페이지 30 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXDH35N60BD1	IXYS	IGBT 600V 60A 250W TO247AD IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 70A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A Power - Max: 250W Switching Energy: 1.6mJ (on), 800µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: - Test Condition: 300V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): 40ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD (IXDH)	패키지: TO-3P-3 Full Pack	재고3,312
MUBW50-12E8	IXYS	MODULE IGBT CBI E3 IGBT Type: - Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 90A Power - Max: 350W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Current - Collector Cutoff (Max): 800µA Input Capacitance (Cies) @ Vce: 3.8nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	패키지: E3	재고2,064
IXFV36N50P	IXYS	MOSFET N-CH 500V 36A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	패키지: TO-220-3, Short Tab	재고7,296
IXFX24N90Q	IXYS	MOSFET N-CH 900V 24A PLUS 247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	패키지: TO-247-3	재고7,536
IXFR180N10	IXYS	MOSFET N-CH 100V 165A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	패키지: ISOPLUS247?	재고5,792
IXFH50N60X	IXYS	MOSFET N-CH 600V 50A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	패키지: TO-247-3	재고3,328
IXTQ130N15T	IXYS	MOSFET N-CH 150V 130A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: TO-3P-3, SC-65-3	재고390,000
IXKR25N80C	IXYS	MOSFET N-CH 800V 25A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	패키지: ISOPLUS247?	재고6,096
IXFX320N17T2	IXYS	MOSFET N-CH 170V 320A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 320A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1670W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	패키지: TO-247-3	재고4,096
MCC56-18IO8B	IXYS	MOD THYRISTOR DUAL 1800V TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 64A Current - On State (It (RMS)) (Max): 100A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고7,200
DHG10I1800PA	IXYS	DIODE GEN PURP 1.8KV 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.23V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 50µA @ 1800V Capacitance @ Vr, F: 3pF @ 900V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고3,264
DSEP29-12A	IXYS	DIODE GEN PURP 1.2KV 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고11,544
MDK600-16N1	IXYS	DIODE MODULE 1.6KV 883A Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 883A Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18µs Current - Reverse Leakage @ Vr: 50mA @ 1600V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고7,376
VUO100-14NO7	IXYS	RECT BRIDGE 100A 1400V FO-T-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A Current - Reverse Leakage @ Vr: 500µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-T-A Supplier Device Package: FO-T-A	패키지: FO-T-A	재고7,120
VUO122-08NO7	IXYS	RECT BRIDGE 3PH 800V ECO-PAC2 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 117A Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A Current - Reverse Leakage @ Vr: 100µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고3,696
VBO40-16NO6	IXYS	DIODE BRIDGE 40A 1600V SOT-227B Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A Current - Reverse Leakage @ Vr: 40µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고2,624
DMA150YA1600NA	IXYS	RECT BRIDGE GP 1600V SOT227B Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.21V @ 50A Current - Reverse Leakage @ Vr: 100µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고3,808
VBO68-16NO7	IXYS	DIODE BRIDGE 1600V 68A ECO-PAC1 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 68A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A Current - Reverse Leakage @ Vr: 40µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	패키지: ECO-PAC1	재고6,000
VBO21-12NO7	IXYS	DIODE BRIDGE 21A 1200V ECO-PAC1 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 21A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	패키지: ECO-PAC1	재고6,576
LDS8865002-T2-250	IXYS	IC LED DRIVER RGLTR DIM 16TQFN Type: DC DC Regulator Topology: Switched Capacitor (Charge Pump) Internal Switch(s): Yes Number of Outputs: 6 Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V Voltage - Output: 6V Current - Output / Channel: 32mA Frequency: 1.1MHz Dimming: PWM Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Exposed Pad Supplier Device Package: 16-TQFN (3x3)	패키지: 16-WFQFN Exposed Pad	재고5,504
IXDI514PI	IXYS	IC GATE DRIVER SGL 14A 8-DIP Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 1V, 2.5V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고3,424
IXDF402SIA	IXYS	IC MOSFET DRIVER DUAL 2A 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고101,700
IX2R11M6	IXYS	IC DRVR HALF BRIDGE 2A 16-MLP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 35 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 500V Rise / Fall Time (Typ): 8ns, 7ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VDFN Exposed Pad Supplier Device Package: 16-MLP (7x6)	패키지: 16-VDFN Exposed Pad	재고7,088
CLA100E1200TZ-TUB	IXYS	THYRISTOR SCR 1200V 100A TO268AA Voltage - Off State: 1.2 kV Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 40 mA Voltage - On State (Vtm) (Max): - Current - On State (It (AV)) (Max): 100 A Current - On State (It (RMS)) (Max): 160 A Current - Hold (Ih) (Max): 100 mA Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): - SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA (D3Pak-HV)	패키지: -	재고75
IXFK52N100X	IXYS	MOSFET N-CH 1000V 52A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	패키지: -	Request a Quote
IX4310N	IXYS	HIGH SPEED LOW-SIDE DRIVER 2A 8L Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
MCB60I1200TZ-TUB	IXYS	SICFET N-CH 1.2KV 90A TO268AA FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268AA (D3Pak-HV) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote
N3175HE160	IXYS	SCR 1.6KV 6310A W80 Voltage - Off State: 1.6 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.2 V Current - On State (It (AV)) (Max): 3175 A Current - On State (It (RMS)) (Max): 6310 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W80	패키지: -	Request a Quote

IXDH35N60BD1

IXYS

IGBT 600V 60A 250W TO247AD

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 70A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
Power - Max: 250W
Switching Energy: 1.6mJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: -
Test Condition: 300V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr): 40ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD (IXDH)

패키지: TO-3P-3 Full Pack

재고3,312

MUBW50-12E8

IXYS

MODULE IGBT CBI E3

IGBT Type: -
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 90A
Power - Max: 350W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Current - Collector Cutoff (Max): 800µA
Input Capacitance (Cies) @ Vce: 3.8nF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

패키지: E3

재고2,064

IXFV36N50P

IXYS

MOSFET N-CH 500V 36A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고7,296

IXFX24N90Q

IXYS

MOSFET N-CH 900V 24A PLUS 247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

패키지: TO-247-3

재고7,536

IXFR180N10

IXYS

MOSFET N-CH 100V 165A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고5,792

IXFH50N60X

IXYS

MOSFET N-CH 600V 50A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 660W (Tc)
Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

패키지: TO-247-3

재고3,328

IXTQ130N15T

IXYS

MOSFET N-CH 150V 130A TO-3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 750W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 65A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

재고390,000

IXKR25N80C

IXYS

MOSFET N-CH 800V 25A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 150 mOhm @ 18A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고6,096

IXFX320N17T2

IXYS

MOSFET N-CH 170V 320A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 170V
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1670W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247?-3
Package / Case: TO-247-3

패키지: TO-247-3

재고4,096

MCC56-18IO8B

IXYS

MOD THYRISTOR DUAL 1800V TO240AA

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 64A
Current - On State (It (RMS)) (Max): 100A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고7,200

DHG10I1800PA

IXYS

DIODE GEN PURP 1.8KV 10A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2.23V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 50µA @ 1800V
Capacitance @ Vr, F: 3pF @ 900V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고3,264

DSEP29-12A

IXYS

DIODE GEN PURP 1.2KV 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고11,544

MDK600-16N1

IXYS

DIODE MODULE 1.6KV 883A

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 883A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18µs
Current - Reverse Leakage @ Vr: 50mA @ 1600V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고7,376

VUO100-14NO7

IXYS

RECT BRIDGE 100A 1400V FO-T-A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-T-A
Supplier Device Package: FO-T-A

패키지: FO-T-A

재고7,120

VUO122-08NO7

IXYS

RECT BRIDGE 3PH 800V ECO-PAC2

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 117A
Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
Current - Reverse Leakage @ Vr: 100µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고3,696

VBO40-16NO6

IXYS

DIODE BRIDGE 40A 1600V SOT-227B

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
Current - Reverse Leakage @ Vr: 40µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고2,624

DMA150YA1600NA

IXYS

RECT BRIDGE GP 1600V SOT227B

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.21V @ 50A
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고3,808

VBO68-16NO7

IXYS

DIODE BRIDGE 1600V 68A ECO-PAC1

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 68A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
Current - Reverse Leakage @ Vr: 40µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

재고6,000

VBO21-12NO7

IXYS

DIODE BRIDGE 21A 1200V ECO-PAC1

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 21A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

재고6,576

LDS8865002-T2-250

IXYS

IC LED DRIVER RGLTR DIM 16TQFN

Type: DC DC Regulator
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Number of Outputs: 6
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Voltage - Output: 6V
Current - Output / Channel: 32mA
Frequency: 1.1MHz
Dimming: PWM
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN Exposed Pad
Supplier Device Package: 16-TQFN (3x3)

패키지: 16-WFQFN Exposed Pad

재고5,504

IXDI514PI

IXYS

IC GATE DRIVER SGL 14A 8-DIP

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 14A, 14A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 22ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고3,424

IXDF402SIA

IXYS

IC MOSFET DRIVER DUAL 2A 8-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고101,700

IX2R11M6

IXYS

IC DRVR HALF BRIDGE 2A 16-MLP

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 35 V
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500V
Rise / Fall Time (Typ): 8ns, 7ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VDFN Exposed Pad
Supplier Device Package: 16-MLP (7x6)

패키지: 16-VDFN Exposed Pad

재고7,088

CLA100E1200TZ-TUB

IXYS

THYRISTOR SCR 1200V 100A TO268AA

Voltage - Off State: 1.2 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 40 mA
Voltage - On State (Vtm) (Max): -
Current - On State (It (AV)) (Max): 100 A
Current - On State (It (RMS)) (Max): 160 A
Current - Hold (Ih) (Max): 100 mA
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): -
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA (D3Pak-HV)

패키지: -

재고75

IXFK52N100X

IXYS

MOSFET N-CH 1000V 52A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

패키지: -

Request a Quote

IX4310N

IXYS

HIGH SPEED LOW-SIDE DRIVER 2A 8L

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

MCB60I1200TZ-TUB

IXYS

SICFET N-CH 1.2KV 90A TO268AA

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268AA (D3Pak-HV)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

Request a Quote

N3175HE160

IXYS

SCR 1.6KV 6310A W80

Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 1.2 V
Current - On State (It (AV)) (Max): 3175 A
Current - On State (It (RMS)) (Max): 6310 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W80

패키지: -

Request a Quote