페이지 50 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXFV12N90PS	IXYS	MOSFET N-CH 900V 12A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	패키지: PLUS-220SMD	재고3,376
IXFT13N100	IXYS	MOSFET N-CH 1KV 12.5A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고3,072
IXTH48N20	IXYS	MOSFET N-CH 200V 48A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 275W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: TO-247-3	재고6,448
IXTA38N15T	IXYS	MOSFET N-CH 150V 38A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,032
IXTH2N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 21 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247HV Package / Case: TO-247-3	패키지: TO-247-3	재고4,368
IXTK90N25L2	IXYS	MOSFET N-CH 250V 90A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고7,860
MCC21-14IO8B	IXYS	MOD THYRISTOR DUAL 1400V TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 21A Current - On State (It (RMS)) (Max): 33A Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고2,208
MMO140-16IO7	IXYS	MODULE AC CONTROL 1600V ECO-PAC1 Structure: 1-Phase Controller - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1600V Current - On State (It (AV)) (Max): 58A Current - On State (It (RMS)) (Max): 90A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 100mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	패키지: Module	재고6,160
MCC95-18IO1B	IXYS	MOD THYRISTOR DUAL 1800V TO240AA Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1800V Current - On State (It (AV)) (Max): 116A Current - On State (It (RMS)) (Max): 180A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고7,184
DSEP60-06AT	IXYS	DIODE GEN PURP 600V 60A TO268AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 650µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고6,448
HTZ110A19K	IXYS	DIODE MODULE 19KV 3.5A Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 19000V Current - Average Rectified (Io) (per Diode): 3.5A Voltage - Forward (Vf) (Max) @ If: 18.3V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 19000V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고2,032
MDD220-14N1	IXYS	DIODE MODULE 1.4KV 270A Y2-DCB Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io) (per Diode): 270A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 1400V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y2-DCB Supplier Device Package: Y2-DCB	패키지: Y2-DCB	재고4,784
DHG40C600HB	IXYS	DIODE ARRAY GP 600V 20A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 2.31V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 30µA @ 600V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고6,400
DSEC29-06AC	IXYS	DIODE ARRAY 600V 15A ISOPLUS220 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 2.03V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 100µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220?	패키지: ISOPLUS220?	재고2,192
DSSK30-0045B	IXYS	DIODE ARRAY SCHOTTKY 45V TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 470mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 45V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	패키지: TO-3P-3 Full Pack	재고3,568
DSEC16-12A	IXYS	DIODE ARRAY GP 1200V 10A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 60µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고2,752
VUO68-08NO7	IXYS	RECT BRIDGE 3PH 800V ECO-PAC1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 68A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Current - Reverse Leakage @ Vr: 40µA @ 800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	패키지: ECO-PAC1	재고2,352
IXBOD2-11	IXYS	BREAKOVER DIODE Voltage - Breakover: - Voltage - Off State: - Voltage - On State: - Current - Peak Pulse (8/20µs): - Current - Peak Pulse (10/1000µs): - Current - Hold (Ih): 20mA Number of Elements: 1 Capacitance: - Mounting Type: Through Hole Package / Case: Radial	패키지: Radial	재고3,762
DSP8-12S-TRL	IXYS	DIODE ARRAY GP 1200V 11A TO263AA Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 11A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA	패키지: -	Request a Quote
IXTV230N85TS	IXYS	MOSFET N-CH PLUS220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
DAA200X1800NA	IXYS	DIODE MOD AVAL 1800V SOT227B Diode Configuration: 2 Independent Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 1800 V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: -	Request a Quote
MDMA900U1600PTEH	IXYS	BIPOLARMODULE-BRIDGE RECTIFIER E Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 900 A Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A Current - Reverse Leakage @ Vr: 200 µA @ 1600 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	패키지: -	Request a Quote
IXFM10N90	IXYS	MOSFET N-CH 900V 10A TO204AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	패키지: -	Request a Quote
IXFT46N30T	IXYS	MOSFET N-CH 46A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
IXFT60N65X2HV	IXYS	MOSFET N-CH 650V 60A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	재고9
IXFK300N20X3	IXYS	MOSFET N-CH 200V 300A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	패키지: -	재고588
A1237NC280	IXYS	SCR 2.8KV 2555A W11 Voltage - Off State: 2.8 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 400 mA Voltage - On State (Vtm) (Max): 2.7 V Current - On State (It (AV)) (Max): 1237 A Current - On State (It (RMS)) (Max): 2555 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 60 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: W11	패키지: -	Request a Quote
IXTH1918	IXYS	MOSFET N-CH TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote

IXFV12N90PS

IXYS

MOSFET N-CH 900V 12A PLUS220SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

재고3,376

IXFT13N100

IXYS

MOSFET N-CH 1KV 12.5A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 900 mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고3,072

IXTH48N20

IXYS

MOSFET N-CH 200V 48A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 275W (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: TO-247-3

재고6,448

IXTA38N15T

IXYS

MOSFET N-CH 150V 38A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,032

IXTH2N300P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 3000V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 21 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247HV
Package / Case: TO-247-3

패키지: TO-247-3

재고4,368

IXTK90N25L2

IXYS

MOSFET N-CH 250V 90A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXTK)
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고7,860

MCC21-14IO8B

IXYS

MOD THYRISTOR DUAL 1400V TO240AA

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 21A
Current - On State (It (RMS)) (Max): 33A
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 65mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고2,208

MMO140-16IO7

IXYS

MODULE AC CONTROL 1600V ECO-PAC1

Structure: 1-Phase Controller - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1600V
Current - On State (It (AV)) (Max): 58A
Current - On State (It (RMS)) (Max): 90A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 100mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

패키지: Module

재고6,160

MCC95-18IO1B

IXYS

MOD THYRISTOR DUAL 1800V TO240AA

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1800V
Current - On State (It (AV)) (Max): 116A
Current - On State (It (RMS)) (Max): 180A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고7,184

DSEP60-06AT

IXYS

DIODE GEN PURP 600V 60A TO268AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 650µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고6,448

HTZ110A19K

IXYS

DIODE MODULE 19KV 3.5A

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 19000V
Current - Average Rectified (Io) (per Diode): 3.5A
Voltage - Forward (Vf) (Max) @ If: 18.3V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 19000V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고2,032

MDD220-14N1

IXYS

DIODE MODULE 1.4KV 270A Y2-DCB

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io) (per Diode): 270A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 1400V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Supplier Device Package: Y2-DCB

패키지: Y2-DCB

재고4,784

DHG40C600HB

IXYS

DIODE ARRAY GP 600V 20A TO247AD

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 2.31V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

패키지: TO-247-3

재고6,400

DSEC29-06AC

IXYS

DIODE ARRAY 600V 15A ISOPLUS220

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 2.03V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?

패키지: ISOPLUS220?

재고2,192

DSSK30-0045B

IXYS

DIODE ARRAY SCHOTTKY 45V TO247AD

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 45V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

재고3,568

DSEC16-12A

IXYS

DIODE ARRAY GP 1200V 10A TO220AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 60µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고2,752

VUO68-08NO7

IXYS

RECT BRIDGE 3PH 800V ECO-PAC1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 68A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Current - Reverse Leakage @ Vr: 40µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

재고2,352

IXBOD2-11

IXYS

BREAKOVER DIODE

Voltage - Breakover: -
Voltage - Off State: -
Voltage - On State: -
Current - Peak Pulse (8/20µs): -
Current - Peak Pulse (10/1000µs): -
Current - Hold (Ih): 20mA
Number of Elements: 1
Capacitance: -
Mounting Type: Through Hole
Package / Case: Radial

패키지: Radial

재고3,762

DSP8-12S-TRL

IXYS

DIODE ARRAY GP 1200V 11A TO263AA

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io) (per Diode): 11A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA

패키지: -

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IXTV230N85TS

IXYS

MOSFET N-CH PLUS220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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DAA200X1800NA

IXYS

DIODE MOD AVAL 1800V SOT227B

Diode Configuration: 2 Independent
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: -

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MDMA900U1600PTEH

IXYS

BIPOLARMODULE-BRIDGE RECTIFIER E

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

패키지: -

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IXFM10N90

IXYS

MOSFET N-CH 900V 10A TO204AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3

패키지: -

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IXFT46N30T

IXYS

MOSFET N-CH 46A TO268

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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IXFT60N65X2HV

IXYS

MOSFET N-CH 650V 60A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

재고9

IXFK300N20X3

IXYS

MOSFET N-CH 200V 300A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

패키지: -

재고588

A1237NC280

IXYS

SCR 2.8KV 2555A W11

Voltage - Off State: 2.8 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 400 mA
Voltage - On State (Vtm) (Max): 2.7 V
Current - On State (It (AV)) (Max): 1237 A
Current - On State (It (RMS)) (Max): 2555 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: W11

패키지: -

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IXTH1918

IXYS

MOSFET N-CH TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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