페이지 6 - IXYS 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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IXYS 제품 - 트랜지스터 - IGBT - 단일

기록 1,002
페이지  6/36
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제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IXYX25N250CV1
IXYS

IGBT 2500V 235A PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 235 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 937 W
  • Switching Energy: 8.3mJ (on), 7.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147 nC
  • Td (on/off) @ 25°C: 15ns/230ns
  • Test Condition: 1250V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 220 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
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2500 V
95 A
235 A
4V @ 15V, 25A
937 W
8.3mJ (on), 7.3mJ (off)
Standard
147 nC
15ns/230ns
1250V, 25A, 5Ohm, 15V
220 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
IXG65I3300KN
IXYS

IGBT PT 3300V 85A ISOPLUS264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264™
  • Supplier Device Package: ISOPLUS264™
패키지: -
Request a Quote
3300 V
85 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS264™
ISOPLUS264™
IXGM20N60A
IXYS

IGBT 600V 40A TO-204AE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 150 W
  • Switching Energy: 2mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 100ns/600ns
  • Test Condition: 480V, 20A, 82Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-204AE
패키지: -
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600 V
40 A
80 A
3V @ 15V, 20A
150 W
2mJ (on), 2mJ (off)
Standard
120 nC
100ns/600ns
480V, 20A, 82Ohm, 15V
200 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXYH90N65A5
IXYS

IGBT PT 650V 220A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 220 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
  • Power - Max: 650 W
  • Switching Energy: 1.3mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 260 nC
  • Td (on/off) @ 25°C: 40ns/420ns
  • Test Condition: 400V, 50A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
재고285
650 V
220 A
600 A
1.35V @ 15V, 60A
650 W
1.3mJ (on), 3.4mJ (off)
Standard
260 nC
40ns/420ns
400V, 50A, 5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXA4IF1200UC-TUB
IXYS

DISC IGBT XPT-GENX3 TO-252D

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 45 W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 12 nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 3A, 330Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: -
Request a Quote
1200 V
9 A
-
2.1V @ 15V, 3A
45 W
400µJ (on), 300µJ (off)
Standard
12 nC
70ns/250ns
600V, 3A, 330Ohm, 15V
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
IXA4IF1200UC-TRL
IXYS

IGBT 1200V 9A 45W TO252AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 45 W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 12 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 3A, 330Ohm, 15V
  • Reverse Recovery Time (trr): 350 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: -
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1200 V
9 A
-
2.1V @ 15V, 3A
45 W
400µJ (on), 300µJ (off)
Standard
12 nC
-
600V, 3A, 330Ohm, 15V
350 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
IXGT6N170-TRL
IXYS

IGBT 1700V 12A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 20 nC
  • Td (on/off) @ 25°C: 40ns/250ns
  • Test Condition: 1360V, 6A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 36 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: -
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1700 V
12 A
24 A
4V @ 15V, 6A
75 W
-
Standard
20 nC
40ns/250ns
1360V, 6A, 33Ohm, 15V
36 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
IXBH32N300HV
IXYS

DISC IGBT BIMSFT-VERYHIVOLT TO-2

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 280 A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
  • Power - Max: 400 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 142 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
패키지: -
Request a Quote
3000 V
80 A
280 A
3.2V @ 15V, 32A
400 W
-
Standard
142 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
TO-247HV
IXBT14N300HV
IXYS

IGBT 3000V 38A TO268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 960V, 14A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 1.4 µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXBT)
패키지: -
Request a Quote
3000 V
38 A
120 A
2.7V @ 15V, 14A
200 W
-
Standard
62 nC
-
960V, 14A, 20Ohm, 15V
1.4 µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXBT)
IXGA12N120A3-TRL
IXYS

IXGA12N120A3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 22 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 100 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 20.4 nC
  • Td (on/off) @ 25°C: 35ns/62ns
  • Test Condition: 960V, 12A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
1200 V
22 A
60 A
3V @ 15V, 12A
100 W
-
Standard
20.4 nC
35ns/62ns
960V, 12A, 10Ohm, 15V
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
MMIX1X340N65B4
IXYS

IGBT 650V 450A 24-SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 450 A
  • Current - Collector Pulsed (Icm): 1200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
  • Power - Max: 1200 W
  • Switching Energy: 4.4mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 553 nC
  • Td (on/off) @ 25°C: 62ns/245ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 76 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
패키지: -
Request a Quote
650 V
450 A
1200 A
1.7V @ 15V, 160A
1200 W
4.4mJ (on), 3.5mJ (off)
Standard
553 nC
62ns/245ns
400V, 100A, 1Ohm, 15V
76 ns
-55°C ~ 175°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
IXGP48N60A3
IXYS

IGBT PT 600V 120A TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
  • Power - Max: 300 W
  • Switching Energy: 950µJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 25ns/334ns
  • Test Condition: 480V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
재고39
600 V
120 A
300 A
1.35V @ 15V, 32A
300 W
950µJ (on), 2.9mJ (off)
Standard
110 nC
25ns/334ns
480V, 32A, 5Ohm, 15V
30 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
IXGP48N60B3
IXYS

DISC IGBT PT-MID FREQUENCY TO-22

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 280 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 300 W
  • Switching Energy: 840µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 115 nC
  • Td (on/off) @ 25°C: 22ns/130ns
  • Test Condition: 480V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
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600 V
48 A
280 A
1.8V @ 15V, 32A
300 W
840µJ (on), 660µJ (off)
Standard
115 nC
22ns/130ns
480V, 30A, 5Ohm, 15V
25 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
IXBH42N250
IXYS

BIMOSFET TRANS 2500V 42A TO-247A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 104 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
  • Power - Max: 500 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 72ns/445ns
  • Test Condition: 1250V, 42A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 1.7 µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: -
Request a Quote
2500 V
104 A
400 A
3V @ 15V, 42A
500 W
-
Standard
200 nC
72ns/445ns
1250V, 42A, 20Ohm, 15V
1.7 µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXGA30N60C3
IXYS

IGBT 600V 60A 220W TO-263AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 220 W
  • Switching Energy: 270µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 38 nC
  • Td (on/off) @ 25°C: 16ns/42ns
  • Test Condition: 300V, 20A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 26 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
600 V
60 A
150 A
3V @ 15V, 20A
220 W
270µJ (on), 90µJ (off)
Standard
38 nC
16ns/42ns
300V, 20A, 5Ohm, 15V
26 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXYH30N65B3D1
IXYS

IGBT PT 650V 70A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 270 W
  • Switching Energy: 830µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 45 nC
  • Td (on/off) @ 25°C: 17ns/87ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 38 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: -
Request a Quote
650 V
70 A
160 A
2.1V @ 15V, 30A
270 W
830µJ (on), 640µJ (off)
Standard
45 nC
17ns/87ns
400V, 30A, 10Ohm, 15V
38 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
IXXH40N65C4D1
IXYS

IGBT PT 650V 110A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 110 A
  • Current - Collector Pulsed (Icm): 215 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 455 W
  • Switching Energy: 1.6mJ (on), 420µJ (off)
  • Input Type: Standard
  • Gate Charge: 68 nC
  • Td (on/off) @ 25°C: 20ns/100ns
  • Test Condition: 400V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 62 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
Request a Quote
650 V
110 A
215 A
2.3V @ 15V, 40A
455 W
1.6mJ (on), 420µJ (off)
Standard
68 nC
20ns/100ns
400V, 40A, 5Ohm, 15V
62 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXXP12N65B4D1
IXYS

IGBT 650V 38A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 70 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
  • Power - Max: 160 W
  • Switching Energy: 440µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 34 nC
  • Td (on/off) @ 25°C: 13ns/158ns
  • Test Condition: 400V, 12A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 43 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: -
Request a Quote
650 V
38 A
70 A
1.95V @ 15V, 12A
160 W
440µJ (on), 220µJ (off)
Standard
34 nC
13ns/158ns
400V, 12A, 20Ohm, 15V
43 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXYX200N65B3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 410 A
  • Current - Collector Pulsed (Icm): 1100 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
  • Power - Max: 1560 W
  • Switching Energy: 5mJ (on), 4mJ (off)
  • Input Type: Standard
  • Gate Charge: 340 nC
  • Td (on/off) @ 25°C: 60ns/370ns
  • Test Condition: 400V, 100A, 0Ohm, 15V
  • Reverse Recovery Time (trr): 108 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
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650 V
410 A
1100 A
1.7V @ 15V, 100A
1560 W
5mJ (on), 4mJ (off)
Standard
340 nC
60ns/370ns
400V, 100A, 0Ohm, 15V
108 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
IXBH42N300HV
IXYS

