페이지 19 - Maxim Integrated 제품 - 메모리 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-802
Language Translation

* Please refer to the English Version as our Official Version.

Maxim Integrated 제품 - 메모리

기록 607
페이지  19/22
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DS3045W-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고5,856
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS3030W-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고4,896
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2070W-100#
Maxim Integrated

IC NVSRAM 16MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고2,112
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (2M x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2065W-100#
Maxim Integrated

IC NVSRAM 8MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고5,536
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2050W-100#
Maxim Integrated

IC NVSRAM 4MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,808
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045Y-70#
Maxim Integrated

IC NVSRAM 1MBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고3,904
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045Y-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고2,560
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045W-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,632
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045L-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고6,240
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045AB-70#
Maxim Integrated

IC NVSRAM 1MBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고3,200
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2045AB-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,776
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030Y-70#
Maxim Integrated

IC NVSRAM 256KBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고6,112
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030Y-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,360
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030W-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,952
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030L-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고4,240
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030AB-70#
Maxim Integrated

IC NVSRAM 256KBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고7,488
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030AB-100#
Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고2,896
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS3070W-100#
Maxim Integrated

IC NVSRAM 16MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고6,176
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (2M x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS3065W-100#
Maxim Integrated

IC NVSRAM 8MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
패키지: 256-BGA
재고5,344
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS25LV02R+T&R
Maxim Integrated

IC OTP 1KBIT 1WIRE SOT23-5

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Kb (1K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 15µs
  • Voltage - Supply: 2.2 V ~ 5.5 V
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-23-5
패키지: SOT-23-5 Thin, TSOT-23-5
재고5,696
EPROM
EPROM - OTP
1Kb (1K x 1)
1-Wire?
-
-
15µs
2.2 V ~ 5.5 V
-30°C ~ 85°C (TA)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-23-5
hot DS2506S+
Maxim Integrated

IC OTP 64KBIT 1WIRE 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 64Kb (64K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.209", 5.30mm Width)
재고4,896
EPROM
EPROM - OTP
64Kb (64K x 1)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SO
DS2433+
Maxim Integrated

IC EEPROM 4KBIT 1WIRE TO92-3

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 Long Body
재고4,336
EEPROM
EEPROM
4Kb (256 x 16)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92-3
DS2423P+T&R
Maxim Integrated

IC SRAM 4KBIT 6TSOC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 4Kb (256 x 16 pages)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-LSOJ (0.148", 3.76mm Width)
  • Supplier Device Package: 6-TSOC
패키지: 6-LSOJ (0.148", 3.76mm Width)
재고7,776
SRAM
SRAM
4Kb (256 x 16 pages)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
6-LSOJ (0.148", 3.76mm Width)
6-TSOC
DS2016R-100+
Maxim Integrated

IC SRAM 16KBIT 100NS 24SOIC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 24-SOIC
패키지: 24-SOIC (0.295", 7.50mm Width)
재고4,320
SRAM
SRAM
16Kb (2K x 8)
Parallel
-
100ns
100ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
24-SOIC (0.295", 7.50mm Width)
24-SOIC
DS1609-50+
Maxim Integrated

IC SRAM 2KBIT 50NS 24DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50ns
  • Access Time: 50ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP (0.600", 15.24mm)
  • Supplier Device Package: 24-PDIP
패키지: 24-DIP (0.600", 15.24mm)
재고2,960
SRAM
SRAM - Dual Port, Asynchronous
2Kb (256 x 8)
Parallel
-
50ns
50ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
24-DIP (0.600", 15.24mm)
24-PDIP
DS1350YP-100+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
패키지: 34-PowerCap? Module
재고3,664
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS1330ABP-100+
Maxim Integrated

IC NVSRAM 256KBIT 100NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
패키지: 34-PowerCap? Module
재고3,104
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS1220Y-200IND+
Maxim Integrated

IC NVSRAM 16KBIT 200NS 24EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200ns
  • Access Time: 200ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 24-EDIP
패키지: 24-DIP Module (0.600", 15.24mm)
재고5,328
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Kb (2K x 8)
Parallel
-
200ns
200ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
24-DIP Module (0.600", 15.24mm)
24-EDIP