IXYS 제품

FID60-06D

IXYS

IGBT 600V 65A 200W I4PAC5

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 65A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 1mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: -
• Test Condition: 300V, 30A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 70ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

IXGH40N120C3D1

IXYS

IGBT 1200V 75A 380W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
• Power - Max: 380W
• Switching Energy: 1.8mJ (on), 550µJ (off)
• Input Type: Standard
• Gate Charge: 142nC
• Td (on/off) @ 25°C: 17ns/130ns
• Test Condition: 600V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

IXGH16N170A

IXYS

IGBT 1700V 16A 190W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
• Power - Max: 190W
• Switching Energy: 900µJ (off)
• Input Type: Standard
• Gate Charge: 65nC
• Td (on/off) @ 25°C: 36ns/160ns
• Test Condition: 850V, 16A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

IXGH60N30C3

IXYS

IGBT 300V 75A 300W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 420A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
• Power - Max: 300W
• Switching Energy: 150µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 101nC
• Td (on/off) @ 25°C: 23ns/108ns
• Test Condition: 200V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

MWI75-12A8T

IXYS

IGBT E9PACK

• IGBT Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 125A
• Power - Max: 500W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
• Current - Collector Cutoff (Max): 5mA
• Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: -
• Supplier Device Package: -

패키지: -

IXTC75N10

IXYS

MOSFET N-CH 100V 72A ISOPLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS220?
• Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

IXFN44N50U3

IXYS

MOSFET N-CH 500V 44A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 44A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

IXKC15N60C5

IXYS

MOSFET N-CH 600V 15A ISOPLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS220?
• Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

IXFP4N60P3

IXYS

MOSFET N-CH 600V 4A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

IXFH76N07-11

IXYS

MOSFET N-CH 70V 76A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 70V
• Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

패키지: TO-247-3

IXFN230N20T

IXYS

MOSFET N-CH 200V 220A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 220A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1090W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

GMM3X120-0075X2-SMDSAM

IXYS

MOSFET 6N-CH 75V 110A 24-SMD

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 110A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-SMD, Gull Wing
• Supplier Device Package: 24-SMD

패키지: 24-SMD, Gull Wing

CS22-08IO1M

IXYS

THYRISTOR PHASE 800V TO-220ABFP

• Voltage - Off State: 800V
• Voltage - Gate Trigger (Vgt) (Max): 1.3V
• Current - Gate Trigger (Igt) (Max): 30mA
• Voltage - On State (Vtm) (Max): 1.3V
• Current - On State (It (AV)) (Max): 16A
• Current - On State (It (RMS)) (Max): 25A
• Current - Hold (Ih) (Max): 60mA
• Current - Off State (Max): 10µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Isolated Tab
• Supplier Device Package: TO-220 Isolated Tab

패키지: TO-220-3 Isolated Tab

MCMA65P1200TA

IXYS

MOD THYRISTOR DUAL 12KV TO-240

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 65A
• Current - On State (It (RMS)) (Max): 105A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 95mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1240A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

패키지: TO-240AA

HTZ270H56K

IXYS

DIODE MODULE 56KV 3.4A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 56000V
• Current - Average Rectified (Io) (per Diode): 3.4A
• Voltage - Forward (Vf) (Max) @ If: 46V @ 12A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 56000V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: Module

DSP45-12A

IXYS

DIODE ARRAY GP 1200V 45A TO247AD

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 45A
• Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

VUO105-18NO7

IXYS

RECT BRIDGE 3PH 140A 1800V PWS-C

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 140A
• Voltage - Forward (Vf) (Max) @ If: 1.09V @ 40A
• Current - Reverse Leakage @ Vr: 100µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-C
• Supplier Device Package: PWS-C

패키지: PWS-C

VUO55-16NO7

IXYS

RECT BRIDGE 3PH 58A 1600V PWS-B

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 58A
• Voltage - Forward (Vf) (Max) @ If: 1.03V @ 20A
• Current - Reverse Leakage @ Vr: 100µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-B
• Supplier Device Package: PWS-B

패키지: PWS-B

VUM25-05E

IXYS

MOSFET STAGE BOOST 500V V1-A

• Diode Type: Three Phase (PFC Module)
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 22A
• Current - Reverse Leakage @ Vr: 1.5mA @ 600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: V1-A
• Supplier Device Package: V1A-PAK

패키지: V1-A

VBO22-12NO8

IXYS

RECT BRIDGE 21A 1200V FO-B

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 21A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, FO-B
• Supplier Device Package: FO-B

패키지: 4-Square, FO-B

IXDF504D1

IXYS

IC GATE DRIVER 4A 6-DFN

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 9ns, 8ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (4x5)

패키지: 6-VDFN Exposed Pad

IXBOD2-13

IXYS

BREAKOVER DIODE

• Voltage - Breakover: -
• Voltage - Off State: -
• Voltage - On State: -
• Current - Peak Pulse (8/20µs): -
• Current - Peak Pulse (10/1000µs): -
• Current - Hold (Ih): 20mA
• Number of Elements: 1
• Capacitance: -
• Mounting Type: Through Hole
• Package / Case: Radial

패키지: Radial

IXBOD1-14R

IXYS

IC DIODE MODULE BOD 1.25A 1400V

• Voltage - Clamping: 1400V (1.4kV)
• Technology: Mixed Technology
• Number of Circuits: 2
• Number of Circuits: 2
• Applications: High Voltage
• Mounting Type: PCB, Through Hole
• Package / Case: Radial
• Supplier Device Package: BOD

패키지: Radial

IXBH42N300HV

IXYS

DISC IGBT BIMSFT-VERYHIVOLT TO-2

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000 V
• Current - Collector (Ic) (Max): 104 A
• Current - Collector Pulsed (Icm): 400 A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
• Power - Max: 500 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 200 nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.7 µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: TO-247HV

패키지: -

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CLA40E1200HR

IXYS

SCR 1.2KV 63A ISO247

• Voltage - Off State: 1.2 kV
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 50 mA
• Voltage - On State (Vtm) (Max): 1.25 V
• Current - On State (It (AV)) (Max): 40 A
• Current - On State (It (RMS)) (Max): 63 A
• Current - Hold (Ih) (Max): 100 mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
• SCR Type: Standard Recovery
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISO247

패키지: -

E1780TG65E

IXYS

DIODE GEN PURP 3.6KV 1780A -

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3600 V
• Current - Average Rectified (Io): 1780A
• Voltage - Forward (Vf) (Max) @ If: 3.83 V @ 1780 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.22 µs
• Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 140°C

패키지: -

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IXTA150N15X4-7

IXYS

MOSFET N-CH 150V 150A TO263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7 (IXTA)
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

패키지: -

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DPG10IM300UC-TRL

IXYS

DIODE GEN PURP 300V 10A TO252AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 300 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -