페이지 110 - IXYS 제품 | Heisener Electronics
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IXYS 제품

기록 5,468
페이지  110/196
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IXGH15N120B2D1
IXYS

IGBT 1200V 30A 192W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 15A
  • Power - Max: 192W
  • Switching Energy: 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 86nC
  • Td (on/off) @ 25°C: 25ns/165ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 165ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고3,568
IXGA150N30TC
IXYS

IGBT 300V 150A TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,952
IXSK40N60CD1
IXYS

IGBT 600V 75A 280W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 280W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 50ns/70ns
  • Test Condition: 480V, 40A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
패키지: TO-264-3, TO-264AA
재고6,720
IXGH24N170
IXYS

IGBT 1700V 50A 250W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 8mJ (off)
  • Input Type: Standard
  • Gate Charge: 106nC
  • Td (on/off) @ 25°C: 42ns/200ns
  • Test Condition: 1360V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고6,496
IXGT45N120
IXYS

IGBT 1200V 75A 300W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
  • Power - Max: 300W
  • Switching Energy: 14mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 55ns/370ns
  • Test Condition: 960V, 45A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,312
hot IXFK44N50F
IXYS

MOSFET N-CH 500V 44A TO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXFK)
  • Package / Case: TO-264-3, TO-264AA
패키지: TO-264-3, TO-264AA
재고6,272
IXTC102N25T
IXYS

MOSFET N-CH 250V ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
패키지: ISOPLUS220?
재고2,384
FDM15-06KC5
IXYS

MOSFET N-CH 600V 15A I4-PAC-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS i4-PAC?
  • Package / Case: i4-Pac?-5
패키지: i4-Pac?-5
재고3,200
IXTH340N04T4
IXYS

MOSFET N-CH 40V 340A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 256nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고2,496
IXTP6N100D2
IXYS

MOSFET N-CH 1000V 6A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,104
DSSS35-01AR
IXYS

DIODE ARRAY SCHOTTKY 100V

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고2,192
HTZ110A16K
IXYS

DIODE MODULE 16KV 3.5A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 16000V
  • Current - Average Rectified (Io) (per Diode): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 18.3V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 16800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고7,648
MDD175-28N1
IXYS

DIODE MODULE 2.8KV 240A Y1-CU

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800V
  • Current - Average Rectified (Io) (per Diode): 240A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 2800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y1-CU
  • Supplier Device Package: Y1-CU
패키지: Y1-CU
재고4,576
DSA90C200HR
IXYS

DIODE ARRAY SCHOTTKY 200V ISO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 45A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 45A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
패키지: TO-247-3
재고3,248
DSP25-16AT
IXYS

DIODE ARRAY GP 1600V 28A TO268AA

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 28A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 1600V
  • Operating Temperature - Junction: -40°C ~ 180°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고4,512
DSSK16-01AS-TUBE
IXYS

DIODE ARRAY SCHOTTKY 100V TO263

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 8A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 100V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,888
VUO122-12NO7
IXYS

RECT BRIDGE 3PH 1200V ECO-PAC2

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 117A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC2
  • Supplier Device Package: ECO-PAC2
패키지: ECO-PAC2
재고2,288
DMA90U1800LB-TRR
IXYS

DIODE RECTIFER TRIPLE 1800V SMPD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
  • Current - Reverse Leakage @ Vr: 40µA @ 1800V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD?.B
패키지: 9-SMD Module
재고6,960
IXDE509D1T/R
IXYS

IC GATE DRIVER 9A 6-DFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4x5)
패키지: 6-VDFN Exposed Pad
재고7,584
DMA10P1600UZ-TRL
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
DMA10IM1600UZ-TRL
IXYS

DIODE GEN PURP 1.6KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
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DPF30P600HR
IXYS

DIODE GEN PURP 600V 30A ISO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 500 µA @ 600 V
  • Capacitance @ Vr, F: 26pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
IXTP60N20X4
IXYS

MOSFET ULTRA X4 200V 60A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 (IXTP)
  • Package / Case: TO-220-3
패키지: -
재고1,056
DFE250X600NA
IXYS

DIODE MOD GP 600V 125A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 3 mA @ 600 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: -
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DSSK48-003BS-TRL
IXYS

DIODE ARR SCHOTT 30V 25A TO263AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 440 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 30 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
패키지: -
Request a Quote
IXGA20N250HV-TRL
IXYS

DISC IGBT NPT VERY HI VOLTAGE TO

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 53 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
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QJ6016RH5TP
IXYS

TRIAC ALTERNISTOR 600V 16A TO220

  • Triac Type: Alternistor - Snubberless
  • Voltage - Off State: 600 V
  • Current - On State (It (RMS)) (Max): 16 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.3 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A
  • Current - Gate Trigger (Igt) (Max): 50 mA
  • Current - Hold (Ih) (Max): 50 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
재고2,997
IXFT78N60X3HV
IXYS

MOSFET ULTRA 600V 78A TO268HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268HV (IXFT)
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
패키지: -
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