페이지 96 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXYA8N90C3D1	IXYS	IGBT 900V 20A 125W C3 TO-263AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Power - Max: 125W Switching Energy: 460µJ (on), 180µJ (off) Input Type: Standard Gate Charge: 13.3nC Td (on/off) @ 25°C: 16ns/40ns Test Condition: 450V, 8A, 30 Ohm, 15V Reverse Recovery Time (trr): 114ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,056
MWI200-06A8T	IXYS	IGBT SIXPACK 225A 600V E3PACK IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 225A Power - Max: 675W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A Current - Collector Cutoff (Max): 1.8mA Input Capacitance (Cies) @ Vce: 9nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	패키지: E3	재고2,848
MUBW75-12T8	IXYS	MODULE IGBT CBI E3 IGBT Type: Trench Configuration: Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 110A Power - Max: 355W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 5.35nF @ 25V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: E3 Supplier Device Package: E3	패키지: E3	재고7,792
IXDN75N120	IXYS	IGBT 1200V 150A SOT-227B IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 660W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 5.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고5,568
IXTF280N055T	IXYS	MOSFET N-CH 55V 160A ISOPLUS I4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC? Package / Case: i4-Pac?-5	패키지: i4-Pac?-5	재고2,784
IXFN90N30	IXYS	MOSFET N-CH 300V 90A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 90A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	패키지: SOT-227-4, miniBLOC	재고6,448
IXTH72N30T	IXYS	MOSFET N-CH 300V 72A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: TO-247-3	재고7,904
IXZR16N60	IXYS	RF MOSFET N-CHANNEL PLUS247-3 Transistor Type: N-Channel Frequency: - Gain: - Voltage - Test: - Current Rating: 1mA Noise Figure: - Current - Test: - Power - Output: 350W Voltage - Rated: 600V Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고6,852
GWM220-004P3-SL	IXYS	MOSFET 6N-CH 40V 180A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	패키지: 17-SMD, Flat Leads	재고3,568
DSEE55-24N1F	IXYS	DIODE ARRAY GP 1200V 60A I4PAC Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 2.45V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 220ns Current - Reverse Leakage @ Vr: 1mA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: i4-Pac?-3 Supplier Device Package: i4-PAC?	패키지: i4-Pac?-3	재고6,672
GBO25-12NO1	IXYS	RECT BRIDGE 1PH 1200V SIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 50µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBO Supplier Device Package: 4-SIP	패키지: 4-SIP, GBO	재고2,864
FBO16-12N	IXYS	DIODE BRIDGE 1PHASE I4-PAC-5 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 22A Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A Current - Reverse Leakage @ Vr: 10µA @ 1200V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5	재고2,992
VBE60-06A	IXYS	DIODE BRIDGE FAST DIODE SOT-227B Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A Current - Reverse Leakage @ Vr: 150µA @ 600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고6,960
IXDI430CI	IXYS	IC DRVR MOSF/IGBT 30A TO220-5 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 8.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 30A, 30A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 18ns, 16ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Supplier Device Package: TO-220-5	패키지: TO-220-5	재고7,456
IXDD404SIA-16	IXYS	IC MOSFET DRVR DUAL 4A 16-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 16ns, 13ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고70,728
IXDF502PI	IXYS	IC MOSF DRIVER FAST DUAL 8-DIP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 7.5ns, 6.5ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고19,944
IXDN404SI-16	IXYS	IC MOSFET DRVR LS 4A DUAL 16SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 16ns, 13ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고74,592
IXBOD1-13RD	IXYS	IC DIODE MODULE BOD 0.2A 1300V Voltage - Clamping: 1300V (1.3kV) Technology: Mixed Technology Number of Circuits: 2 Number of Circuits: 2 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	패키지: Radial	재고4,518
IXTH20N65X2	IXYS	MOSFET N-CH 650V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	패키지: -	재고717
CLA30MT1200NPZ-TUB	IXYS	TRIAC 1.2KV 33A TO263HV Triac Type: Standard Voltage - Off State: 1.2 kV Current - On State (It (RMS)) (Max): 33 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A Current - Gate Trigger (Igt) (Max): 40 mA Current - Hold (Ih) (Max): 50 mA Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV	패키지: -	Request a Quote
ITF38IF1200HJ	IXYS	DISC IGBT XPT-GENX4 TO-247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
MDMA210P1600YD	IXYS	DIODE MODULE GP 1600V 210A Y4-M6 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io) (per Diode): 210A Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 210 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 1600 V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Y4-M6 Supplier Device Package: Y4-M6	패키지: -	재고30
MDMA450UB1600P-PC	IXYS	MDMA450UB1600PTED-PC Diode Type: Three Phase (Braking) Technology: Standard Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 250 A Voltage - Forward (Vf) (Max) @ If: 1.81 V @ 450 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Operating Temperature: - Mounting Type: Chassis Mount Package / Case: E2 Supplier Device Package: E2	패키지: -	Request a Quote
IXFK140N60X3	IXYS	DISCRETE MOSFET 140A 600V X3 TO2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
N3165HA280	IXYS	SCR 2.8KV 6230A W79 Voltage - Off State: 2.8 kV Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.3 V Current - On State (It (AV)) (Max): 3165 A Current - On State (It (RMS)) (Max): 6230 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: TO-200AF Supplier Device Package: W79	패키지: -	Request a Quote
IXTA10P50P-TRL	IXYS	MOSFET P-CH 500V 10A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	재고652,119
IXTA200N055T2-TRL	IXYS	MOSFET N-CH 55V 200A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote
IXFY30N25X3	IXYS	MOSFET N-CH 250V 30A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고19,077

IXYA8N90C3D1

IXYS

IGBT 900V 20A 125W C3 TO-263AA

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Power - Max: 125W
Switching Energy: 460µJ (on), 180µJ (off)
Input Type: Standard
Gate Charge: 13.3nC
Td (on/off) @ 25°C: 16ns/40ns
Test Condition: 450V, 8A, 30 Ohm, 15V
Reverse Recovery Time (trr): 114ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,056

MWI200-06A8T

IXYS

IGBT SIXPACK 225A 600V E3PACK

IGBT Type: NPT
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 225A
Power - Max: 675W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
Current - Collector Cutoff (Max): 1.8mA
Input Capacitance (Cies) @ Vce: 9nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

패키지: E3

재고2,848

MUBW75-12T8

IXYS

MODULE IGBT CBI E3

IGBT Type: Trench
Configuration: Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 110A
Power - Max: 355W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 5.35nF @ 25V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: E3
Supplier Device Package: E3

패키지: E3

재고7,792

IXDN75N120

IXYS

IGBT 1200V 150A SOT-227B

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 660W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고5,568

IXTF280N055T

IXYS

MOSFET N-CH 55V 160A ISOPLUS I4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS i4-PAC?
Package / Case: i4-Pac?-5

패키지: i4-Pac?-5

재고2,784

IXFN90N30

IXYS

MOSFET N-CH 300V 90A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 90A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 560W (Tc)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

패키지: SOT-227-4, miniBLOC

재고6,448

IXTH72N30T

IXYS

MOSFET N-CH 300V 72A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: TO-247-3

재고7,904

IXZR16N60

IXYS

RF MOSFET N-CHANNEL PLUS247-3

Transistor Type: N-Channel
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: 1mA
Noise Figure: -
Current - Test: -
Power - Output: 350W
Voltage - Rated: 600V
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고6,852

GWM220-004P3-SL

IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

패키지: 17-SMD, Flat Leads

재고3,568

DSEE55-24N1F

IXYS

DIODE ARRAY GP 1200V 60A I4PAC

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 2.45V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: i4-Pac?-3
Supplier Device Package: i4-PAC?

패키지: i4-Pac?-3

재고6,672

GBO25-12NO1

IXYS

RECT BRIDGE 1PH 1200V SIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBO
Supplier Device Package: 4-SIP

패키지: 4-SIP, GBO

재고2,864

FBO16-12N

IXYS

DIODE BRIDGE 1PHASE I4-PAC-5

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 22A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5

재고2,992

VBE60-06A

IXYS

DIODE BRIDGE FAST DIODE SOT-227B

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
Current - Reverse Leakage @ Vr: 150µA @ 600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고6,960

IXDI430CI

IXYS

IC DRVR MOSF/IGBT 30A TO220-5

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 8.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 18ns, 16ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Supplier Device Package: TO-220-5

패키지: TO-220-5

재고7,456

IXDD404SIA-16

IXYS

IC MOSFET DRVR DUAL 4A 16-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 16ns, 13ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고70,728

IXDF502PI

IXYS

IC MOSF DRIVER FAST DUAL 8-DIP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고19,944

IXDN404SI-16

IXYS

IC MOSFET DRVR LS 4A DUAL 16SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 16ns, 13ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고74,592

IXBOD1-13RD

IXYS

IC DIODE MODULE BOD 0.2A 1300V

Voltage - Clamping: 1300V (1.3kV)
Technology: Mixed Technology
Number of Circuits: 2
Number of Circuits: 2
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

패키지: Radial

재고4,518

IXTH20N65X2

IXYS

MOSFET N-CH 650V 20A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

패키지: -

재고717

CLA30MT1200NPZ-TUB

IXYS

TRIAC 1.2KV 33A TO263HV

Triac Type: Standard
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Hold (Ih) (Max): 50 mA
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263HV

패키지: -

Request a Quote

ITF38IF1200HJ

IXYS

DISC IGBT XPT-GENX4 TO-247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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MDMA210P1600YD

IXYS

DIODE MODULE GP 1600V 210A Y4-M6

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io) (per Diode): 210A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 210 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6

패키지: -

재고30

MDMA450UB1600P-PC

IXYS

MDMA450UB1600PTED-PC

Diode Type: Three Phase (Braking)
Technology: Standard
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 250 A
Voltage - Forward (Vf) (Max) @ If: 1.81 V @ 450 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: E2
Supplier Device Package: E2

패키지: -

Request a Quote

IXFK140N60X3

IXYS

DISCRETE MOSFET 140A 600V X3 TO2

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

N3165HA280

IXYS

SCR 2.8KV 6230A W79

Voltage - Off State: 2.8 kV
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 1.3 V
Current - On State (It (AV)) (Max): 3165 A
Current - On State (It (RMS)) (Max): 6230 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Supplier Device Package: W79

패키지: -

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IXTA10P50P-TRL

IXYS

MOSFET P-CH 500V 10A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

재고652,119

IXTA200N055T2-TRL

IXYS

MOSFET N-CH 55V 200A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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IXFY30N25X3

IXYS

MOSFET N-CH 250V 30A TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고19,077