페이지 37 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
MMIX1G120N120A3V1	IXYS	IGBT 1200V 220A 400W SMPD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 220A Current - Collector Pulsed (Icm): 700A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Power - Max: 400W Switching Energy: 10mJ (on), 33mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 40ns/490ns Test Condition: 960V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): 700ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-PowerSMD, 21 Leads Supplier Device Package: SMPD	패키지: 24-PowerSMD, 21 Leads	재고3,536
IXBF9N160G	IXYS	IGBT 1600V 7A 70W I4PAC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1600V Current - Collector (Ic) (Max): 7A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A Power - Max: 70W Switching Energy: - Input Type: Standard Gate Charge: 34nC Td (on/off) @ 25°C: - Test Condition: 960V, 5A, 27 Ohm, 10V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5 (3 leads)	재고6,704
IXYX25N250CV1HV	IXYS	IGBT 2500V 235A PLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 95A Current - Collector Pulsed (Icm): 235A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Power - Max: 937W Switching Energy: 8.3mJ (on), 7.3mJ (off) Input Type: Standard Gate Charge: 147nC Td (on/off) @ 25°C: 15ns/230ns Test Condition: 1250V, 25A, 5 Ohm, 15V Reverse Recovery Time (trr): 220ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고7,536
IXBX55N300	IXYS	IGBT 3000V 130A 625W PLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 130A Current - Collector Pulsed (Icm): 600A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A Power - Max: 625W Switching Energy: - Input Type: Standard Gate Charge: 335nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 1.9µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고6,160
IXFH80N06	IXYS	MOSFET N-CH 60V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고6,240
IXFH32N50	IXYS	MOSFET N-CH 500V 32A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	패키지: TO-247-3	재고423,384
IXTH10N100D	IXYS	MOSFET N-CH 1000V 10A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±30V FET Feature: Depletion Mode Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: TO-247-3	재고2,336
IXFT20N100P	IXYS	MOSFET N-CH 1000V 20A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고7,248
IXKC20N60C	IXYS	MOSFET N-CH 600V 15A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 190 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	패키지: ISOPLUS220?	재고5,712
IXTA36N30T	IXYS	MOSFET N-CH 300V 36A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,520
IXTP120N04T2	IXYS	MOSFET N-CH 40V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고438,240
IXKR47N60C5	IXYS	MOSFET N-CH 600V 47A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	패키지: ISOPLUS247?	재고6,608
IXFA10N60P	IXYS	MOSFET N-CH 600V 10A D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,256
MCD501-12IO1	IXYS	SCR THRYRISTOR 1200V WC-501 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): - Current - Gate Trigger (Igt) (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): - Current - Hold (Ih) (Max): - Operating Temperature: 125°C (TJ) Mounting Type: Chassis Mount Package / Case: WC-501	패키지: WC-501	재고6,208
MCC310-14IO1	IXYS	MOD THYRISTOR DUAL 1400V Y2-DCB Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 320A Current - On State (It (RMS)) (Max): 500A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A Current - Hold (Ih) (Max): 150mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	패키지: Module	재고6,896
VHF125-12IO7	IXYS	RECT BRIDGE HALF 1200V PWS-E1 Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1) Number of SCRs, Diodes: 2 SCRs, 2 Diodes Voltage - Off State: 1200V Current - On State (It (AV)) (Max): - Current - On State (It (RMS)) (Max): 89A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-E1	패키지: PWS-E1	재고5,600
MCD95-16IO8B	IXYS	MOD THYRISTOR/DIO 1600V TO-240AA Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 116A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고7,776
VUO16012NO7	IXYS	BRIDGE RECT 3 PHASE 1200V 175A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 175A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A Current - Reverse Leakage @ Vr: 200µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-E1 Supplier Device Package: PWS-E1	패키지: PWS-E1	재고3,232
VBO25-16NO2	IXYS	DIODE BRIDGE 31A 1600V AVAL FO-A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 38A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-A Supplier Device Package: FO-A	패키지: 4-Square, FO-A	재고6,576
VUO18-14DT8	IXYS	RECT BRIDGE 18A 1400V FO-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A Current - Reverse Leakage @ Vr: 300µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 5-Square, FO-B Supplier Device Package: FO-B	패키지: 5-Square, FO-B	재고6,832
IXDP610PI	IXYS	IC PWM CTRL BUS DIGITAL 18DIP Applications: PWM Motor Controller Interface: Microprocessor Voltage - Supply: 4.5 V ~ 5.5 V Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP Mounting Type: Through Hole	패키지: 18-DIP (0.300", 7.62mm)	재고31,584
IXFA72N20X3	IXYS	MOSFET N-CH 200V 72A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA (IXFA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고456
CMA40E1600HR	IXYS	SCR 1.6KV 63A ISO247 Voltage - Off State: 1.6 kV Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 50 mA Voltage - On State (Vtm) (Max): 1.23 V Current - On State (It (AV)) (Max): 40 A Current - On State (It (RMS)) (Max): 63 A Current - Hold (Ih) (Max): 100 mA Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A SCR Type: Standard Recovery Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISO247	패키지: -	재고30
MCC550-16IO1	IXYS	MOD SCR THYRISTOR 1600V Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6 kV Current - On State (It (AV)) (Max): 550 A Current - On State (It (RMS)) (Max): 1318 A Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A, 19800A Current - Hold (Ih) (Max): 1 A Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	패키지: -	Request a Quote
CMA50E1600HB	IXYS	SCR 1.6KV 79A TO247 Voltage - Off State: 1.6 kV Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Gate Trigger (Igt) (Max): 50 mA Voltage - On State (Vtm) (Max): 1.3 V Current - On State (It (AV)) (Max): 50 A Current - On State (It (RMS)) (Max): 79 A Current - Hold (Ih) (Max): 100 mA Current - Off State (Max): - Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	패키지: -	재고132
IXTP64N10L2	IXYS	MOSFET N-CH 100V 64A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	패키지: -	재고1,173
IXFQ90N20X3	IXYS	MOSFET N-CH 200V 90A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: -	Request a Quote
DMA10IM1600PZ-TRL	IXYS	DIODE GEN PURP 1.6KV 10A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: 4pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote

MMIX1G120N120A3V1

IXYS

IGBT 1200V 220A 400W SMPD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 220A
Current - Collector Pulsed (Icm): 700A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Power - Max: 400W
Switching Energy: 10mJ (on), 33mJ (off)
Input Type: Standard
Gate Charge: 420nC
Td (on/off) @ 25°C: 40ns/490ns
Test Condition: 960V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): 700ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Supplier Device Package: SMPD

패키지: 24-PowerSMD, 21 Leads

재고3,536

IXBF9N160G

IXYS

IGBT 1600V 7A 70W I4PAC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1600V
Current - Collector (Ic) (Max): 7A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A
Power - Max: 70W
Switching Energy: -
Input Type: Standard
Gate Charge: 34nC
Td (on/off) @ 25°C: -
Test Condition: 960V, 5A, 27 Ohm, 10V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5 (3 leads)

재고6,704

IXYX25N250CV1HV

IXYS

IGBT 2500V 235A PLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 95A
Current - Collector Pulsed (Icm): 235A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Power - Max: 937W
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Input Type: Standard
Gate Charge: 147nC
Td (on/off) @ 25°C: 15ns/230ns
Test Condition: 1250V, 25A, 5 Ohm, 15V
Reverse Recovery Time (trr): 220ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고7,536

IXBX55N300

IXYS

IGBT 3000V 130A 625W PLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 130A
Current - Collector Pulsed (Icm): 600A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
Power - Max: 625W
Switching Energy: -
Input Type: Standard
Gate Charge: 335nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 1.9µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고6,160

IXFH80N06

IXYS

MOSFET N-CH 60V 80A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고6,240

IXFH32N50

IXYS

MOSFET N-CH 500V 32A TO-247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

패키지: TO-247-3

재고423,384

IXTH10N100D

IXYS

MOSFET N-CH 1000V 10A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±30V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: TO-247-3

재고2,336

IXFT20N100P

IXYS

MOSFET N-CH 1000V 20A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 660W (Tc)
Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고7,248

IXKC20N60C

IXYS

MOSFET N-CH 600V 15A ISOPLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 190 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS220?
Package / Case: ISOPLUS220?

패키지: ISOPLUS220?

재고5,712

IXTA36N30T

IXYS

MOSFET N-CH 300V 36A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,520

IXTP120N04T2

IXYS

MOSFET N-CH 40V 120A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고438,240

IXKR47N60C5

IXYS

MOSFET N-CH 600V 47A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

패키지: ISOPLUS247?

재고6,608

IXFA10N60P

IXYS

MOSFET N-CH 600V 10A D2-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 740 mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXFA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,256

MCD501-12IO1

IXYS

SCR THRYRISTOR 1200V WC-501

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): -
Current - Gate Trigger (Igt) (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): -
Current - Hold (Ih) (Max): -
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: WC-501

패키지: WC-501

재고6,208

MCC310-14IO1

IXYS

MOD THYRISTOR DUAL 1400V Y2-DCB

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 320A
Current - On State (It (RMS)) (Max): 500A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Current - Hold (Ih) (Max): 150mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

패키지: Module

재고6,896

VHF125-12IO7

IXYS

RECT BRIDGE HALF 1200V PWS-E1

Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
Number of SCRs, Diodes: 2 SCRs, 2 Diodes
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): -
Current - On State (It (RMS)) (Max): 89A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-E1

패키지: PWS-E1

재고5,600

MCD95-16IO8B

IXYS

MOD THYRISTOR/DIO 1600V TO-240AA

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 116A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고7,776

VUO16012NO7

IXYS

BRIDGE RECT 3 PHASE 1200V 175A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 175A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-E1
Supplier Device Package: PWS-E1

패키지: PWS-E1

재고3,232

VBO25-16NO2

IXYS

DIODE BRIDGE 31A 1600V AVAL FO-A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 38A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-A
Supplier Device Package: FO-A

패키지: 4-Square, FO-A

재고6,576

VUO18-14DT8

IXYS

RECT BRIDGE 18A 1400V FO-B

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 18A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
Current - Reverse Leakage @ Vr: 300µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 5-Square, FO-B
Supplier Device Package: FO-B

패키지: 5-Square, FO-B

재고6,832

IXDP610PI

IXYS

IC PWM CTRL BUS DIGITAL 18DIP

Applications: PWM Motor Controller
Interface: Microprocessor
Voltage - Supply: 4.5 V ~ 5.5 V
Package / Case: 18-DIP (0.300", 7.62mm)
Supplier Device Package: 18-DIP
Mounting Type: Through Hole

패키지: 18-DIP (0.300", 7.62mm)

재고31,584

IXFA72N20X3

IXYS

MOSFET N-CH 200V 72A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA (IXFA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고456

CMA40E1600HR

IXYS

SCR 1.6KV 63A ISO247

Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 50 mA
Voltage - On State (Vtm) (Max): 1.23 V
Current - On State (It (AV)) (Max): 40 A
Current - On State (It (RMS)) (Max): 63 A
Current - Hold (Ih) (Max): 100 mA
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISO247

패키지: -

재고30

MCC550-16IO1

IXYS

MOD SCR THYRISTOR 1600V

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.6 kV
Current - On State (It (AV)) (Max): 550 A
Current - On State (It (RMS)) (Max): 1318 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A, 19800A
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

패키지: -

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CMA50E1600HB

IXYS

SCR 1.6KV 79A TO247

Voltage - Off State: 1.6 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Gate Trigger (Igt) (Max): 50 mA
Voltage - On State (Vtm) (Max): 1.3 V
Current - On State (It (AV)) (Max): 50 A
Current - On State (It (RMS)) (Max): 79 A
Current - Hold (Ih) (Max): 100 mA
Current - Off State (Max): -
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

패키지: -

재고132

IXTP64N10L2

IXYS

MOSFET N-CH 100V 64A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

패키지: -

재고1,173

IXFQ90N20X3

IXYS

MOSFET N-CH 200V 90A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: -

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DMA10IM1600PZ-TRL

IXYS

DIODE GEN PURP 1.6KV 10A TO263HV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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