IXYS 제품

IXGK400N30A3

IXYS

IGBT 300V 400A 1000W TO264AA

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 400A
• Current - Collector Pulsed (Icm): 1200A
• Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A
• Power - Max: 1000W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 560nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXGK)

패키지: TO-264-3, TO-264AA

IXA20RG1200DHGLB

IXYS

IGBT 1200V 32A 125W SMPD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 125W
• Switching Energy: 1.55mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 48nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 15A, 56 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 9-SMD Module
• Supplier Device Package: ISOPLUS-SMPD?.B

패키지: 9-SMD Module

IXGN100N120

IXYS

IGBT 160A 1200V SOT-227B

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

IXTY12N06TTRL

IXYS

MOSFET N-CH 60V 12A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IXTV280N055T

IXYS

MOSFET N-CH 55V 280A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 550W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

IXFV16N80PS

IXYS

MOSFET N-CH 800V 16A PLUS220-S

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PLUS-220SMD
• Package / Case: PLUS-220SMD

패키지: PLUS-220SMD

IXFK200N10P

IXYS

MOSFET N-CH 100V 200A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 830W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

IXFA4N85X

IXYS

MOSFET N-CH 850V 3.5A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 850V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXFA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXZR08N120B-00

IXYS

RF MOSFET N-CHANNEL PLUS247-3

• Transistor Type: N-Channel
• Frequency: 100MHz
• Gain: -
• Voltage - Test: -
• Current Rating: 1mA
• Noise Figure: -
• Current - Test: -
• Power - Output: 250W
• Voltage - Rated: 1200V
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

패키지: TO-247-3

GMM3X180-004X2-SMD

IXYS

MOSFET 6N-CH 40V 180A 24-SMD

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 180A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-SMD, Gull Wing
• Supplier Device Package: 24-SMD

패키지: 24-SMD, Gull Wing

DPG10I200PM

IXYS

DIODE GEN PURP 200V 10A TO220FP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220FP
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2 Full Pack, Isolated Tab

MDK600-22N1

IXYS

DIODE MODULE 2.2KV 883A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2200V
• Current - Average Rectified (Io) (per Diode): 883A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18µs
• Current - Reverse Leakage @ Vr: 50mA @ 2200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: Module

DSEC30-03A

IXYS

DIODE ARRAY GP 300V 15A TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.67V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 100µA @ 300V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

DPF240X200NA

IXYS

DIODE ARRAY 200V 120A SOT227B

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 120A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

VBO130-08NO7

IXYS

BRIDGE RECTIFIER SINGLE PHASE

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 122A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A
• Current - Reverse Leakage @ Vr: 200µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: PWS-E

패키지: Module

VUO82-14NO7

IXYS

RECT BRIDGE 3PH 88A 1400V PWS-D

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 88A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Supplier Device Package: PWS-D

패키지: PWS-D

IXDN504SIA

IXYS

IC GATE DRIVER DUAL 4A 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 9ns, 8ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

IXDD514PI

IXYS

IC GATE DRIVER 14A 8-DIP

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 1V, 2.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

IXA611M6

IXYS

IC DRIVER HALF BRDG 600MA 16-MLP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 35 V
• Logic Voltage - VIL, VIH: 6V, 7V
• Current - Peak Output (Source, Sink): 600mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 650V
• Rise / Fall Time (Typ): 23ns, 22ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-VDFN Exposed Pad
• Supplier Device Package: 16-MLP (7x6)

패키지: 16-VDFN Exposed Pad

IXDN404PI

IXYS

IC MOSFET DRIVER LS 4A DUAL 8DIP

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 16ns, 13ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

IXBOD1-12RD

IXYS

IC DIODE MODULE BOD 0.2A 1200V

• Voltage - Clamping: 1200V (1.2kV)
• Technology: Mixed Technology
• Number of Circuits: 2
• Number of Circuits: 2
• Applications: High Voltage
• Mounting Type: PCB, Through Hole
• Package / Case: Radial
• Supplier Device Package: BOD

패키지: Radial

DVRFM631DF12N100

IXYS

IXZ631DF12N100 DEV BOARD

• Type: MOSFET Driver
• Frequency: -
• For Use With/Related Products: IXZ631DF12N100
• Supplied Contents: Board

패키지: -

IX6611TR

IXYS

IC MOSF DRIVER

• Applications: Overvoltage, Undervoltage Protection
• Current - Supply: 3mA
• Voltage - Supply: 13 V ~ 25 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width) Exposed Pad

IXFR1871

IXYS

MOSFET N-CH18A ISOPLUS247

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

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MCNA120PD2200T-NMI

IXYS

MCNA120PD2200TB-NMI

• Structure: -
• Number of SCRs, Diodes: -
• Voltage - Off State: -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -

패키지: -

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IXYA30N120A4HV

IXYS

DISC IGBT XPT-GENX4 TO-263D2

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 106 A
• Current - Collector Pulsed (Icm): 184 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
• Power - Max: 500 W
• Switching Energy: 4mJ (on), 3.4mJ (off)
• Input Type: Standard
• Gate Charge: 57 nC
• Td (on/off) @ 25°C: 15ns/235ns
• Test Condition: 960V, 25A, 5Ohm, 15V
• Reverse Recovery Time (trr): 42 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV

패키지: -

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IXYK120N120B3

IXYS

DISC IGBT XPT-GENX3 TO-264(3)

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 320 A
• Current - Collector Pulsed (Icm): 800 A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
• Power - Max: 1500 W
• Switching Energy: 9.7mJ (on), 21.5mJ (off)
• Input Type: Standard
• Gate Charge: 400 nC
• Td (on/off) @ 25°C: 30ns/340ns
• Test Condition: 960V, 100A, 1Ohm, 15V
• Reverse Recovery Time (trr): 54 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 (IXYK)

패키지: -

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IXYH20N65B3

IXYS

DISC IGBT XPT-GENX3 TO-247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 58 A
• Current - Collector Pulsed (Icm): 108 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 230 W
• Switching Energy: 500µJ (on), 450µJ (off)
• Input Type: Standard
• Gate Charge: 29 nC
• Td (on/off) @ 25°C: 12ns/103ns
• Test Condition: 400V, 20A, 20Ohm, 15V
• Reverse Recovery Time (trr): 25 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: -

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