페이지 7 - Maxim Integrated 제품 - 메모리 | Heisener Electronics
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Maxim Integrated 제품 - 메모리

기록 607
페이지  7/22
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot DS2431G+T&R
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 2SFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 2-SFN
  • Supplier Device Package: 2-SFN (6x6)
패키지: 2-SFN
재고4,272
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
2-SFN
2-SFN (6x6)
hot DS2431GA+T&R
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 2SFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 2-WFDFN
  • Supplier Device Package: 2-SFN (3.5mmx6.5mm)
패키지: 2-WFDFN
재고4,128
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
2-WFDFN
2-SFN (3.5mmx6.5mm)
DS28E07Q+T
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 3 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN (3x3)
패키지: 6-WDFN Exposed Pad
재고3,008
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
3 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN (3x3)
DS28E07P+
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6TSOC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 3 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-LSOJ (0.148", 3.76mm Width)
  • Supplier Device Package: 6-TSOC
패키지: 6-LSOJ (0.148", 3.76mm Width)
재고7,136
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
3 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
6-LSOJ (0.148", 3.76mm Width)
6-TSOC
hot DS28E10R+T
Maxim Integrated

1-W PROTECT 192B EPROM W/SHA1,SO

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 224b (28 x 8)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고336,000
EPROM
EPROM - OTP
224b (28 x 8)
1-Wire?
-
-
-
2.8 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
DS28E07P+T
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6TSOC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 3 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-LSOJ (0.148", 3.76mm Width)
  • Supplier Device Package: 6-TSOC
패키지: 6-LSOJ (0.148", 3.76mm Width)
재고4,848
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
3 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
6-LSOJ (0.148", 3.76mm Width)
6-TSOC
DS28E07+T
Maxim Integrated

IC EEPROM 1KBIT 1WIRE TO92

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 3 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고7,504
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
3 V ~ 5.25 V
-40°C ~ 85°C (TA)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
DS28E05GB+T
Maxim Integrated

IC EEPROM 896BIT 1WIRE 2SFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 896b (112 x 8)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: 2-SFN (3.5x5)
패키지: 2-XDFN
재고5,856
EEPROM
EEPROM
896b (112 x 8)
1-Wire?
-
-
2µs
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
2-XDFN
2-SFN (3.5x5)
DS28E05P+T
Maxim Integrated

IC EEPROM 896BIT 1WIRE 6TSOC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 896b (112 x 8)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-LSOJ (0.148", 3.76mm Width)
  • Supplier Device Package: 6-TSOC
패키지: 6-LSOJ (0.148", 3.76mm Width)
재고5,520
EEPROM
EEPROM
896b (112 x 8)
1-Wire?
-
-
2µs
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
6-LSOJ (0.148", 3.76mm Width)
6-TSOC
hot DS1225AB-70IND+
Maxim Integrated

IC NVSRAM 64KBIT 70NS 28EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-EDIP
패키지: 28-DIP Module (0.600", 15.24mm)
재고5,888
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-EDIP
hot DS1220AB-150+
Maxim Integrated

IC NVSRAM 16KBIT 150NS 24EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 24-EDIP
패키지: 24-DIP Module (0.600", 15.24mm)
재고4,096
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Kb (2K x 8)
Parallel
-
150ns
150ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
24-DIP Module (0.600", 15.24mm)
24-EDIP
DS2502G+U
Maxim Integrated

IC OTP 1KBIT 1WIRE 2SFN

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Kb (1K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 15µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 2-SFN
  • Supplier Device Package: 2-SFN (6x6)
패키지: 2-SFN
재고4,368
EPROM
EPROM - OTP
1Kb (1K x 1)
1-Wire?
-
-
15µs
-
-40°C ~ 85°C (TA)
Surface Mount
2-SFN
2-SFN (6x6)
DS2431G+U
Maxim Integrated

IC EEPROM 1KBIT 1WIRE 2SFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (256 x 4)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 2-SFN
  • Supplier Device Package: 2-SFN (6x6)
패키지: 2-SFN
재고18,264
EEPROM
EEPROM
1Kb (256 x 4)
1-Wire?
-
-
2µs
-
-40°C ~ 85°C (TA)
Surface Mount
2-SFN
2-SFN (6x6)
DS28E15Q+U
Maxim Integrated

IC EEPROM 512BIT 1WIRE 6DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512b (512 x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 2.97 V ~ 3.63 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
패키지: 6-WDFN Exposed Pad
재고7,328
EEPROM
EEPROM
512b (512 x 1)
1-Wire?
-
-
2µs
2.97 V ~ 3.63 V
-40°C ~ 85°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
DS1265AB-70IND+
Maxim Integrated

IC NVSRAM 8MBIT 70NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
패키지: 36-DIP Module (0.600", 15.24mm)
재고7,408
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
DS1265W-150+
Maxim Integrated

IC NVSRAM 8MBIT 150NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
패키지: 36-DIP Module (0.600", 15.24mm)
재고6,080
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
DS1265AB-100+
Maxim Integrated

IC NVSRAM 8MBIT 100NS 36EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 36-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 36-EDIP
패키지: 36-DIP Module (0.600", 15.24mm)
재고6,688
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (1M x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
36-DIP Module (0.600", 15.24mm)
36-EDIP
DS1250WP-100IND+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
패키지: 34-PowerCap? Module
재고7,712
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS1250Y-100IND+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
패키지: 32-DIP Module (0.600", 15.24mm)
재고6,060
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
DS1350YP-70+
Maxim Integrated

IC NVSRAM 4MBIT 70NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
패키지: 34-PowerCap? Module
재고4,272
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS1350WP-100+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
패키지: 34-PowerCap? Module
재고7,424
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS1250AB-100IND+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
패키지: 32-DIP Module (0.600", 15.24mm)
재고6,672
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
DS1250AB-100+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
패키지: 32-DIP Module (0.600", 15.24mm)
재고5,440
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
DS1250W-100+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
패키지: 32-DIP Module (0.600", 15.24mm)
재고6,672
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
DS1245YP-70IND+
Maxim Integrated

IC NVSRAM 1MBIT 70NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
패키지: 34-PowerCap? Module
재고7,424
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS1245WP-100IND+
Maxim Integrated

IC NVSRAM 1MBIT 100NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
패키지: 34-PowerCap? Module
재고4,800
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS1245ABP-70+
Maxim Integrated

IC NVSRAM 1MBIT 70NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
패키지: 34-PowerCap? Module
재고7,888
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
DS1245AB-85+
Maxim Integrated

IC NVSRAM 1MBIT 85NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
패키지: 32-DIP Module (0.600", 15.24mm)
재고4,016
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
85ns
85ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP