IXYS 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FMM110-015X2F	IXYS	MOSFET 2N-CH 150V 53A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 53A Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Power - Max: 180W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고3,392	Standard	150V	53A	20 mOhm @ 55A, 10V	4.5V @ 250µA	150nC @ 10V	8600pF @ 25V	180W	-55°C ~ 175°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
FMP36-015P	IXYS	MOSFET N/P-CH 150V 36A/22A I4PAC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A, 22A Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고4,208	Standard	150V	36A, 22A	40 mOhm @ 31A, 10V	5.5V @ 250µA	70nC @ 10V	2250pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
FMM60-02TF	IXYS	MOSFET 2N-CH 200V 33A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 33A Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고5,040	Standard	200V	33A	40 mOhm @ 30A, 10V	4.5V @ 250µA	90nC @ 10V	3700pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
FMM50-025TF	IXYS	MOSFET 2N-CH 250V 30A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고4,960	Standard	250V	30A	50 mOhm @ 25A, 10V	4.5V @ 250µA	78nC @ 10V	4000pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
FMP76-010T	IXYS	MOSFET N/P-CH 100V 62A/54A I4PAC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 62A, 54A Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Power - Max: 89W, 132W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고3,520	Standard	100V	62A, 54A	11 mOhm @ 25A, 10V	4.5V @ 250µA	104nC @ 10V	5080pF @ 25V	89W, 132W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
IXTL2X180N10T	IXYS	MOSFET 2N-CH 100V 100A I5-PAK FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak? Supplier Device Package: ISOPLUSi5-Pak?	패키지: ISOPLUSi5-Pak?	재고6,160	Standard	100V	100A	7.4 mOhm @ 50A, 10V	4.5V @ 250µA	151nC @ 10V	6900pF @ 25V	150W	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
FMP26-02P	IXYS	MOSFET N/P-CH 200V 26A/17A I4PAC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 26A, 17A Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고4,320	Standard	200V	26A, 17A	60 mOhm @ 25A, 10V	5V @ 250µA	70nC @ 10V	2720pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
MTI200WX75GD-SMD	IXYS	MOSFET 6N-CH 75V 255A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 255A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL™ Supplier Device Package: ISOPLUS-DIL™	패키지: -	Request a Quote	-	75V	255A (Tc)	1.3mOhm @ 100A, 10V	3.8V @ 275µA	155nC @ 10V	14400pF @ 38V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL™	ISOPLUS-DIL™
IXFN27N120SK	IXYS	SIC 2N-CH 1200V SOT227B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
FMP76-01T	IXYS	MOSFET N/P-CH 100V 54A I4-PAC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V Power - Max: 89W, 132W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-PAK™ Supplier Device Package: ISOPLUS i4-PAC™	패키지: -	Request a Quote	-	100V	54A (Tc), 62A (Tc)	24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V	4V @ 250µA, 4.5V @ 250µA	197nC @ 10V, 104nC @ 10V	1370pF @ 25V, 5080pF @ 25V	89W, 132W	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-PAK™	ISOPLUS i4-PAC™
MTI145WX100GD-SMD	IXYS	MOSFET 6N-CH 100V 190A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL™ Supplier Device Package: ISOPLUS-DIL™	패키지: -	Request a Quote	-	100V	190A (Tc)	2.2mOhm @ 100A, 10V	3.5V @ 275µA	155nC @ 10V	11100pF @ 50V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL™	ISOPLUS-DIL™
MCB20P1200LB-TRR	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
MCB20P1200LB-TUB	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
MCB60P1200TLB-TUB	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
MCB60P1200TLB-TRR	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
MKE38P600TLB	IXYS	MOSFET 600V 50A ISOPLUS-SMPD FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD™.B	패키지: -	Request a Quote	-	600V	50A (Tc)	-	-	-	-	-	-	Surface Mount	9-SMD Module	ISOPLUS-SMPD™.B
MTC120WX55GD-SMD	IXYS	MOSFET 6N-CH 55V 150A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	55V	150A (Tc)	3.1mOhm @ 100A, 10V	4V @ 1mA	100nC @ 10V	6970pF @ 25V	-	-55°C ~ 175°C (TJ)	-	-	-
MCB30P1200LB-TUB	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
MCB30P1200LB-TRR	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
MTC120WX75GD-SMD	IXYS	MOSFET 6N-CH 75V 180A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL™ Supplier Device Package: ISOPLUS-DIL™	패키지: -	Request a Quote	-	75V	180A (Tc)	3.1mOhm @ 100A, 10V	4V @ 1mA	178nC @ 10V	10500pF @ 25V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL™	ISOPLUS-DIL™
MCB40P1200LB-TRR	IXYS	SIC 2N-CH 1200V 58A 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 58A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote	-	1200V (1.2kV)	58A	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
MCB40P1200LB-TUB	IXYS	SIC 2N-CH 1200V 58A SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 58A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-SMD Power Module Supplier Device Package: SMPD	패키지: -	Request a Quote	-	1200V (1.2kV)	58A	-	-	-	-	-	-	Surface Mount	9-SMD Power Module	SMPD
MTI85W100GC-SMD	IXYS	MOSFET 6N-CH 100V 120A ISOPLUS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL™	패키지: -	Request a Quote	-	100V	120A (Tc)	4mOhm @ 80A, 10V	3.5V @ 150µA	88nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL™
MTC120W55GC-SMD	IXYS	MOSFET 6N-CH 55V 150A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	55V	150A (Tc)	3.1mOhm @ 100A, 10V	4V @ 1mA	100nC @ 10V	6970pF @ 25V	-	-55°C ~ 175°C (TJ)	-	-	-
MMPA60P1000TLA	IXYS	MOSFET 2N-CH 1000V Y3-LI FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	패키지: -	Request a Quote	-	1000V (1kV)	-	-	-	-	-	-	-	Chassis Mount	Y3-Li	Y3-Li
IXFN130N90SK	IXYS	SIC 2N-CH 900V SOT227B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: -	Request a Quote	-	900V	-	-	-	-	-	-	-	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
MMIX2F60N50P3	IXYS	MOSFET 2N-CH 500V 30A 24SMPD FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V Power - Max: 320W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD Module, 9 Leads Supplier Device Package: 24-SMPD	패키지: -	Request a Quote	-	500V	30A (Tc)	110mOhm @ 30A, 10V	5V @ 4mA	96nC @ 10V	6250pF @ 25V	320W	-55°C ~ 150°C (TJ)	Surface Mount	24-SMD Module, 9 Leads	24-SMPD
MKE38P600TLB-TRR	IXYS	MOSFET ISOPLUS-SMPD FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-SMD Module Supplier Device Package: ISOPLUS-SMPD™.B	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	9-SMD Module	ISOPLUS-SMPD™.B

FMM110-015X2F

IXYS

MOSFET 2N-CH 150V 53A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Power - Max: 180W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고3,392

Standard

150V

53A

20 mOhm @ 55A, 10V

4.5V @ 250µA

150nC @ 10V

8600pF @ 25V

180W

-55°C ~ 175°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

FMP36-015P

IXYS

MOSFET N/P-CH 150V 36A/22A I4PAC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36A, 22A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고4,208

Standard

150V

36A, 22A

40 mOhm @ 31A, 10V

5.5V @ 250µA

70nC @ 10V

2250pF @ 25V

125W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

FMM60-02TF

IXYS

MOSFET 2N-CH 200V 33A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고5,040

Standard

200V

33A

40 mOhm @ 30A, 10V

4.5V @ 250µA

90nC @ 10V

3700pF @ 25V

125W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

FMM50-025TF

IXYS

MOSFET 2N-CH 250V 30A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고4,960

Standard

250V

30A

50 mOhm @ 25A, 10V

4.5V @ 250µA

78nC @ 10V

4000pF @ 25V

125W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

FMP76-010T

IXYS

MOSFET N/P-CH 100V 62A/54A I4PAC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 62A, 54A
Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
Power - Max: 89W, 132W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고3,520

Standard

100V

62A, 54A

11 mOhm @ 25A, 10V

4.5V @ 250µA

104nC @ 10V

5080pF @ 25V

89W, 132W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

IXTL2X180N10T

IXYS

MOSFET 2N-CH 100V 100A I5-PAK

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Power - Max: 150W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak?
Supplier Device Package: ISOPLUSi5-Pak?

패키지: ISOPLUSi5-Pak?

재고6,160

Standard

100V

100A

7.4 mOhm @ 50A, 10V

4.5V @ 250µA

151nC @ 10V

6900pF @ 25V

150W

-55°C ~ 175°C (TJ)

Through Hole

ISOPLUSi5-Pak?

FMP26-02P

IXYS

MOSFET N/P-CH 200V 26A/17A I4PAC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 26A, 17A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고4,320

Standard

200V

26A, 17A

60 mOhm @ 25A, 10V

5V @ 250µA

70nC @ 10V

2720pF @ 25V

125W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

MTI200WX75GD-SMD

IXYS

MOSFET 6N-CH 75V 255A ISOPLUS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Supplier Device Package: ISOPLUS-DIL™

패키지: -

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-

75V

255A (Tc)

1.3mOhm @ 100A, 10V

3.8V @ 275µA

155nC @ 10V

14400pF @ 38V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL™

IXFN27N120SK

IXYS

SIC 2N-CH 1200V SOT227B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: -

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-

1200V (1.2kV)

-

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

FMP76-01T

IXYS

MOSFET N/P-CH 100V 54A I4-PAC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V
Power - Max: 89W, 132W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-PAK™
Supplier Device Package: ISOPLUS i4-PAC™

패키지: -

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-

100V

54A (Tc), 62A (Tc)

24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V

4V @ 250µA, 4.5V @ 250µA

197nC @ 10V, 104nC @ 10V

1370pF @ 25V, 5080pF @ 25V

89W, 132W

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUSi5-PAK™

ISOPLUS i4-PAC™

MTI145WX100GD-SMD

IXYS

MOSFET 6N-CH 100V 190A ISOPLUS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Supplier Device Package: ISOPLUS-DIL™

패키지: -

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-

100V

190A (Tc)

2.2mOhm @ 100A, 10V

3.5V @ 275µA

155nC @ 10V

11100pF @ 50V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL™

MCB20P1200LB-TRR

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

MCB20P1200LB-TUB

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

MCB60P1200TLB-TUB

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

Request a Quote

-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

MCB60P1200TLB-TRR

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

MKE38P600TLB

IXYS

MOSFET 600V 50A ISOPLUS-SMPD

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD™.B

패키지: -

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-

600V

50A (Tc)

-

Surface Mount

9-SMD Module

ISOPLUS-SMPD™.B

MTC120WX55GD-SMD

IXYS

MOSFET 6N-CH 55V 150A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

55V

150A (Tc)

3.1mOhm @ 100A, 10V

4V @ 1mA

100nC @ 10V

6970pF @ 25V

-

-55°C ~ 175°C (TJ)

-

MCB30P1200LB-TUB

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

MCB30P1200LB-TRR

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

MTC120WX75GD-SMD

IXYS

MOSFET 6N-CH 75V 180A ISOPLUS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Supplier Device Package: ISOPLUS-DIL™

패키지: -

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-

75V

180A (Tc)

3.1mOhm @ 100A, 10V

4V @ 1mA

178nC @ 10V

10500pF @ 25V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL™

MCB40P1200LB-TRR

IXYS

SIC 2N-CH 1200V 58A 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

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-

1200V (1.2kV)

58A

-

Surface Mount

9-PowerSMD

9-SMPD-B

MCB40P1200LB-TUB

IXYS

SIC 2N-CH 1200V 58A SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-SMD Power Module
Supplier Device Package: SMPD

패키지: -

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-

1200V (1.2kV)

58A

-

Surface Mount

9-SMD Power Module

SMPD

MTI85W100GC-SMD

IXYS

MOSFET 6N-CH 100V 120A ISOPLUS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL™

패키지: -

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-

100V

120A (Tc)

4mOhm @ 80A, 10V

3.5V @ 150µA

88nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL™

MTC120W55GC-SMD

IXYS

MOSFET 6N-CH 55V 150A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

55V

150A (Tc)

3.1mOhm @ 100A, 10V

4V @ 1mA

100nC @ 10V

6970pF @ 25V

-

-55°C ~ 175°C (TJ)

-

MMPA60P1000TLA

IXYS

MOSFET 2N-CH 1000V Y3-LI

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li

패키지: -

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-

1000V (1kV)

-

Chassis Mount

Y3-Li

IXFN130N90SK

IXYS

SIC 2N-CH 900V SOT227B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: -

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-

900V

-

Chassis Mount

SOT-227-4, miniBLOC

SOT-227B

MMIX2F60N50P3

IXYS

MOSFET 2N-CH 500V 30A 24SMPD

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Power - Max: 320W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD Module, 9 Leads
Supplier Device Package: 24-SMPD

패키지: -

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-

500V

30A (Tc)

110mOhm @ 30A, 10V

5V @ 4mA

96nC @ 10V

6250pF @ 25V

320W

-55°C ~ 150°C (TJ)

Surface Mount

24-SMD Module, 9 Leads

24-SMPD

MKE38P600TLB-TRR

IXYS

MOSFET ISOPLUS-SMPD

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD™.B

패키지: -

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-

Surface Mount

9-SMD Module

ISOPLUS-SMPD™.B