페이지 71 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXSK50N60BU1	IXYS	IGBT 600V 75A 300W TO264 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: 300W Switching Energy: 3.3mJ (off) Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25°C: 70ns/150ns Test Condition: 480V, 50A, 2.7 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264AA(IXSK)	패키지: TO-264-3, TO-264AA	재고6,880
VDI25-06P1	IXYS	MOD IGBT BUCK 600V ECO-PAC2 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24.5A Power - Max: 82W Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A Current - Collector Cutoff (Max): 600µA Input Capacitance (Cies) @ Vce: 8nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고3,168
IXUN280N10	IXYS	MOSFET N-CH 100V 280A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 280A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 440nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 770W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고5,168
IXTH152N085T	IXYS	MOSFET N-CH 85V 152A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 152A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: TO-247-3	재고6,976
IXTV26N60P	IXYS	MOSFET N-CH 600V 26A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	패키지: TO-220-3, Short Tab	재고5,712
IXFB100N50Q3	IXYS	MOSFET N-CH 500V 100A PLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1560W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264? Package / Case: TO-264-3, TO-264AA	패키지: TO-264-3, TO-264AA	재고6,256
IXTV72N30T	IXYS	MOSFET N-CH 300V 72A PLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS220 Package / Case: TO-220-3, Short Tab	패키지: TO-220-3, Short Tab	재고6,752
IXTA110N055P	IXYS	MOSFET N-CH 55V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,408
IXTA12N65X2	IXYS	MOSFET N-CH 650V 12A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고5,424
IXFP22N60P3	IXYS	MOSFET N-CH 600V 22A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고6,448
LKK47-06C5	IXYS	MOSFET 2N-CH 600V 47A ISOPLUS264 FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS264? Supplier Device Package: ISOPLUS264?	패키지: ISOPLUS264?	재고3,200
MCD224-20IO1	IXYS	MOD THYRISTOR/DIODE 2000V Y1-CU Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 2000V Current - On State (It (AV)) (Max): 240A Current - On State (It (RMS)) (Max): 400A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Y1-CU	패키지: Y1-CU	재고4,320
MCMA140P1400TA	IXYS	MOD THYRISTOR DUAL 14KV TO-240 Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1400V Current - On State (It (AV)) (Max): 140A Current - On State (It (RMS)) (Max): 220A Voltage - Gate Trigger (Vgt) (Max): 1.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-240AA	패키지: TO-240AA	재고3,072
DGS20-018A	IXYS	DIODE SCHOTTKY 180V 23A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io): 23A Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 180V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고6,416
DSI17-12A	IXYS	DIODE AVALANCHE 1.2KV 25A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-203AA, DO-4, Stud	재고7,600
DSS16-01A	IXYS	DIODE SCHOTTKY 100V 16A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 790mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고18,240
MDD255-22N1	IXYS	DIODE MODULE 2.2KV 270A Y1-CU Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io) (per Diode): 270A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30mA @ 2200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y1-CU Supplier Device Package: Y1-CU	패키지: Y1-CU	재고5,664
VUC36-14GO2	IXYS	DIODE BRIDGE FAST 1400V KAMM-MOD Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 34A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A Current - Reverse Leakage @ Vr: 5mA @ 1400V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: KAMM Supplier Device Package: KAMM	패키지: KAMM	재고3,616
VUO25-16NO8	IXYS	RECT BRIDGE 3PH 25A 1600V FO-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 5-Square, FO-B Supplier Device Package: PWS-E1	패키지: 5-Square, FO-B	재고4,272
LDS8724	IXYS	IC LED DRVR RGLTR DIM 1.9A 8TDFN Type: DC DC Regulator Topology: Step-Up (Boost) Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V Voltage - Output: - Current - Output / Channel: 1.9A (Switch) Frequency: 1MHz Dimming: PWM Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	패키지: 8-WFDFN Exposed Pad	재고34,914
LDS8160-002-T2	IXYS	IC LED DRVR LIN DIM 25MA 16TQFN Type: Linear Topology: - Internal Switch(s): Yes Number of Outputs: 6 Voltage - Supply (Min): 2.3V Voltage - Supply (Max): 5.5V Voltage - Output: - Current - Output / Channel: 25mA Frequency: 1.2MHz Dimming: PWM Applications: Backlight Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 16-WFQFN Exposed Pad Supplier Device Package: 16-TQFN (3x3)	패키지: 16-WFQFN Exposed Pad	재고19,926
SLMD121H10L	IXYS	MONO SOLAR CELL 42MM X 35MM Power (Watts) - Max: 223mW Current @ Pmpp: 44.6mA Voltage @ Pmpp: 5.01V Current Short Circuit (Isc): 50mA Type: Monocrystalline Voltage - Open Circuit: 6.3V Operating Temperature: - Package / Case: Cell (10) Size / Dimension: 1.378" L x 1.654" W x 0.079" H (35.00mm x 42.00mm x 2.00mm)	패키지: Cell (10)	재고12,288
IXFM1766	IXYS	POWER MOSFET TO-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
IXFQ80N25X3	IXYS	MOSFET N-CH 250V 80A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	패키지: -	Request a Quote
DSEP15-06BS-TUB	IXYS	DIODE GEN PURP 600V 15A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: 12pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote
DMA40U1800GU	IXYS	POWER DIODE DISCRETES-RECTIFIER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1800 V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 5-SIP Supplier Device Package: GUFP	패키지: -	재고402
IXTA3N120-TRR	IXYS	MOSFET N-CH 1200V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote
DSP45-12AZ-TRL	IXYS	DIODE ARRAY GP 1200V 45A TO268AA Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 45A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA (D3Pak-HV)	패키지: -	Request a Quote

IXSK50N60BU1

IXYS

IGBT 600V 75A 300W TO264

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: 300W
Switching Energy: 3.3mJ (off)
Input Type: Standard
Gate Charge: 167nC
Td (on/off) @ 25°C: 70ns/150ns
Test Condition: 480V, 50A, 2.7 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA(IXSK)

패키지: TO-264-3, TO-264AA

재고6,880

VDI25-06P1

IXYS

MOD IGBT BUCK 600V ECO-PAC2

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 24.5A
Power - Max: 82W
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Current - Collector Cutoff (Max): 600µA
Input Capacitance (Cies) @ Vce: 8nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고3,168

IXUN280N10

IXYS

MOSFET N-CH 100V 280A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 280A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 440nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 770W (Tc)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 140A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고5,168

IXTH152N085T

IXYS

MOSFET N-CH 85V 152A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 85V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: TO-247-3

재고6,976

IXTV26N60P

IXYS

MOSFET N-CH 600V 26A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고5,712

IXFB100N50Q3

IXYS

MOSFET N-CH 500V 100A PLUS264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1560W (Tc)
Rds On (Max) @ Id, Vgs: 49 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS264?
Package / Case: TO-264-3, TO-264AA

패키지: TO-264-3, TO-264AA

재고6,256

IXTV72N30T

IXYS

MOSFET N-CH 300V 72A PLUS220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab

패키지: TO-220-3, Short Tab

재고6,752

IXTA110N055P

IXYS

MOSFET N-CH 55V 110A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 500mA, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,408

IXTA12N65X2

IXYS

MOSFET N-CH 650V 12A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고5,424

IXFP22N60P3

IXYS

MOSFET N-CH 600V 22A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고6,448

LKK47-06C5

IXYS

MOSFET 2N-CH 600V 47A ISOPLUS264

FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 47A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS264?
Supplier Device Package: ISOPLUS264?

패키지: ISOPLUS264?

재고3,200

MCD224-20IO1

IXYS

MOD THYRISTOR/DIODE 2000V Y1-CU

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 2000V
Current - On State (It (AV)) (Max): 240A
Current - On State (It (RMS)) (Max): 400A
Voltage - Gate Trigger (Vgt) (Max): 2V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y1-CU

패키지: Y1-CU

재고4,320

MCMA140P1400TA

IXYS

MOD THYRISTOR DUAL 14KV TO-240

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1400V
Current - On State (It (AV)) (Max): 140A
Current - On State (It (RMS)) (Max): 220A
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-240AA

패키지: TO-240AA

재고3,072

DGS20-018A

IXYS

DIODE SCHOTTKY 180V 23A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io): 23A
Voltage - Forward (Vf) (Max) @ If: 1V @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 180V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고6,416

DSI17-12A

IXYS

DIODE AVALANCHE 1.2KV 25A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-203AA, DO-4, Stud

재고7,600

DSS16-01A

IXYS

DIODE SCHOTTKY 100V 16A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고18,240

MDD255-22N1

IXYS

DIODE MODULE 2.2KV 270A Y1-CU

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io) (per Diode): 270A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 600A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30mA @ 2200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Supplier Device Package: Y1-CU

패키지: Y1-CU

재고5,664

VUC36-14GO2

IXYS

DIODE BRIDGE FAST 1400V KAMM-MOD

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 34A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
Current - Reverse Leakage @ Vr: 5mA @ 1400V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: KAMM
Supplier Device Package: KAMM

패키지: KAMM

재고3,616

VUO25-16NO8

IXYS

RECT BRIDGE 3PH 25A 1600V FO-B

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 5-Square, FO-B
Supplier Device Package: PWS-E1

패키지: 5-Square, FO-B

재고4,272

LDS8724

IXYS

IC LED DRVR RGLTR DIM 1.9A 8TDFN

Type: DC DC Regulator
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Voltage - Output: -
Current - Output / Channel: 1.9A (Switch)
Frequency: 1MHz
Dimming: PWM
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

패키지: 8-WFDFN Exposed Pad

재고34,914

LDS8160-002-T2

IXYS

IC LED DRVR LIN DIM 25MA 16TQFN

Type: Linear
Topology: -
Internal Switch(s): Yes
Number of Outputs: 6
Voltage - Supply (Min): 2.3V
Voltage - Supply (Max): 5.5V
Voltage - Output: -
Current - Output / Channel: 25mA
Frequency: 1.2MHz
Dimming: PWM
Applications: Backlight
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN Exposed Pad
Supplier Device Package: 16-TQFN (3x3)

패키지: 16-WFQFN Exposed Pad

재고19,926

SLMD121H10L

IXYS

MONO SOLAR CELL 42MM X 35MM

Power (Watts) - Max: 223mW
Current @ Pmpp: 44.6mA
Voltage @ Pmpp: 5.01V
Current Short Circuit (Isc): 50mA
Type: Monocrystalline
Voltage - Open Circuit: 6.3V
Operating Temperature: -
Package / Case: Cell (10)
Size / Dimension: 1.378" L x 1.654" W x 0.079" H (35.00mm x 42.00mm x 2.00mm)

패키지: Cell (10)

재고12,288

IXFM1766

IXYS

POWER MOSFET TO-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

IXFQ80N25X3

IXYS

MOSFET N-CH 250V 80A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

패키지: -

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DSEP15-06BS-TUB

IXYS

DIODE GEN PURP 600V 15A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

DMA40U1800GU

IXYS

POWER DIODE DISCRETES-RECTIFIER

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 5-SIP
Supplier Device Package: GUFP

패키지: -

재고402

IXTA3N120-TRR

IXYS

MOSFET N-CH 1200V 3A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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DSP45-12AZ-TRL

IXYS

DIODE ARRAY GP 1200V 45A TO268AA

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io) (per Diode): 45A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA (D3Pak-HV)

패키지: -

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