페이지 193 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXGR32N60C	IXYS	IGBT 600V 45A 140W ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A Power - Max: 140W Switching Energy: 320µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 25ns/85ns Test Condition: 480V, 32A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	패키지: ISOPLUS247?	재고2,304
IXGR40N60BD1	IXYS	IGBT 600V 70A 200W ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 200W Switching Energy: 2.7mJ (off) Input Type: Standard Gate Charge: 116nC Td (on/off) @ 25°C: 25ns/180ns Test Condition: 480V, 40A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	패키지: ISOPLUS247?	재고2,112
IXGH20N100	IXYS	IGBT 1000V 40A 150W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Power - Max: 150W Switching Energy: 3.5mJ (off) Input Type: Standard Gate Charge: 73nC Td (on/off) @ 25°C: 30ns/350ns Test Condition: 800V, 20A, 47 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고6,160
MWI50-12T7T	IXYS	MOD IGBT SIX-PACK RBSOA E2 IGBT Type: Trench Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Power - Max: 270W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 3.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: E2	재고5,744
IXFN100N10S3	IXYS	MOSFET N-CH 100V 100A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고7,056
IXTP98N075T	IXYS	MOSFET N-CH 75V 98A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고3,824
IXTP88N085T	IXYS	MOSFET N-CH 85V 88A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고5,776
IXFC20N80P	IXYS	MOSFET N-CH 800V 11A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	패키지: ISOPLUS220?	재고7,392
IXFH15N60	IXYS	MOSFET N-CH 600V 15A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고3,360
IXFB82N60Q3	IXYS	MOSFET N-CH 600V 82A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1560W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 41A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고7,728
IXFK60N55Q2	IXYS	MOSFET N-CH 550V 60A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고5,760
IXTK140N20P	IXYS	MOSFET N-CH 200V 140A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고7,536
IXFH94N30P3	IXYS	MOSFET N-CH 300V 94A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	패키지: TO-247-3	재고7,488
IXFH28N50Q	IXYS	MOSFET N-CH 500V 28A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고6,352
IXTH75N15	IXYS	MOSFET N-CH 150V 75A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: TO-247-3	재고111,864
IXTQ102N25T	IXYS	MOSFET N-CH 250V 102A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고2,784
IXFA180N10T2	IXYS	MOSFET N-CH 100V 180A TO-263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,280
IXFK55N50F	IXYS	MOSFET N-CH 500V 55A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 27.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXFK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고6,112
IXFH26N60P	IXYS	MOSFET N-CH 600V 26A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고4,752
IXFP34N65X2	IXYS	MOSFET N-CH 650V 34A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고8,820
FMM50-025TF	IXYS	MOSFET 2N-CH 250V 30A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고4,960
MDD26-12N1B	IXYS	DIODE MODULE 1.2KV 36A TO240AA Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 36A Voltage - Forward (Vf) (Max) @ If: 1.38V @ 80A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 1200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: TO-240AA Supplier Device Package: TO-240AA	패키지: TO-240AA	재고7,888
DSSK60-02AR	IXYS	DIODE ARRAY SCHOTTKY 200V 30A Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 850mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	패키지: ISOPLUS247?	재고6,240
DSP8-12AC	IXYS	DIODE ARRAY 1200V 11A ISOPLUS220 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 11A Voltage - Forward (Vf) (Max) @ If: 1.22V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1200V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	패키지: ISOPLUS220?	재고5,808
IX6S11S6T/R	IXYS	IC DRVR HALF BRIDGE 6A 18-SOIC Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295", 7.50mm Width) Exposed Pad Supplier Device Package: 18-SOIC	패키지: 18-SOIC (0.295", 7.50mm Width) Exposed Pad	재고2,560
DMA120B800LB-TUB	IXYS	BIPOLAR MODULE-BRIDGE RECTIFIER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 130 A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	패키지: -	Request a Quote
MDMA425P1600PTSF	IXYS	DIODE MOD GP 1.6KV 425A SIMBUS Diode Configuration: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io) (per Diode): 425A Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SimBus F Supplier Device Package: SimBus F	패키지: -	Request a Quote
IXYH55N120B4H1	IXYS	IGBT TRENCH 1200V 138A TO247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 138 A Current - Collector Pulsed (Icm): 310 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A Power - Max: 650 W Switching Energy: 3.4mJ (on), 2.75mJ (off) Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 27ns/215ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 420 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	패키지: -	Request a Quote

