페이지 13 - Micron Technology Inc. 제품 - 메모리 | Heisener Electronics
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Micron Technology Inc. 제품 - 메모리

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Technology
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Memory Interface
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Write Cycle Time - Word, Page
Access Time
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Operating Temperature
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Supplier Device Package
MT53D1024M32D4BD-046-WT-D-TR
Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gbit
  • Memory Interface: -
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
32Gbit
-
2.133 GHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT62F4G32D8DV-023-AAT-B-TR
Micron Technology Inc.

LPDDR5 128G 4GX32 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 128Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
128Gbit
Parallel
4.266 GHz
-
-
-
-40°C ~ 105°C
-
-
-
MT58L64L32DT-7-5
Micron Technology Inc.

IC SRAM 2MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 2Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - Standard
2Mbit
Parallel
133 MHz
-
4 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MT40A4G4SA-062E-F-TR
Micron Technology Inc.

IC DRAM 16GBIT PAR 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.5 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 19 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (7.5x11)
패키지: -
Request a Quote
DRAM
SDRAM - DDR4
16Gbit
Parallel
1.5 GHz
15ns
19 ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (7.5x11)
MT29F8T08GULBEM4-B-TR
Micron Technology Inc.

QLC 8T 1TX8 LBGA 8DP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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MT53E768M32D2FW-046-WT-ES-C
Micron Technology Inc.

LPDDR4 24GBIT 32 200/264 TFBGA 2

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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MT53E1G64D4HJ-046-AUT-C
Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-TFBGA
  • Supplier Device Package: 556-WFBGA (12.4x12.4)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
64Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 125°C (TC)
Surface Mount
556-TFBGA
556-WFBGA (12.4x12.4)
MT60B1G16HT-48B-AAT-A-TR
Micron Technology Inc.

DDR5 16G 1GX16VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR5
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.4 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-FBGA (11x18.5)
패키지: -
Request a Quote
DRAM
SDRAM - DDR5
16Gbit
Parallel
2.4 GHz
-
-
-
-40°C ~ 105°C
Surface Mount
144-TFBGA
144-FBGA (11x18.5)
MT55L256V18P1T
Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - ZBT
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - ZBT
4Mbit
Parallel
100 MHz
-
5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MT62F3G32D8DV-023-WT-C-TR
Micron Technology Inc.

LPDDR5 96GBIT 32 315/315 LFBGA 8

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5X
  • Memory Size: 96Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.01V ~ 1.12V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 315-LFBGA
  • Supplier Device Package: 315-LFBGA (12.4x15)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5X
96Gbit
LVSTL
4.266 GHz
-
-
1.01V ~ 1.12V
-25°C ~ 85°C (TC)
Surface Mount
315-LFBGA
315-LFBGA (12.4x15)
MT29F2T08EMHAFJ4-3R-A-TR
Micron Technology Inc.

IC FLASH 2TBIT PARALLEL 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 2Tbit
  • Memory Interface: Parallel
  • Clock Frequency: 333 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
패키지: -
Request a Quote
FLASH
FLASH - NAND (TLC)
2Tbit
Parallel
333 MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
132-VBGA
132-VBGA (12x18)
MT53E1G32D2FW-046-IT-C
Micron Technology Inc.

LPDDR4 32GBIT 32 200/264 TFBGA 2

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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MT53E1G32D2FW-046-IT-B
Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA DDP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 32Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
패키지: -
재고3,567
DRAM
SDRAM - Mobile LPDDR4X
32Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT53E1G32D2FW-046-IT-A
Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA DDP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 32Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: -
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
32Gbit
Parallel
2.133 GHz
18ns
-
1.06V ~ 1.17V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT62F1536M32D4DS-026-AAT-B-TR
Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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MT53E1G64D4NW-046-WT-C-TR
Micron Technology Inc.

IC MEMORY DRAM 64G 1GX64 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 432-VFBGA
  • Supplier Device Package: 432-VFBGA (15x15)
패키지: -
Request a Quote
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-
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-
Surface Mount
432-VFBGA
432-VFBGA (15x15)
MT29GZ6A6BPIET-046AAT-112
Micron Technology Inc.

NAND MCP 16GB

  • Memory Type: Non-Volatile, Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND (SLC), DRAM - LPDDR4
  • Memory Size: 8Gbit (NAND), 8Gbit (LPDDR4)
  • Memory Interface: ONFI
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 20ns, 30ns
  • Access Time: 25 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 149-VFBGA
  • Supplier Device Package: 149-VFBGA (8x9.5)
패키지: -
Request a Quote
FLASH, RAM
FLASH - NAND (SLC), DRAM - LPDDR4
8Gbit (NAND), 8Gbit (LPDDR4)
ONFI
2.133 GHz
20ns, 30ns
25 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
149-VFBGA
149-VFBGA (8x9.5)
M28W640HCT70N6F-TR
Micron Technology Inc.

IC FLASH 64MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: -
Request a Quote
FLASH
FLASH - NOR
64Mbit
Parallel
-
70ns
70 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT40A2G4SA-062E-PS-R
Micron Technology Inc.

IC DRAM 8GBIT PARALLEL 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 19 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (7.5x11)
패키지: -
Request a Quote
DRAM
SDRAM - DDR4
8Gbit
Parallel
1.6 GHz
15ns
19 ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (7.5x11)
MT62F768M64D4CZ-023-FAAT-C-TR
Micron Technology Inc.

LPDDR5 48GBIT 64 561/570 TFBGA 4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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MT53E1G64D4SP-046-WT-C-TR
Micron Technology Inc.

IC MEMORY DRAM 64G 1GX64 BGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
MT62F2G64D8AK-026-XT-C-TR
Micron Technology Inc.

LPDDR5 128GBIT 64 1159/2021 VFBG

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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MT29F2T08EMLEEJ4-R-E
Micron Technology Inc.

TLC 2T 256GX8 VBGA QDP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 2Tbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.6V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
패키지: -
Request a Quote
FLASH
FLASH - NAND (TLC)
2Tbit
Parallel
-
-
-
2.6V ~ 3.6V
0°C ~ 70°C
Surface Mount
132-VBGA
132-VBGA (12x18)
MT29F2T08EMLEEJ4-T-E
Micron Technology Inc.

TLC 2T 256GX8 VBGA QDP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 2Tbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.6V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
패키지: -
Request a Quote
FLASH
FLASH - NAND (TLC)
2Tbit
Parallel
-
-
-
2.6V ~ 3.6V
0°C ~ 70°C
Surface Mount
132-VBGA
132-VBGA (12x18)
MT29VZZZCDA1SKPR-046-W-181
Micron Technology Inc.

UMCP 2112G TFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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MT54V512H18EF-6C
Micron Technology Inc.

IC SRAM 9MBIT HSTL 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 9Mbit
  • Memory Interface: HSTL
  • Clock Frequency: 167 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.5 ns
  • Voltage - Supply: 2.4V ~ 2.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: -
Request a Quote
SRAM
SRAM - Quad Port, Synchronous
9Mbit
HSTL
167 MHz
-
2.5 ns
2.4V ~ 2.6V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
MT54V512H18EF-10
Micron Technology Inc.

IC SRAM 9MBIT PAR 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.4V ~ 2.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: -
Request a Quote
SRAM
SRAM - Quad Port, Synchronous
9Mbit
Parallel
100 MHz
-
-
2.4V ~ 2.6V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
MT58L64L36PT-5
Micron Technology Inc.

IC SRAM 2MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 2Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM
2Mbit
Parallel
200 MHz
-
3.5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)