페이지 179 - IXYS 제품 | Heisener Electronics
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IXYS 제품

기록 5,468
페이지  179/196
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hot IXGH30N60B2D1
IXYS

IGBT 600V 70A 190W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 13ns/110ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고38,316
IXA4IF1200TC
IXYS

IGBT 1200V 9A 45W TO252AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 45W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 3A, 330 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고6,592
IXGA12N60CD1
IXYS

IGBT 600V 24A 100W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,848
hot IXGQ90N27PB
IXYS

IGBT 270V 90A 150W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 270V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고125,064
IXFX30N100Q2
IXYS

MOSFET N-CH 1000V 30A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고7,168
IXTK75N30
IXYS

MOSFET N-CH 300V 75A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 (IXTK)
  • Package / Case: TO-264-3, TO-264AA
패키지: TO-264-3, TO-264AA
재고7,600
FMD15-06KC5
IXYS

MOSFET N-CH 600V 15A I4-PAC-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS i4-PAC?
  • Package / Case: i4-Pac?-5
패키지: i4-Pac?-5
재고7,648
IXTT8P50
IXYS

MOSFET P-CH 500V 8A TO-268

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고2,656
IXTP340N04T4
IXYS

MOSFET N-CH 40V 340A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 256nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고3,152
IXTP08N100P
IXYS

MOSFET N-CH 1000V 800MA TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고2,400
IXFJ80N25X3
IXYS

MOSFET N-CH 250V 44A ISO TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXFJ)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,000
hot IXKH70N60C5
IXYS

MOSFET N-CH 600V 70A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXKH)
  • Package / Case: TO-247-3
패키지: TO-247-3
재고14,712
VVZ70-14IO7
IXYS

RECT BRIDGE 3PH 1400V FO-T-A

  • Structure: Bridge, 3-Phase - SCRs/Diodes
  • Number of SCRs, Diodes: 3 SCRs, 3 Diodes
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 70A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
패키지: FO-T-A
재고3,232
VHO55-12IO7
IXYS

RECT BRIDGE 1PH 1200V FO-T-A

  • Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
  • Number of SCRs, Diodes: 2 SCRs, 2 Diodes
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 53A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: FO-T-A
패키지: FO-T-A
재고6,464
MCD95-08IO8B
IXYS

THYRISTOR DOUB 800V 116A TO-240

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 116A
  • Current - On State (It (RMS)) (Max): 180A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
패키지: TO-240AA
재고6,132
hot DSI45-16A
IXYS

DIODE GEN PURP 1.6KV 45A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 45A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20µA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-247-2
재고4,816
VUO80-18NO1
IXYS

RECT BRIDGE 3PH 82A 1800V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 82A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
  • Current - Reverse Leakage @ Vr: 40µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
패키지: V1-A
재고7,632
VBO52-12NO7
IXYS

DIODE BRIDGE 52A 1200V PWS-D

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 52A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 20A
  • Current - Reverse Leakage @ Vr: 40µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-D
  • Supplier Device Package: PWS-D
패키지: PWS-D
재고6,176
VUO18-12DT8
IXYS

RECT BRIDGE 18A 1200V FO-B

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 5-Square, FO-B
  • Supplier Device Package: FO-B
패키지: 5-Square, FO-B
재고3,648
hot LDS8620-002-T2
IXYS

IC LED DRIVER RGLTR DIM 16TQFN

  • Type: DC DC Regulator
  • Topology: Switched Capacitor (Charge Pump)
  • Internal Switch(s): Yes
  • Number of Outputs: 2
  • Voltage - Supply (Min): 2.7V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: -
  • Current - Output / Channel: 96mA
  • Frequency: 1.1MHz
  • Dimming: PWM
  • Applications: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-WFQFN Exposed Pad
  • Supplier Device Package: 16-TQFN (3x3)
패키지: 16-WFQFN Exposed Pad
재고24,000
IXDN430CI
IXYS

IC DRVR MOSF/IGBT 30A TO220-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 8.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 30A, 30A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 18ns, 16ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
패키지: TO-220-5
재고6,720
MMIX1X340N65B4
IXYS

IGBT 650V 450A 24-SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 450 A
  • Current - Collector Pulsed (Icm): 1200 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
  • Power - Max: 1200 W
  • Switching Energy: 4.4mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 553 nC
  • Td (on/off) @ 25°C: 62ns/245ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 76 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
패키지: -
Request a Quote
MCMA160P1800YA-MI
IXYS

SCR MODULE 1.8KV 160A MODULE

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1.8 kV
  • Current - On State (It (AV)) (Max): 160 A
  • Current - On State (It (RMS)) (Max): 250 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: -
Request a Quote
IXGT6N170A-TRL
IXYS

IGBT 1700V 6A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 14 A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 75 W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5 nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: -
Request a Quote
DSP25-16AT-TRL
IXYS

DIODE ARRAY GP 1600V 25A TO268AA

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
패키지: -
Request a Quote
N3175HE180
IXYS

SCR 1.8KV 6310A W80

  • Voltage - Off State: 1.8 kV
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 300 mA
  • Voltage - On State (Vtm) (Max): 1.2 V
  • Current - On State (It (AV)) (Max): 3175 A
  • Current - On State (It (RMS)) (Max): 6310 A
  • Current - Hold (Ih) (Max): 1 A
  • Current - Off State (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: W80
패키지: -
Request a Quote
IXTQ88N28T
IXYS

MOSFET N-CH TO3P

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
SJ4008DS2TP
IXYS

8 AMP HIGH TEMPERATURE SENSITIVE

  • Voltage - Off State: 400 V
  • Voltage - Gate Trigger (Vgt) (Max): 800 mV
  • Current - Gate Trigger (Igt) (Max): 200 µA
  • Voltage - On State (Vtm) (Max): 1.6 V
  • Current - On State (It (AV)) (Max): 5.1 A
  • Current - On State (It (RMS)) (Max): 8 A
  • Current - Hold (Ih) (Max): 6 mA
  • Current - Off State (Max): 5 µA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
  • SCR Type: Sensitive Gate
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: -
재고2,130