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Maxim Integrated 제품 - PMIC - 게이트 구동기

기록 306
페이지  3/11
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MAX15025AATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 42ns, 30ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN (3x3)
패키지: 10-WFDFN Exposed Pad
재고5,888
Independent
2
N-Channel MOSFET
4.5 V ~ 28 V
0.8V, 2V
2A, 4A
Non-Inverting
-
42ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN (3x3)
hot MAX5048BAUT+T
Maxim Integrated

IC MOSFET DVR HIGH SPEED SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고1,502,772
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
0.8V, 2.4V
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX17491GTA+
Maxim Integrated

IC MOSFET DVR NOTEBOOK

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.2 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2.7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 24V
  • Rise / Fall Time (Typ): 10ns, 8ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WQFN Exposed Pad
  • Supplier Device Package: 8-TQFN (3x3)
패키지: 8-WQFN Exposed Pad
재고22,212
Synchronous
2
N-Channel MOSFET
4.2 V ~ 5.5 V
-
2A, 2.7A
Non-Inverting
24V
10ns, 8ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WQFN Exposed Pad
8-TQFN (3x3)
hot MAX15492GTA+T
Maxim Integrated

IC HALF-BRIDGE TDFN-8

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.2 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2.2A, 2.7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 30V
  • Rise / Fall Time (Typ): 14ns, 7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN-EP (2x2)
패키지: 8-WFDFN Exposed Pad
재고23,580
Synchronous
2
N-Channel MOSFET
4.2 V ~ 5.5 V
-
2.2A, 2.7A
Non-Inverting
30V
14ns, 7ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN-EP (2x2)
MAX17601ATA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (3x3)
패키지: 8-WDFN Exposed Pad
재고7,760
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN (3x3)
hot MAX15024AATB+T
Maxim Integrated

IC GATE DRVR 1CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 22ns, 16ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고12,432
Single
1
N-Channel MOSFET
4.5 V ~ 28 V
0.8V, 2V
4A, 8A
Inverting, Non-Inverting
-
22ns, 16ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
hot MAX5048CAUT+T
Maxim Integrated

IC MOSFET DRIVER HS SOT23

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 7A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 28ns, 13ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고17,832
Single
1
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2V
3A, 7A
Inverting, Non-Inverting
-
28ns, 13ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX5062BASA+
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,876
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5062CASA+
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고8,400
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX620CWN+
Maxim Integrated

IC DRVR MOSFET QUAD 18-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Independent
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16.5 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 1.7µs, 2.5µs
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOIC
패키지: 18-SOIC (0.295", 7.50mm Width)
재고7,404
Independent
4
N-Channel MOSFET
4.5 V ~ 16.5 V
0.8V, 2.4V
-
Non-Inverting
-
1.7µs, 2.5µs
0°C ~ 70°C (TA)
Surface Mount
18-SOIC (0.295", 7.50mm Width)
18-SOIC
hot MAX5048AATT+T
Maxim Integrated

IC MOSFET DRIVER 6-TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
패키지: 6-WDFN Exposed Pad
재고10,980
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
-
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
MAX15013DASA+
Maxim Integrated

IC HALF-BRIDGE MOSFET DVR 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 175V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,312
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
0.8V, 2V
2A, 2A
Inverting, Non-Inverting
175V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX15012DASA+
Maxim Integrated

IC HALF-BRIDGE MOSFET DVR 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 175V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,584
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
175V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MAX626ESA+
Maxim Integrated

IC DRIVER MOSFET DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 20ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,704
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
2A, 2A
Inverting
-
25ns, 20ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX17602ATA+
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (3x3)
패키지: 8-WDFN Exposed Pad
재고19,452
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN (3x3)
hot MAX5062AASA+T
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고179,628
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MAX15070AAUT+T
Maxim Integrated

IC MOSFET DRVR TTL SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 7A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 14ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고55,080
Single
1
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2V
3A, 7A
Inverting, Non-Inverting
-
25ns, 14ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX17605ATA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, SiC MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN-EP (3x3)
패키지: 8-WDFN Exposed Pad
재고24,366
Independent
2
IGBT, SiC MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Inverting, Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN-EP (3x3)
MAX17603ATA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN-EP (3x3)
패키지: 8-WDFN Exposed Pad
재고22,110
Independent
2
N-Channel MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN-EP (3x3)
MAX17600ATA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN-EP (3x3)
패키지: 8-WDFN Exposed Pad
재고25,938
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN-EP (3x3)
hot MAX4426MJA/883B
Maxim Integrated

IC MOSFET DRVR COTS

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 8-CERDIP
패키지: 8-CDIP (0.300", 7.62mm)
재고16,968
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
20ns, 20ns
-55°C ~ 125°C (TA)
Through Hole
8-CDIP (0.300", 7.62mm)
8-CERDIP
MAX5055BASA+
Maxim Integrated

IC MOSFET DRVR DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 15 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 32ns, 26ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,080
Independent
2
N-Channel MOSFET
4 V ~ 15 V
0.8V, 2.1V
4A, 4A
Inverting
-
32ns, 26ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5077AUD+
Maxim Integrated

IC DRVR FET P-P 14-TSSOP

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
  • Supplier Device Package: 14-TSSOP-EP
패키지: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
재고6,360
Synchronous
2
N-Channel MOSFET
4.5 V ~ 15 V
-
3A, 3A
RC Input Circuit
-
10ns, 10ns
-40°C ~ 150°C (TJ)
Surface Mount
14-TSSOP (0.173", 4.40mm Width) Exposed Pad
14-TSSOP-EP
hot MAX4429EPA+
Maxim Integrated

IC MOSFET DRV SGL 6A HS 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고21,600
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
MAX15018AASA+
Maxim Integrated

IC MOSF DRVR HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 50ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,072
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
3A, 3A
Non-Inverting
125V
50ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot MAX4428CPA+
Maxim Integrated

IC MOSFET DRVR INV/NONINV 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고96,000
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting, Non-Inverting
-
20ns, 20ns
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
MAX4426CSA+
Maxim Integrated

IC MOSFET DRVR DUAL INV 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,192
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
20ns, 20ns
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ICL7667EBA+
Maxim Integrated

IC MOSFET DVR DUAL PWR 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 17 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,504
Independent
2
N-Channel MOSFET
4.5 V ~ 17 V
0.8V, 2V
-
Inverting
-
20ns, 20ns
0°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC