페이지 14 - IXYS 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DLA60I1200HA	IXYS	DIODE GEN PURP 1200V 60A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.19V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 1200V Capacitance @ Vr, F: 33pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고4,576	1200V	60A	1.19V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	30µA @ 1200V	33pF @ 400V, 1MHz	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
DHG30I1200HA	IXYS	DIODE GEN PURP 1.2KV 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.26V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247 (HA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-3P-3 Full Pack	재고2,592	1200V	30A	2.26V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	50µA @ 1200V	-	Through Hole	TO-3P-3 Full Pack	TO-247 (HA)	-55°C ~ 150°C
DHF30IM600QB	IXYS	DIODE GEN PURP 600V 30A TO3P Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.36V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-3P-3, SC-65-3	재고7,104	600V	30A	2.36V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-3P-3, SC-65-3	TO-3P	-55°C ~ 150°C
DSEP30-06B	IXYS	DIODE GEN 600V 30A ISOPLUS247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.51V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247? (BR) Operating Temperature - Junction: -55°C ~ 175°C	패키지: ISOPLUS247?	재고88,116	600V	30A	2.51V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	250µA @ 600V	-	Through Hole	ISOPLUS247?	ISOPLUS247? (BR)	-55°C ~ 175°C
DHG20I1200HA	IXYS	DIODE GEN PURP 1.2KV 20A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.24V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247 (HA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-3P-3 Full Pack	재고5,008	1200V	20A	2.24V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 1200V	-	Through Hole	TO-3P-3 Full Pack	TO-247 (HA)	-55°C ~ 150°C
DPG60I400HA	IXYS	DIODE GEN PURP 400V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.47V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고7,664	400V	60A	1.47V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	1µA @ 400V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
DPF60IM400HB	IXYS	DIODE GEN PURP 400V 60A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.27V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고4,624	400V	60A	1.27V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	1µA @ 400V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
DSA1-16D	IXYS	DIODE AVALANCHE 1.6KV 2.3A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 2.3A Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Radial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Radial	재고20,400	1600V	2.3A	1.34V @ 7A	Standard Recovery >500ns, > 200mA (Io)	-	700µA @ 1600V	-	Through Hole	Radial	-	-40°C ~ 150°C
DNA30E2200PA	IXYS	DIODE GEN PURP 2.2KV 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 2200V Capacitance @ Vr, F: 7pF @ 700V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고3,840	2200V	30A	1.26V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 2200V	7pF @ 700V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
DHG20I600HA	IXYS	DIODE GEN PURP 600V 20A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.24V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247 (HA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-3P-3 Full Pack	재고7,104	600V	20A	2.24V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	25µA @ 600V	-	Through Hole	TO-3P-3 Full Pack	TO-247 (HA)	-55°C ~ 150°C
DSEP29-06AS-TUBE	IXYS	DIODE GEN PURP 600V 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.61V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,128	600V	30A	1.61V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	250µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263	-55°C ~ 175°C
DSA1-12D	IXYS	DIODE AVALANCHE 1.2KV 2.3A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2.3A Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Radial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Radial	재고5,760	1200V	2.3A	1.34V @ 7A	Standard Recovery >500ns, > 200mA (Io)	-	700µA @ 1200V	-	Through Hole	Radial	-	-40°C ~ 150°C
DPG60IM400QB	IXYS	DIODE GEN PURP 400V 60A TO3P Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.47V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-3P-3, SC-65-3	재고3,216	400V	60A	1.47V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	1µA @ 400V	-	Through Hole	TO-3P-3, SC-65-3	TO-3P	-55°C ~ 175°C
DHF30IM600PN	IXYS	DIODE GEN PURP 600V 15A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.37V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: TO-220ABFP Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3 Full Pack, Isolated Tab	재고5,776	600V	15A	2.37V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220ABFP	-55°C ~ 150°C
DSI45-08A	IXYS	DIODE GEN PURP 800V 45A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-247-2	재고4,000	800V	45A	1.28V @ 45A	Standard Recovery >500ns, > 200mA (Io)	-	20µA @ 800V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 175°C
DMA30E1800HA	IXYS	DIODE GEN PURP 1800V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 1800V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고5,568	1800V	30A	1.25V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 1800V	10pF @ 400V, 1MHz	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
DSEI36-06AS-TUBE	IXYS	DIODE GEN PURP 600V 37A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 37A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 37A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,616	600V	37A	1.6V @ 37A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
DPG30I400HA	IXYS	DIODE GEN PURP 400V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 32pF @ 200V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고7,024	400V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	1µA @ 400V	32pF @ 200V, 1MHz	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
DPG30I300HA	IXYS	DIODE GEN PURP 300V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.34V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고7,648	300V	30A	1.34V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 300V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
DHG20I1200PA	IXYS	DIODE GEN PURP 1.2KV 20A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 30µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고3,440	1200V	20A	2.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	30µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
DSEP29-06B	IXYS	DIODE GEN PURP 600V 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.52V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고6,768	600V	30A	2.52V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	250µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
DHG30I600PA	IXYS	DIODE GEN PURP 600V 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.37V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고6,544	600V	30A	2.37V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
DNA30EM2200PC	IXYS	DIODE GEN PURP 2.2KV 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 2200V Capacitance @ Vr, F: 7pF @ 700V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,664	2200V	30A	1.26V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 2200V	7pF @ 700V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
DNA30E2200PC	IXYS	DIODE GEN PURP 2.2KV 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 2200V Capacitance @ Vr, F: 7pF @ 700V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,248	2200V	30A	1.26V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 2200V	7pF @ 700V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
DSI30-16AS-TUBE	IXYS	DIODE GEN PURP 1.6KV 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 1600V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,800	1600V	30A	1.29V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 1600V	10pF @ 400V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 175°C
DHG20I600PA	IXYS	DIODE GEN PURP 600V 20A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.32V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고5,936	600V	20A	2.32V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
DHG10I1800PA	IXYS	DIODE GEN PURP 1.8KV 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.23V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 50µA @ 1800V Capacitance @ Vr, F: 3pF @ 900V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고3,264	1800V	10A	2.23V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	50µA @ 1800V	3pF @ 900V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
DSI30-08AC	IXYS	DIODE GEN 800V 30A ISOPLUS220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 45A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220? Operating Temperature - Junction: -55°C ~ 150°C	패키지: ISOPLUS220?	재고5,152	800V	30A	1.45V @ 45A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Through Hole	ISOPLUS220?	ISOPLUS220?	-55°C ~ 150°C

DLA60I1200HA

IXYS

DIODE GEN PURP 1200V 60A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.19V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 1200V
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고4,576

1200V

60A

1.19V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

30µA @ 1200V

33pF @ 400V, 1MHz

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

DHG30I1200HA

IXYS

DIODE GEN PURP 1.2KV 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.26V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247 (HA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-3P-3 Full Pack

재고2,592

1200V

30A

2.26V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

50µA @ 1200V

-

Through Hole

TO-3P-3 Full Pack

TO-247 (HA)

-55°C ~ 150°C

DHF30IM600QB

IXYS

DIODE GEN PURP 600V 30A TO3P

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.36V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-3P-3, SC-65-3

재고7,104

600V

30A

2.36V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

-

Through Hole

TO-3P-3, SC-65-3

TO-3P

-55°C ~ 150°C

DSEP30-06B

IXYS

DIODE GEN 600V 30A ISOPLUS247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.51V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247? (BR)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: ISOPLUS247?

재고88,116

600V

30A

2.51V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

250µA @ 600V

-

Through Hole

ISOPLUS247?

ISOPLUS247? (BR)

-55°C ~ 175°C

DHG20I1200HA

IXYS

DIODE GEN PURP 1.2KV 20A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.24V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247 (HA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-3P-3 Full Pack

재고5,008

1200V

20A

2.24V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

25µA @ 1200V

-

Through Hole

TO-3P-3 Full Pack

TO-247 (HA)

-55°C ~ 150°C

DPG60I400HA

IXYS

DIODE GEN PURP 400V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.47V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고7,664

400V

60A

1.47V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

1µA @ 400V

-

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

DPF60IM400HB

IXYS

DIODE GEN PURP 400V 60A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.27V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고4,624

400V

60A

1.27V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

1µA @ 400V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

DSA1-16D

IXYS

DIODE AVALANCHE 1.6KV 2.3A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 2.3A
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Radial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Radial

재고20,400

1600V

2.3A

1.34V @ 7A

Standard Recovery >500ns, > 200mA (Io)

-

700µA @ 1600V

-

Through Hole

Radial

-

-40°C ~ 150°C

DNA30E2200PA

IXYS

DIODE GEN PURP 2.2KV 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 2200V
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고3,840

2200V

30A

1.26V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 2200V

7pF @ 700V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

DHG20I600HA

IXYS

DIODE GEN PURP 600V 20A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.24V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247 (HA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-3P-3 Full Pack

재고7,104

600V

20A

2.24V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

25µA @ 600V

-

Through Hole

TO-3P-3 Full Pack

TO-247 (HA)

-55°C ~ 150°C

DSEP29-06AS-TUBE

IXYS

DIODE GEN PURP 600V 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.61V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,128

600V

30A

1.61V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

250µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263

-55°C ~ 175°C

DSA1-12D

IXYS

DIODE AVALANCHE 1.2KV 2.3A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2.3A
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 700µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Radial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Radial

재고5,760

1200V

2.3A

1.34V @ 7A

Standard Recovery >500ns, > 200mA (Io)

-

700µA @ 1200V

-

Through Hole

Radial

-

-40°C ~ 150°C

DPG60IM400QB

IXYS

DIODE GEN PURP 400V 60A TO3P

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.47V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-3P-3, SC-65-3

재고3,216

400V

60A

1.47V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

1µA @ 400V

-

Through Hole

TO-3P-3, SC-65-3

TO-3P

-55°C ~ 175°C

DHF30IM600PN

IXYS

DIODE GEN PURP 600V 15A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.37V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3 Full Pack, Isolated Tab

재고5,776

600V

15A

2.37V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

TO-220ABFP

-55°C ~ 150°C

DSI45-08A

IXYS

DIODE GEN PURP 800V 45A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-247-2

재고4,000

800V

45A

1.28V @ 45A

Standard Recovery >500ns, > 200mA (Io)

-

20µA @ 800V

-

Through Hole

TO-247-2

TO-247AD

-40°C ~ 175°C

DMA30E1800HA

IXYS

DIODE GEN PURP 1800V 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 1800V
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고5,568

1800V

30A

1.25V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 1800V

10pF @ 400V, 1MHz

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

DSEI36-06AS-TUBE

IXYS

DIODE GEN PURP 600V 37A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 37A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 37A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,616

600V

37A

1.6V @ 37A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

DPG30I400HA

IXYS

DIODE GEN PURP 400V 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고7,024

400V

30A

1.41V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

1µA @ 400V

32pF @ 200V, 1MHz

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

DPG30I300HA

IXYS

DIODE GEN PURP 300V 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고7,648

300V

30A

1.34V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1µA @ 300V

-

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

DHG20I1200PA

IXYS

DIODE GEN PURP 1.2KV 20A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 30µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고3,440

1200V

20A

2.7V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

30µA @ 1200V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

DSEP29-06B

IXYS

DIODE GEN PURP 600V 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.52V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고6,768

600V

30A

2.52V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

250µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

DHG30I600PA

IXYS

DIODE GEN PURP 600V 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.37V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고6,544

600V

30A

2.37V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

DNA30EM2200PC

IXYS

DIODE GEN PURP 2.2KV 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 2200V
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,664

2200V

30A

1.26V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 2200V

7pF @ 700V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-55°C ~ 175°C

DNA30E2200PC

IXYS

DIODE GEN PURP 2.2KV 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 2200V
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,248

2200V

30A

1.26V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 2200V

7pF @ 700V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-55°C ~ 175°C

DSI30-16AS-TUBE

IXYS

DIODE GEN PURP 1.6KV 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 1600V
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,800

1600V

30A

1.29V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 1600V

10pF @ 400V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 175°C

DHG20I600PA

IXYS

DIODE GEN PURP 600V 20A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.32V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고5,936

600V

20A

2.32V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

30µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

DHG10I1800PA

IXYS

DIODE GEN PURP 1.8KV 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.23V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 50µA @ 1800V
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고3,264

1800V

10A

2.23V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

50µA @ 1800V

3pF @ 900V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

DSI30-08AC

IXYS

DIODE GEN 800V 30A ISOPLUS220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 45A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?
Operating Temperature - Junction: -55°C ~ 150°C

패키지: ISOPLUS220?

재고5,152

800V

30A

1.45V @ 45A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Through Hole

ISOPLUS220?

-55°C ~ 150°C