페이지 116 - IXYS 제품 | Heisener Electronics
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IXYS 제품

기록 5,468
페이지  116/196
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IXGB200N60B3
IXYS

IGBT 600V 75A 1250W PLUS264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
  • Power - Max: 1250W
  • Switching Energy: 1.6mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 750nC
  • Td (on/off) @ 25°C: 44ns/310ns
  • Test Condition: 300V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: PLUS264?
패키지: TO-264-3, TO-264AA
재고5,088
IXGH240N30PB
IXYS

IGBT 300V 48A TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고3,712
IXBH6N170
IXYS

IGBT 1700V 12A 75W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
  • Power - Max: 75W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.08µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXBH)
패키지: TO-247-3
재고4,784
IXGP15N120B
IXYS

IGBT 1200V 30A 150W TO220AB

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
  • Power - Max: 150W
  • Switching Energy: 1.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: 25ns/180ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,744
MWI80-12T6K
IXYS

MOD IGBT SIXPACK RBSOA 1200V E1

  • IGBT Type: Trench
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 270W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E1
  • Supplier Device Package: E1
패키지: E1
재고7,952
MUBW20-06A6K
IXYS

MODULE IGBT CBI E1

  • IGBT Type: NPT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Power - Max: 85W
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Current - Collector Cutoff (Max): 600µA
  • Input Capacitance (Cies) @ Vce: 0.8nF @ 25V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E1
  • Supplier Device Package: E1
패키지: E1
재고3,296
IXFE36N100
IXYS

MOSFET N-CH 1000V 33A ISOPLUS227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 33A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 455nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 580W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고2,320
IXFE180N20
IXYS

MOSFET N-CH 200V 158A ISOPLUS227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 158A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고2,640
IXFL70N60Q2
IXYS

MOSFET N-CH 600V 37A ISOPLUS264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 92 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS264?
  • Package / Case: ISOPLUS264?
패키지: ISOPLUS264?
재고3,632
IXFK38N80Q2
IXYS

MOSFET N-CH 800V 38A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
패키지: TO-264-3, TO-264AA
재고3,392
IXTN90P20P
IXYS

MOSFET P-CH 200V 90A SOT227

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고5,920
IXFN32N80P
IXYS

MOSFET N-CH 800V 29A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 29A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고6,288
IXTH16P20
IXYS

MOSFET P-CH 200V 16A TO-247

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,256
IXTA74N15T
IXYS

MOSFET N-CH 150V 74A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,032
IXFN140N20P
IXYS

MOSFET N-CH 200V 115A SOT227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 115A
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 680W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고2,100
IXFP80N25X3
IXYS

MOSFET N-CH 250V 80A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB (IXFP)
  • Package / Case: TO-220-3
패키지: TO-220-3
재고5,952
IXTH32N65X
IXYS

MOSFET N-CH 650V 32A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2205pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,320
hot IXTQ36N30P
IXYS

MOSFET N-CH 300V 36A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고429,192
VWM200-01P
IXYS

MOSFET 6N-CH 100V 210A V2

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 210A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
패키지: V2-PAK
재고7,968
CS23-16IO2
IXYS

SCR PHASE CONTROL 1600V 25A TO48

  • Voltage - Off State: 1600V
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 50mA
  • Voltage - On State (Vtm) (Max): 1.8V
  • Current - On State (It (AV)) (Max): 32A
  • Current - On State (It (RMS)) (Max): 50A
  • Current - Hold (Ih) (Max): 100mA
  • Current - Off State (Max): 3mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 450A, 480A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: TO-208AA, TO-48-3, Stud
  • Supplier Device Package: TO-208AA (TO-48)
패키지: TO-208AA, TO-48-3, Stud
재고3,840
MCC95-12IO1B
IXYS

THYRISTOR MODULE 1200V 2X116A

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 116A
  • Current - On State (It (RMS)) (Max): 180A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
패키지: TO-240AA
재고4,336
VUO84-16NO7
IXYS

DIODE BRIDGE 1600V 90A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1.08V @ 30A
  • Current - Reverse Leakage @ Vr: 100µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-D
  • Supplier Device Package: PWS-D-Flat
패키지: PWS-D
재고6,880
VUO25-08NO8
IXYS

RECT BRIDGE 3PH 25A 800V FO-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
  • Current - Reverse Leakage @ Vr: 300µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, FO-B
  • Supplier Device Package: PWS-E1
패키지: 5-Square, FO-B
재고7,088
IXBOD1-07
IXYS

IC SGL DIODE BOD 0.9A 700V FP

  • Voltage - Clamping: 700V
  • Technology: Mixed Technology
  • Number of Circuits: 1
  • Number of Circuits: 1
  • Applications: High Voltage
  • Mounting Type: Through Hole
  • Package / Case: Radial
  • Supplier Device Package: FP-Case
패키지: Radial
재고7,524
W3477MC360
IXYS

DIODE GEN PURP 3.6KV 3470A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 3470A
  • Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 38 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
패키지: -
Request a Quote
W1748LC250
IXYS

DIODE GEN PURP 2.5KV 1748A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 1748A
  • Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 2500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
ITF48IF1200HR
IXYS

IGBT TRENCH 1200V 72A ISO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 72 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 390 W
  • Switching Energy: 3mJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 175 nC
  • Td (on/off) @ 25°C: 26ns/350ns
  • Test Condition: 600V, 40A, 12Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
패키지: -
Request a Quote
MKE38P600TLB
IXYS

MOSFET 600V 50A ISOPLUS-SMPD

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
패키지: -
Request a Quote