (13x15)

패키지: 165-LBGA

재고2,992

IS61VF51236A-7.5B3I-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고4,832

IS25WP128F-RMLE-TR

ISSI, Integrated Silicon Solution Inc

128Mb QPI/QSPI, 16-pin SOP 300Mi

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 40µs, 800µs
Access Time: -
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: -

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IS62WV12816FBLL-45TLI

ISSI, Integrated Silicon Solution Inc

2Mb, Low Power/Power Saver,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: -

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IS62WV10248HBLL-45B2LI-TR

ISSI, Integrated Silicon Solution Inc

8Mb, Low Power/Power Saver,Async

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: -

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IS22TF08G-JCLA1

ISSI, Integrated Silicon Solution Inc

IC FLASH 64GBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (pSLC)
Memory Size: 64Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

패키지: -

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IS25LQ512B-JVLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 512KBIT SPI/QUAD 8VVSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Kbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 800µs
Access Time: 8 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-VVSOP

패키지: -

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IS43LQ32128A-062TBLI-TR

ISSI, Integrated Silicon Solution Inc

4G, 1.06-1.17/1.70-1.95V, LPDDR4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

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IS46LQ16256A-062BLA2-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

패키지: -

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IS42S16800J-7TLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 54TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

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IS46TR16512B-125KBLA1

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (10x14)

패키지: -

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IS61WV102416EDALL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,1Mbx16, 10

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 1.65V ~ 2.2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: -

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