DISC IGBT BIMSFT-VERYHIVOLT TO-2

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000 V
  • Current - Collector (Ic) (Max): 104 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
  • Power - Max: 500 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.7 µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
패키지: -
Request a Quote
3000 V
104 A
400 A
3V @ 15V, 42A
500 W
-
Standard
200 nC
-
-
1.7 µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
TO-247HV
IXXH40N65B4D1
IXYS

IGBT 650V 115A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 115 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 455 W
  • Switching Energy: 1.4mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 66 nC
  • Td (on/off) @ 25°C: 20ns/115ns
  • Test Condition: 400V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
Request a Quote
650 V
115 A
225 A
2V @ 15V, 40A
455 W
1.4mJ (on), 800µJ (off)
Standard
66 nC
20ns/115ns
400V, 40A, 5Ohm, 15V
60 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
IXYX300N65A3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 600 A
  • Current - Collector Pulsed (Icm): 1460 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
  • Power - Max: 2300 W
  • Switching Energy: 7.8mJ (on), 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 565 nC
  • Td (on/off) @ 25°C: 42ns/190ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 125 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
Request a Quote
650 V
600 A
1460 A
1.6V @ 15V, 100A
2300 W
7.8mJ (on), 4.7mJ (off)
Standard
565 nC
42ns/190ns
400V, 100A, 1Ohm, 15V
125 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
ITF38IF1200HJ
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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IXGP28N60A3M
IXYS

DISC IGBT PT-LOW FREQUENCY TO-22

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
  • Power - Max: 64 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 66 nC
  • Td (on/off) @ 25°C: 18ns/300ns
  • Test Condition: 480V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 26 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220 Isolated Tab
패키지: -
Request a Quote
600 V
38 A
200 A
1.4V @ 15V, 24A
64 W
-
Standard
66 nC
18ns/300ns
480V, 24A, 10Ohm, 15V
26 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
IXYH8N250CHV
IXYS

IGBT 2500V 29A TO247HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 29 A
  • Current - Collector Pulsed (Icm): 70 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
  • Power - Max: 280 W
  • Switching Energy: 2.6mJ (on), 1.07mJ (off)
  • Input Type: Standard
  • Gate Charge: 45 nC
  • Td (on/off) @ 25°C: 11ns/180ns
  • Test Condition: 1250V, 8A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 5 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
패키지: -
재고9
2500 V
29 A
70 A
4V @ 15V, 8A
280 W
2.6mJ (on), 1.07mJ (off)
Standard
45 nC
11ns/180ns
1250V, 8A, 15Ohm, 15V
5 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247HV
IXYP30N65C3
IXYS

DISC IGBT XPT-GENX3 TO-220AB/FP

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 118 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 270 W
  • Switching Energy: 1mJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 21ns/75ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
Request a Quote
650 V
60 A
118 A
2.7V @ 15V, 30A
270 W
1mJ (on), 270µJ (off)
Standard
44 nC
21ns/75ns
400V, 30A, 10Ohm, 15V
42 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IXYA8N250CHV
IXYS

IGBT 2500V 29A TO263HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 29 A
  • Current - Collector Pulsed (Icm): 70 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
  • Power - Max: 280 W
  • Switching Energy: 2.6mJ (on), 1.07mJ (off)
  • Input Type: Standard
  • Gate Charge: 45 nC
  • Td (on/off) @ 25°C: 11ns/180ns
  • Test Condition: 1250V, 8A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 5 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
재고108
2500 V
29 A
70 A
4V @ 15V, 8A
280 W
2.6mJ (on), 1.07mJ (off)
Standard
45 nC
11ns/180ns
1250V, 8A, 15Ohm, 15V
5 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IXXT100N75B4HV
IXYS

IGBT DISCRETE TO-268HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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