페이지 330 - Micron Technology Inc. 제품 - 메모리 | Heisener Electronics
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Micron Technology Inc. 제품 - 메모리

기록 10,993
페이지  330/393
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29C1G12MAADVAMD-5 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고3,104
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAADVAMD-5 E IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고6,208
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAADAFAMD-6 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 2GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고6,144
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
Parallel
166MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAADAFAMD-6 E IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 2GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고7,056
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
Parallel
166MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAADAFAKD-6 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 2GBIT 137TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 137-TFBGA
  • Supplier Device Package: 137-TFBGA (10.5x13)
패키지: 137-TFBGA
재고3,696
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
Parallel
166MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
137-TFBGA
137-TFBGA (10.5x13)
MT29C1G12MAADAFAKD-6 E IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 2GBIT 137TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 137-TFBGA
  • Supplier Device Package: 137-TFBGA (10.5x13)
패키지: 137-TFBGA
재고7,072
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
Parallel
166MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
137-TFBGA
137-TFBGA (10.5x13)
MT29C1G12MAACYAMD-5 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고2,416
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAACYAKD-5 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 137TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 137-TFBGA
  • Supplier Device Package: 137-TFBGA (10.5x13)
패키지: 137-TFBGA
재고4,400
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
137-TFBGA
137-TFBGA (10.5x13)
MT29C1G12MAACVAMD-5 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 512Mb (32M x 16)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고4,272
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512Mb (32M x 16)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAACVAMD-5 E IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고6,016
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAACAFAMD-6 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고5,728
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
Parallel
166MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
MT29C1G12MAACAFAKD-6 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 137TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 137-TFBGA
  • Supplier Device Package: 137-TFBGA (10.5x13)
패키지: 137-TFBGA
재고2,384
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
Parallel
166MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
137-TFBGA
137-TFBGA (10.5x13)
MT29C1G12MAACAEAMD-6 IT TR
Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 1Gb (128M x 8)(NAND), 512Mb (32M x 16)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 130-VFBGA
  • Supplier Device Package: 130-VFBGA (8x9)
패키지: 130-VFBGA
재고3,728
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
1Gb (128M x 8)(NAND), 512Mb (32M x 16)(LPDRAM)
Parallel
166MHz
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
130-VFBGA
130-VFBGA (8x9)
hot MT41K256M16HA-125:E
Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.75ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고472,092
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
800MHz
-
13.75ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
MT41K256M16HA-125 M:E
Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.75ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고3,296
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
800MHz
-
13.75ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
MT41K256M16HA-125 M AIT:E
Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.75ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고7,152
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
800MHz
-
13.75ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
hot MT41K256M16HA-125 IT:E
Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.75ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고10,200
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
800MHz
-
13.75ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
hot MT41K256M16HA-125 AIT:E
Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.75ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고6,736
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
800MHz
-
13.75ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
hot MT41K256M16HA-107G:E
Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고20,916
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
hot MT41K256M16HA-107:E
Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고80,244
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
MT41K256M16HA-107 IT:E
Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고5,328
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
M29W640FT70ZA6F TR
Micron Technology Inc.

IC FLASH 64MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
패키지: 48-TFBGA
재고6,016
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
N25Q256A13ESFH0F TR
Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (64M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP2
패키지: 16-SOIC (0.295", 7.50mm Width)
재고7,328
FLASH
FLASH - NOR
256Mb (64M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP2
hot N25Q064A13E1241E
Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 24TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (16M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-T-PBGA (6x8)
패키지: 24-TBGA
재고7,408
FLASH
FLASH - NOR
64Mb (16M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-T-PBGA (6x8)
MT47H64M16HR-25E XIT:H
Micron Technology Inc.

IC SDRAM 1GBIT 400MHZ 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (8x12.5)
패키지: 84-TFBGA
재고5,152
DRAM
SDRAM - DDR2
1Gb (64M x 16)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 95°C (TC)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
MT47H128M8CF-3 AAT:H
Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x10)
패키지: 60-TFBGA
재고2,176
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 105°C (TC)
Surface Mount
60-TFBGA
60-FBGA (8x10)
MT41J64M16JT-15E XIT:G
Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
패키지: 96-TFBGA
재고7,904
DRAM
SDRAM - DDR3
1Gb (64M x 16)
Parallel
667MHz
-
-
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
hot MT41J64M16JT-15E AIT:G
Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
패키지: 96-TFBGA
재고91,200
DRAM
SDRAM - DDR3
1Gb (64M x 16)
Parallel
667MHz
-
-
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)