IXGR32N60C

IXYS

IGBT 600V 45A 140W ISOPLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 32A
Power - Max: 140W
Switching Energy: 320µJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 25ns/85ns
Test Condition: 480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

재고2,304

IXGR40N60BD1

IXYS

IGBT 600V 70A 200W ISOPLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 200W
Switching Energy: 2.7mJ (off)
Input Type: Standard
Gate Charge: 116nC
Td (on/off) @ 25°C: 25ns/180ns
Test Condition: 480V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

재고2,112

IXGH20N100

IXYS

IGBT 1000V 40A 150W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Power - Max: 150W
Switching Energy: 3.5mJ (off)
Input Type: Standard
Gate Charge: 73nC
Td (on/off) @ 25°C: 30ns/350ns
Test Condition: 800V, 20A, 47 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고6,160

MWI50-12T7T

IXYS

MOD IGBT SIX-PACK RBSOA E2

IGBT Type: Trench
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Power - Max: 270W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 3.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: E2

재고5,744

IXFN100N10S3

IXYS

MOSFET N-CH 100V 100A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고7,056

IXTP98N075T

IXYS

MOSFET N-CH 75V 98A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고3,824

IXTP88N085T

IXYS

MOSFET N-CH 85V 88A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고5,776

IXFC20N80P

IXYS

MOSFET N-CH 800V 11A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고7,392

IXFH15N60

IXYS

MOSFET N-CH 600V 15A TO-247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고3,360

IXFB82N60Q3

IXYS

MOSFET N-CH 600V 82A PLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1560W (Tc)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 41A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS264?
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고7,728

IXFK60N55Q2

IXYS

MOSFET N-CH 550V 60A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 88 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264AA (IXFK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고5,760

IXTK140N20P

IXYS

MOSFET N-CH 200V 140A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고7,536

IXFH94N30P3

IXYS

MOSFET N-CH 300V 94A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5510pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

패키지: TO-247-3

재고7,488

IXFH28N50Q

IXYS

MOSFET N-CH 500V 28A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고6,352

IXTH75N15

IXYS

MOSFET N-CH 150V 75A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: TO-247-3

재고111,864

IXTQ102N25T

IXYS

MOSFET N-CH 250V 102A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고2,784

IXFA180N10T2

IXYS

MOSFET N-CH 100V 180A TO-263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXFA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,280

IXFK55N50F

IXYS

MOSFET N-CH 500V 55A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 27.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXFK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고6,112

IXFH26N60P

IXYS

MOSFET N-CH 600V 26A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고4,752

IXFP34N65X2

IXYS

MOSFET N-CH 650V 34A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 105 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고8,820

FMM50-025TF

IXYS

MOSFET 2N-CH 250V 30A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고4,960

MDD26-12N1B

IXYS

DIODE MODULE 1.2KV 36A TO240AA

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 36A
Voltage - Forward (Vf) (Max) @ If: 1.38V @ 80A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 1200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Supplier Device Package: TO-240AA

패키지: TO-240AA

재고7,888

DSSK60-02AR

IXYS

DIODE ARRAY SCHOTTKY 200V 30A

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

재고6,240

DSP8-12AC

IXYS

DIODE ARRAY 1200V 11A ISOPLUS220

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 11A
Voltage - Forward (Vf) (Max) @ If: 1.22V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

패키지: ISOPLUS220?

재고5,808

IX6S11S6T/R

IXYS

IC DRVR HALF BRIDGE 6A 18-SOIC

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 18-SOIC (0.295", 7.50mm Width) Exposed Pad
Supplier Device Package: 18-SOIC

패키지: 18-SOIC (0.295", 7.50mm Width) Exposed Pad

재고2,560

DMA120B800LB-TUB

IXYS

BIPOLAR MODULE-BRIDGE RECTIFIER

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

패키지: -

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MDMA425P1600PTSF

IXYS

DIODE MOD GP 1.6KV 425A SIMBUS

Diode Configuration: -
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io) (per Diode): 425A
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SimBus F
Supplier Device Package: SimBus F

패키지: -

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IXYH55N120B4H1

IXYS

IGBT TRENCH 1200V 138A TO247

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 138 A
Current - Collector Pulsed (Icm): 310 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Power - Max: 650 W
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 27ns/215ns
Test Condition: 600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 420 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

패키지: -

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