IXYS 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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IXYS 제품 - 다이오드 - 정류기 - 단일

기록 504
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제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
W5984TE400
IXYS

DIODE GEN PURP 4KV 5984A W94

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 5984A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 47 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W94
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
4000 V
5984A
1.25 V @ 5000 A
Standard Recovery >500ns, > 200mA (Io)
47 µs
100 mA @ 4000 V
-
Chassis Mount
DO-200AE
W94
-40°C ~ 160°C
W5282ZC240
IXYS

DIODE GEN PURP 2.4KV 5282A W7

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 5282A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W7
  • Operating Temperature - Junction: -55°C ~ 160°C
패키지: -
Request a Quote
2400 V
5282A
1.35 V @ 6000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 2400 V
-
Chassis Mount
DO-200AE
W7
-55°C ~ 160°C
DMA50I800HA
IXYS

DIODE GEN PURP 800V 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 800 V
  • Capacitance @ Vr, F: 19pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
800 V
50A
1.3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 800 V
19pF @ 400V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
M0790YC200
IXYS

DIODE GEN PURP 2KV 790A W2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 790A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 635 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W2
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
2000 V
790A
1.6 V @ 635 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
30 mA @ 2000 V
-
Clamp On
DO-200AB, A-PUK
W2
-40°C ~ 150°C
W5282ZC300
IXYS

DIODE GEN PURP 3KV 5282A W7

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3000 V
  • Current - Average Rectified (Io): 5282A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 3000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W7
  • Operating Temperature - Junction: -55°C ~ 160°C
패키지: -
Request a Quote
3000 V
5282A
1.35 V @ 6000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 3000 V
-
Chassis Mount
DO-200AE
W7
-55°C ~ 160°C
DHG55I3300FE
IXYS

DIODE GP 3.3KV 50A ISOPLUS I4PAC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 60 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.65 µs
  • Current - Reverse Leakage @ Vr: 100 µA @ 3300 V
  • Capacitance @ Vr, F: 16pF @ 1.8kV, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac™-5 (2 Leads)
  • Supplier Device Package: ISOPLUS i4-PAC™
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
3300 V
50A
3.4 V @ 60 A
Standard Recovery >500ns, > 200mA (Io)
1.65 µs
100 µA @ 3300 V
16pF @ 1.8kV, 1MHz
Through Hole
i4-Pac™-5 (2 Leads)
ISOPLUS i4-PAC™
-40°C ~ 150°C
DSP45-18A
IXYS

DIODE GEN PURP 1.8KV 45A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
  • Capacitance @ Vr, F: 18pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고17,688
1800 V
45A
1.26 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1800 V
18pF @ 400V, 1MHz
Through Hole
TO-247-3
TO-247 (IXTH)
-40°C ~ 175°C
DNA30E2200PZ-TUB
IXYS

DIODE GEN PURP 2.2KV 30A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
  • Capacitance @ Vr, F: 7pF @ 700V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
2200 V
30A
1.26 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 2200 V
7pF @ 700V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DNA30E2200PZ-TRL
IXYS

DIODE GEN PURP 2.2KV 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
  • Capacitance @ Vr, F: 7pF @ 700V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고13,338
2200 V
30A
1.26 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 2200 V
7pF @ 700V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 150°C
DSEP6-06AS-TRL
IXYS

DIODE GEN PURP 600V 6A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.02 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고13,599
600 V
6A
2.02 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
50 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-40°C ~ 175°C
DSEP6-06AS-TUB
IXYS

DIODE GEN PURP 600V 6A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 5pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
600 V
6A
2.03 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
50 µA @ 600 V
5pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA50I1200HA
IXYS

DIODE GEN PURP 1.2KV 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 19pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1200 V
50A
1.3 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
19pF @ 400V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
W4693QK050
IXYS

DIODE GEN PURP 500V 4693A WD2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 4693A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15.5 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: WD2
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
500 V
4693A
1.05 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
15.5 µs
50 mA @ 500 V
-
Clamp On
DO-200AB, B-PUK
WD2
-40°C ~ 180°C
W4693QK080
IXYS

DIODE GEN PURP 800V 4693A WD2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 4693A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15.5 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: WD2
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: -
Request a Quote
800 V
4693A
1.05 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
15.5 µs
50 mA @ 800 V
-
Clamp On
DO-200AB, B-PUK
WD2
-40°C ~ 180°C
W5984TJ360
IXYS

DIODE GEN PURP 3.6KV 5984A W89

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 5984A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 47 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W89
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
3600 V
5984A
1.25 V @ 5000 A
Standard Recovery >500ns, > 200mA (Io)
47 µs
100 mA @ 3600 V
-
Chassis Mount
DO-200AE
W89
-40°C ~ 160°C
W5984TJ400
IXYS

DIODE GEN PURP 4KV 5984A W89

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 5984A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 47 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W89
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
4000 V
5984A
1.25 V @ 5000 A
Standard Recovery >500ns, > 200mA (Io)
47 µs
100 mA @ 4000 V
-
Chassis Mount
DO-200AE
W89
-40°C ~ 160°C
DPG30IM400PC-TRL
IXYS

DIODE GEN PURP 400V 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 32pF @ 200V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
400 V
30A
1.43 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
1 µA @ 400 V
32pF @ 200V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
DPG30IM400PC-TUB
IXYS

DIODE GEN PURP 400V 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 32pF @ 200V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
400 V
30A
1.43 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
1 µA @ 400 V
32pF @ 200V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C
W5139TJ480
IXYS

DIODE GEN PURP 4.8KV 5139A W89

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4800 V
  • Current - Average Rectified (Io): 5139A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 57 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W89
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
4800 V
5139A
1.25 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
57 µs
100 mA @ 4800 V
-
Chassis Mount
DO-200AE
W89
-40°C ~ 160°C
DSS6-0025BS-TUB
IXYS

DIODE SCHOTTKY 25V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 25 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 400 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 25 V
  • Capacitance @ Vr, F: 639pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
25 V
6A
400 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 25 V
639pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 150°C
DSS6-0025BS-TRL
IXYS

DIODE SCHOTTKY 25V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 25 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 400 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6 mA @ 25 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
25 V
6A
400 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
6 mA @ 25 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 150°C
DSP45-12AZ-TUB
IXYS

DIODE GEN PURP 1.2KV 45A TO268AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 18pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA (D3Pak-HV)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
1200 V
45A
1.26 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
18pF @ 400V, 1MHz
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA (D3Pak-HV)
-40°C ~ 175°C
DPG10I600APA
IXYS

PWR DIODE DISC-FRED TO-220AB / T

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
M1104NK450
IXYS

FAST DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
M0955JK250
IXYS

DIODE GEN PURP 2.5KV 1105A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 1105A
  • Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.4 µs
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -
패키지: -
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2500 V
1105A
1.44 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
3.4 µs
-
-
Clamp On
DO-200AB, B-PUK
W113
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DCG35C1200HR
IXYS

DIODE SCHOTTKY 1.2KV 18A ISO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
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1200 V
18A
1.8 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 1200 V
1.5pF @ 0V, 1MHz
Through Hole
TO-247-3
ISO247
-40°C ~ 150°C
DSS16-0045AS-TRL
IXYS

DIODE SCHOTTKY 45V 16A TO263AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
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45 V
16A
670 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 45 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
DPF30I600AHA
IXYS

POWER DIODE DISCRETES-FRED TO-24

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
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