IXYS 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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IXYS 제품 - 트랜지스터 - IGBT - 단일

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제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXXH30N60C3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 110 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
  • Power - Max: 270 W
  • Switching Energy: 500µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 23ns/77ns
  • Test Condition: 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: -
Request a Quote
600 V
60 A
110 A
2.4V @ 15V, 24A
270 W
500µJ (on), 270µJ (off)
Standard
37 nC
23ns/77ns
400V, 24A, 10Ohm, 15V
33 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXXQ30N60B3M
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 33 A
  • Current - Collector Pulsed (Icm): 140 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
  • Power - Max: 90 W
  • Switching Energy: 550µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 39 nC
  • Td (on/off) @ 25°C: 23ns/150ns
  • Test Condition: 400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 36 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: -
재고900
600 V
33 A
140 A
1.85V @ 15V, 24A
90 W
550µJ (on), 800µJ (off)
Standard
39 nC
23ns/150ns
400V, 24A, 10Ohm, 15V
36 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXA20I1200HB
IXYS

IGBT 1200V 38A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYQ30N65B3D1
IXYS

IGBT PT 650V 70A TO3P

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 270 W
  • Switching Energy: 830µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 45 nC
  • Td (on/off) @ 25°C: 17ns/87ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 38 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: -
Request a Quote
650 V
70 A
160 A
2.1V @ 15V, 30A
270 W
830µJ (on), 640µJ (off)
Standard
45 nC
17ns/87ns
400V, 30A, 10Ohm, 15V
38 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXYH75N120B4
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 240 A
  • Current - Collector Pulsed (Icm): 440 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
  • Power - Max: 1150 W
  • Switching Energy: 4.5mJ (on), 2.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 157 nC
  • Td (on/off) @ 25°C: 22ns/182ns
  • Test Condition: 600V, 50A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 66 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: -
Request a Quote
1200 V
240 A
440 A
2.2V @ 15V, 75A
1150 W
4.5mJ (on), 2.7mJ (off)
Standard
157 nC
22ns/182ns
600V, 50A, 3Ohm, 15V
66 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXYK100N65B3D1
IXYS

IGBT 650V 225A TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 225 A
  • Current - Collector Pulsed (Icm): 460 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
  • Power - Max: 830 W
  • Switching Energy: 1.27mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 168 nC
  • Td (on/off) @ 25°C: 29ns/150ns
  • Test Condition: 400V, 50A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 37 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: -
Request a Quote
650 V
225 A
460 A
1.85V @ 15V, 70A
830 W
1.27mJ (on), 2mJ (off)
Standard
168 nC
29ns/150ns
400V, 50A, 3Ohm, 15V
37 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IXXH75N60B3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 160 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
  • Power - Max: 750 W
  • Switching Energy: 1.7mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 107 nC
  • Td (on/off) @ 25°C: 35ns/118ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 75 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXXH)
패키지: -
Request a Quote
600 V
160 A
300 A
1.85V @ 15V, 60A
750 W
1.7mJ (on), 1.5mJ (off)
Standard
107 nC
35ns/118ns
400V, 60A, 5Ohm, 15V
75 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXXH)
IXYP60N65A5
IXYS

IGBT PT 650V 134A TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 134 A
  • Current - Collector Pulsed (Icm): 260 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
  • Power - Max: 395 W
  • Switching Energy: 600µJ (on), 1.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 128 nC
  • Td (on/off) @ 25°C: 28ns/230ns
  • Test Condition: 400V, 36A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
패키지: -
재고921
650 V
134 A
260 A
1.35V @ 15V, 36A
395 W
600µJ (on), 1.45mJ (off)
Standard
128 nC
28ns/230ns
400V, 36A, 5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
IXYR100N65A3V1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYH85N120C4
IXYS

IGBT 1200V 240A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 240 A
  • Current - Collector Pulsed (Icm): 420 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
  • Power - Max: 1150 W
  • Switching Energy: 4.3mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 192 nC
  • Td (on/off) @ 25°C: 35ns/280ns
  • Test Condition: 600V, 50A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
재고51
1200 V
240 A
420 A
2.5V @ 15V, 85A
1150 W
4.3mJ (on), 2mJ (off)
Standard
192 nC
35ns/280ns
600V, 50A, 5Ohm, 15V
60 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXYH85N120A4
IXYS

