페이지 5 - IXYS Integrated Circuits Division 제품 - PMIC - 게이트 구동기 | Heisener Electronics
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IXYS Integrated Circuits Division 제품 - PMIC - 게이트 구동기

기록 147
페이지  5/6
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IXDD630CI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
패키지: TO-220-5
재고25,032
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Non-Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDI630CI
IXYS Integrated Circuits Division

IC GATE DRIVER LOW SIDE 5TO220

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 12.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
패키지: TO-220-5
재고5,792
Single
1
IGBT, N-Channel, P-Channel MOSFET
12.5 V ~ 35 V
0.8V, 3.5V
30A, 30A
Inverting
-
11ns, 11ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDN614YI
IXYS Integrated Circuits Division

14A 5LEAD TO-263 NON INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
재고3,760
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDI614YI
IXYS Integrated Circuits Division

14A 5 LEAD TO-263 INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
재고2,656
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
IXDI614CI
IXYS Integrated Circuits Division

14A 5 PIN TO-220 INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Formed Leads
  • Supplier Device Package: TO-220-5
패키지: TO-220-5 Formed Leads
재고2,064
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Formed Leads
TO-220-5
hot IXDN614SI
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고56,796
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDI614SI
IXYS Integrated Circuits Division

14A 8LEAD SOIC EXP MTL INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고39,576
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot IXDD614SI
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INV W/ENAB

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고41,880
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDN614SITR
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,152
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDI614SITR
IXYS Integrated Circuits Division

14A 8LEAD SOIC EXP MTL INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고6,224
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDD614SITR
IXYS Integrated Circuits Division

14A 8SOIC EXP MTL NON INV W/ENAB

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고5,264
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IX2204NETR
IXYS Integrated Circuits Division

IC IGBT GATE DVR DUAL 16SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: -10 V ~ 25 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고3,056
Independent
2
IGBT
-10 V ~ 25 V
0.8V, 2V
2A, 4A
Non-Inverting
-
-, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot IXDN609YI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO263-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263-5
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
재고19,368
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263-5
hot IXDN609CI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Formed Leads
  • Supplier Device Package: TO-220-5
패키지: TO-220-5 Formed Leads
재고12,384
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Formed Leads
TO-220-5
IXDI609CI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
패키지: TO-220-5
재고4,816
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5
IXDD609YI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV TO263-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263
패키지: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
재고7,872
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
TO-263
IXDN604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고6,528
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDI604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고5,184
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDF604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,008
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Inverting, Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDD604SITR
IXYS Integrated Circuits Division

IC GATE DVR 4A DUAL HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 9ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,552
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
4A, 4A
Non-Inverting
-
9ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDI609SI
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,664
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDN609SITR
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,824
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDI609SITR
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고4,544
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IXDD609SITR
IXYS Integrated Circuits Division

IC GATE DVR 9A NON-INV 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고5,216
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
9A, 9A
Non-Inverting
-
22ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IX2113G
IXYS Integrated Circuits Division

IC GATE DRVR 600V HI/LO 14DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 9.4ns, 9.7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
패키지: 14-DIP (0.300", 7.62mm)
재고7,184
Independent
2
IGBT, N-Channel, P-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
600V
9.4ns, 9.7ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
IX21844G
IXYS Integrated Circuits Division

IC GATE DVR HALF 600V 14DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 1.4A, 1.8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 23ns, 14ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
패키지: 14-DIP (0.300", 7.62mm)
재고7,808
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2V
1.4A, 1.8A
Non-Inverting
600V
23ns, 14ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
IX2113BTR
IXYS Integrated Circuits Division

IC GATE DVR HIGH/LOW 600V 16SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 9.4ns, 9.7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.295", 7.50mm Width)
재고2,176
Independent
2
IGBT, N-Channel, P-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
2A, 2A
Non-Inverting
600V
9.4ns, 9.7ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot IXDN614PI
IXYS Integrated Circuits Division

14A 8 PIN DIP NON INVERTING

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 18ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고33,000
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 35 V
0.8V, 3V
14A, 14A
Non-Inverting
-
25ns, 18ns
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP