Micro Commercial Co 제품

DL4754A-TP

Micro Commercial Co

DIODE ZENER 39V 1W MELF

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

패키지: DO-213AB, MELF

DL4732A-TP

Micro Commercial Co

DIODE ZENER 4.7V 1W MELF

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

패키지: DO-213AB, MELF

BZT52B2V7-TP

Micro Commercial Co

DIODE ZENER 2.7V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 83 Ohms
• Current - Reverse Leakage @ Vr: 75µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

SMBJ5378B-TP

Micro Commercial Co

DIODE ZENER 100V 5W DO214AA

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: DO-214AA, SMB

B0540WS-TP

Micro Commercial Co

DIODE SCHOTTKY 40V SOD323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 80µA @ 40V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-76, SOD-323

MMBD1504-TP

Micro Commercial Co

DIODE ARRAY GP 180V 200MA SOT23

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 180V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10nA @ 180V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

PB68-BP

Micro Commercial Co

RECTIFIER BRIDGE 6A 800V PB-6

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, PB-6
• Supplier Device Package: PB-6

패키지: 4-Square, PB-6

SMCJ1.5KE180CA-TP

Micro Commercial Co

TVS DIODE 246VC 6.2A DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 154V
• Voltage - Breakdown (Min): 171V
• Voltage - Clamping (Max) @ Ipp: 246V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

패키지: DO-214AB, SMC

5.0SMLJ24A-TP

Micro Commercial Co

TVS DIODE 24VWM 38.9VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 129A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

패키지: DO-214AB, SMC

MB356-BP

Micro Commercial Co

Interface

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 35 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: QC Terminal
• Package / Case: 4-Square, MB-35
• Supplier Device Package: MB-35

패키지: -

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SR506HL-BP

Micro Commercial Co

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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MCG08P06HE3-TP

Micro Commercial Co

Interface

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4304 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20.8W
• Rds On (Max) @ Id, Vgs: 28.4mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: DFN3333
• Package / Case: 8-VDFN Exposed Pad

패키지: -

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GBUA4M-BP

Micro Commercial Co

BRIDGE RECTIFIERS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

패키지: -

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EMD16-TP

Micro Commercial Co

BIPOLAR TRANSISTORS

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 200MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

패키지: -

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SR820-TP

Micro Commercial Co

SCHOTTKY DIODES

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 20 V
• Capacitance @ Vr, F: 380pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201AD (DO-27)
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

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BAS19HE3-TP

Micro Commercial Co

DIODE GEN PURP 100V 200MA SOT23

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 100 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

UMH13NHE3-TP

Micro Commercial Co

DIGITAL TRANSISTOR DUAL NPN 50V

• Transistor Type: 2 NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: -

BZT52B47JSHE3-TP

Micro Commercial Co

Interface

• Voltage - Zener (Nom) (Vz): 47 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 33 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: -

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HER108G-AP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

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BZT52B27S-TP

Micro Commercial Co

DIODE ZENER 27V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 27 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 20 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: -

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BD882HY-TP

Micro Commercial Co

Interface

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3 A
• Voltage - Collector Emitter Breakdown (Max): 70 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
• Power - Max: 500 mW
• Frequency - Transition: 50MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

패키지: -

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2SC1815-GR-BP

Micro Commercial Co

TRANS NPN 50V 0.15A TO92

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 400 mW
• Frequency - Transition: 80MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92

패키지: -

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BZT52B3V3LS-TP

Micro Commercial Co

Interface

• Voltage - Zener (Nom) (Vz): 3.3 V
• Tolerance: ±2.48%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 20 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323FL

패키지: -

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RL203GP-TP

Micro Commercial Co

DIODE GEN PURP 200V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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2SA1576A-S-AP

Micro Commercial Co

TRANS PNP 50V 0.15A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 1mA, 6V
• Power - Max: 200 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: -

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MCQD08N03A-TP

Micro Commercial Co

MOSFET 2N-CH 30V 8.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.5A
• Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
• Power - Max: 3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

SMBJ5360BHE3-TP

Micro Commercial Co

Interface

• Voltage - Zener (Nom) (Vz): 25 V
• Tolerance: ±5%
• Power - Max: 5 W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 19 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: -

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RL255M-AP

Micro Commercial Co

DIODE GEN PURP 600V 2.5A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 2.5A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 35pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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