IGBT GENX4 1200V 85A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 300 A
  • Current - Collector Pulsed (Icm): 520 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
  • Power - Max: 1150 W
  • Switching Energy: 4.9mJ (on), 8.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 40ns/400ns
  • Test Condition: 600V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
Request a Quote
1200 V
300 A
520 A
1.8V @ 15V, 85A
1150 W
4.9mJ (on), 8.3mJ (off)
Standard
200 nC
40ns/400ns
600V, 60A, 5Ohm, 15V
40 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXXX200N60B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 380 A
  • Current - Collector Pulsed (Icm): 900 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
  • Power - Max: 1630 W
  • Switching Energy: 2.85mJ (on), 4.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 315 nC
  • Td (on/off) @ 25°C: 48ns/160ns
  • Test Condition: 360V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
재고75
600 V
380 A
900 A
1.7V @ 15V, 100A
1630 W
2.85mJ (on), 4.4mJ (off)
Standard
315 nC
48ns/160ns
360V, 100A, 1Ohm, 15V
100 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
IXBT2N250-TR
IXYS

IGBT 2500V 5A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 5 A
  • Current - Collector Pulsed (Icm): 13 A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
  • Power - Max: 32 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 10.6 nC
  • Td (on/off) @ 25°C: 30ns/70ns
  • Test Condition: 2000V, 2A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 920 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: -
Request a Quote
2500 V
5 A
13 A
3.5V @ 15V, 2A
32 W
-
Standard
10.6 nC
30ns/70ns
2000V, 2A, 47Ohm, 15V
920 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
IXDR35N120D1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGT72N60A3-TRL
IXYS

IGBT PT 600V 75A TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
  • Power - Max: 540 W
  • Switching Energy: 1.38mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 230 nC
  • Td (on/off) @ 25°C: 31ns/320ns
  • Test Condition: 480V, 50A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: -
Request a Quote
600 V
75 A
400 A
1.35V @ 15V, 60A
540 W
1.38mJ (on), 3.5mJ (off)
Standard
230 nC
31ns/320ns
480V, 50A, 3Ohm, 15V
34 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
IXGA20N250HV
IXYS

DISC IGBT NPT-VERY HI VOLTAGE TO

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 53 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
Request a Quote
2500 V
30 A
105 A
3.1V @ 15V, 20A
150 W
-
Standard
53 nC
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IXGR72N60C3
IXYS

DISC IGBT PT-HIFREQUENCY ISOPLUS

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 200 W
  • Switching Energy: 1.03mJ (on), 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 175 nC
  • Td (on/off) @ 25°C: 27ns/77ns
  • Test Condition: 480V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 37 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISOPLUS247™
패키지: -
Request a Quote
600 V
80 A
400 A
2.7V @ 15V, 50A
200 W
1.03mJ (on), 480µJ (off)
Standard
175 nC
27ns/77ns
480V, 50A, 2Ohm, 15V
37 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
ISOPLUS247™
IXGM40N60
IXYS

IGBT 600V 75A 250W TO-204AE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 100ns/600ns
  • Test Condition: 480V, 40A, 22Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-204AE
패키지: -
Request a Quote
600 V
75 A
150 A
2.5V @ 15V, 40A
250 W
-
Standard
250 nC
100ns/600ns
480V, 40A, 22Ohm, 15V
200 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXA30RG1200DHG-TUB
IXYS

IGBT PHASELEG 1200V 30A SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 43 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 147 W
  • Switching Energy: 2.5mJ (on), 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 76 nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 25A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
패키지: -
Request a Quote
1200 V
43 A
-
2.1V @ 15V, 25A
147 W
2.5mJ (on), 3mJ (off)
Standard
76 nC
70ns/250ns
600V, 25A, 39Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
9-SMD Module
ISOPLUS-SMPD™.B
IXA30RG1200DHG-TRR
IXYS

IGBT PHASELEG 1200V 43A SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 43 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 147 W
  • Switching Energy: 2.5mJ (on), 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 76 nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 25A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
패키지: -
Request a Quote
1200 V
43 A
-
2.1V @ 15V, 25A
147 W
2.5mJ (on), 3mJ (off)
Standard
76 nC
70ns/250ns
600V, 25A, 39Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
9-SMD Module
ISOPLUS-SMPD™.B
IXYH100N65A3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 240 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
  • Power - Max: 470 W
  • Switching Energy: 3.15mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 178 nC
  • Td (on/off) @ 25°C: 24ns/174ns
  • Test Condition: 400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 64 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
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650 V
240 A
480 A
1.8V @ 15V, 70A
470 W
3.15mJ (on), 2.2mJ (off)
Standard
178 nC
24ns/174ns
400V, 50A, 2Ohm, 15V
64 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXYH55N120B4H1
IXYS

IGBT TRENCH 1200V 138A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 138 A
  • Current - Collector Pulsed (Icm): 310 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
  • Power - Max: 650 W
  • Switching Energy: 3.4mJ (on), 2.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 27ns/215ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 420 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
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1200 V
138 A
310 A
2.1V @ 15V, 55A
650 W
3.4mJ (on), 2.75mJ (off)
Standard
120 nC
27ns/215ns
600V, 40A, 5Ohm, 15V
420 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXBK64N250
IXYS

BIMOSFET 2500V 75A MONO TO-264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
  • Power - Max: 735 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA
패키지: -
재고6
2500 V
75 A
-
3V @ 15V, 64A
735 W
-
Standard
-
-
-
-
-
Through Hole
TO-264-3, TO-264AA
TO-264AA
IXYH75N65C3D1
IXYS

IGBT PT 650V 175A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 175 A
  • Current - Collector Pulsed (Icm): 360 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 750 W
  • Switching Energy: 2mJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 122 nC
  • Td (on/off) @ 25°C: 26ns/93ns
  • Test Condition: 400V, 60A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: -
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650 V
175 A
360 A
2.3V @ 15V, 60A
750 W
2mJ (on), 950µJ (off)
Standard
122 nC
26ns/93ns
400V, 60A, 3Ohm, 15V
65 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXYH40N120B4H1
IXYS

IGBT TRENCH 1200V 112A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 112 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
  • Power - Max: 600 W
  • Switching Energy: 5.9mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 19ns/220ns
  • Test Condition: 960V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 430 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
재고840
1200 V
112 A
240 A
2.1V @ 15V, 32A
600 W
5.9mJ (on), 2.9mJ (off)
Standard
94 nC
19ns/220ns
960V, 32A, 5Ohm, 15V
430 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXXA50N60B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
  • Power - Max: 600 W
  • Switching Energy: 670µJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 27ns/150ns
  • Test Condition: 360V, 36A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
패키지: -
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600 V
120 A
200 A
1.8V @ 15V, 36A
600 W
670µJ (on), 1.2mJ (off)
Standard
70 nC
27ns/150ns
360V, 36A, 5Ohm, 15V
40 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
IXYH55N120C4H1
IXYS

IGBT TRENCH 1200V 126A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 126 A
  • Current - Collector Pulsed (Icm): 290 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
  • Power - Max: 650 W
  • Switching Energy: 3.5mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: 114 nC
  • Td (on/off) @ 25°C: 20ns/180ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 180 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
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1200 V
126 A
290 A
2.5V @ 15V, 55A
650 W
3.5mJ (on), 1.34mJ (off)
Standard
114 nC
20ns/180ns
600V, 40A, 5Ohm, 15V
180 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXYY8N90C3-TRL
IXYS

IXYY8N90C3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 48 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
  • Power - Max: 125 W
  • Switching Energy: 460µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.3 nC
  • Td (on/off) @ 25°C: 16ns/40ns
  • Test Condition: 450V, 8A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 20 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: -
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900 V
20 A
48 A
3V @ 15V, 8A
125 W
460µJ (on), 180µJ (off)
Standard
13.3 nC
16ns/40ns
450V, 8A, 30Ohm, 15V
20 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA