페이지 337 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT47H128M8CF-3 AAT:H TR	Micron Technology Inc.	IC SDRAM 1GBIT 333MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고6,768	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 105°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT47H128M8CF-25E AIT:H TR	Micron Technology Inc.	IC SDRAM 1GBIT 400MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고5,376	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT47H128M8CF-187E:H TR	Micron Technology Inc.	IC SDRAM 1GBIT 533MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: 350ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고6,032	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	533MHz	15ns	350ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT47H128M4CF-25E:G TR	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (128M x 4) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고5,376	DRAM	SDRAM - DDR2	512Mb (128M x 4)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
MT47H128M16RT-187E:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: 350ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (9x12.5)	패키지: 84-TFBGA	재고7,424	DRAM	SDRAM - DDR2	2Gb (128M x 16)	Parallel	533MHz	15ns	350ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (9x12.5)
MT46V64M8P-5B L IT:J TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고6,128	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
MT46V64M8CY-5B L:J TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x12.5)	패키지: 60-TFBGA	재고6,656	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)
MT46V64M8CY-5B IT:J TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x12.5)	패키지: 60-TFBGA	재고2,272	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)
MT46V32M8P-5B IT:M TR	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고4,080	DRAM	SDRAM - DDR	256Mb (32M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
MT46V32M8CY-5B:M TR	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x12.5)	패키지: 60-TFBGA	재고4,992	DRAM	SDRAM - DDR	256Mb (32M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x12.5)
MT46V32M16P-5B L:J TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고2,496	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
MT46V128M4P-5B:J TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (128M x 4) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고3,392	DRAM	SDRAM - DDR	512Mb (128M x 4)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
MT46H64M32LFMA-6 WT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 167MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	패키지: 168-WFBGA	재고3,376	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
MT46H64M32LFMA-6 IT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 167MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	패키지: 168-WFBGA	재고6,048	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
MT46H64M32LFMA-5 WT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 200MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	패키지: 168-WFBGA	재고4,320	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
MT46H64M32LFMA-5 IT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 200MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	패키지: 168-WFBGA	재고4,208	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
MT46H64M32LFCX-6 WT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 167MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고6,000	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
MT46H64M32LFCX-6 AT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 167MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고3,408	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
MT46H64M32LFCX-5 WT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 200MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고7,744	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
MT46H64M32LFCX-5 IT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 200MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고4,704	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
MT46H64M32LFCX-5 AT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 200MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고4,208	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
MT46H64M32LFCX-5 AIT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 200MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고5,328	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
MT46H64M32LFCX-48 WT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 208MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고7,456	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
MT46H64M32LFCX-48 IT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 208MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고3,296	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
MT46H32M32LFMA-6 IT:B TR	Micron Technology Inc.	IC SDRAM 1GBIT 167MHZ 168WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-WFBGA (12x12)	패키지: 168-WFBGA	재고2,100	DRAM	SDRAM - Mobile LPDDR	1Gb (32M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	168-WFBGA	168-WFBGA (12x12)
MT46H32M32LFB5-6 AT:B TR	Micron Technology Inc.	IC SDRAM 1GBIT 167MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고2,880	DRAM	SDRAM - Mobile LPDDR	1Gb (32M x 32)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
MT46H32M32LFB5-5 AT:B TR	Micron Technology Inc.	IC SDRAM 1GBIT 200MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고5,040	DRAM	SDRAM - Mobile LPDDR	1Gb (32M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
MT46H32M32LFB5-48 IT:B TR	Micron Technology Inc.	IC SDRAM 1GBIT 208MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고7,456	DRAM	SDRAM - Mobile LPDDR	1Gb (32M x 32)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)

MT47H128M8CF-3 AAT:H TR

Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고6,768

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 105°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT47H128M8CF-25E AIT:H TR

Micron Technology Inc.

IC SDRAM 1GBIT 400MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고5,376

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT47H128M8CF-187E:H TR

Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 350ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고6,032

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

533MHz

15ns

350ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT47H128M4CF-25E:G TR

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (128M x 4)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고5,376

DRAM

SDRAM - DDR2

512Mb (128M x 4)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

MT47H128M16RT-187E:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 350ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (9x12.5)

패키지: 84-TFBGA

재고7,424

DRAM

SDRAM - DDR2

2Gb (128M x 16)

Parallel

533MHz

15ns

350ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (9x12.5)

MT46V64M8P-5B L IT:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고6,128

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

MT46V64M8CY-5B L:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x12.5)

패키지: 60-TFBGA

재고6,656

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x12.5)

MT46V64M8CY-5B IT:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x12.5)

패키지: 60-TFBGA

재고2,272

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x12.5)

MT46V32M8P-5B IT:M TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고4,080

DRAM

SDRAM - DDR

256Mb (32M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

MT46V32M8CY-5B:M TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x12.5)

패키지: 60-TFBGA

재고4,992

DRAM

SDRAM - DDR

256Mb (32M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x12.5)

MT46V32M16P-5B L:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고2,496

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

MT46V128M4P-5B:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (128M x 4)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고3,392

DRAM

SDRAM - DDR

512Mb (128M x 4)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

MT46H64M32LFMA-6 WT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 167MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

패키지: 168-WFBGA

재고3,376

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

MT46H64M32LFMA-6 IT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 167MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

패키지: 168-WFBGA

재고6,048

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

MT46H64M32LFMA-5 WT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

패키지: 168-WFBGA

재고4,320

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

MT46H64M32LFMA-5 IT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

패키지: 168-WFBGA

재고4,208

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

MT46H64M32LFCX-6 WT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 167MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고6,000

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

MT46H64M32LFCX-6 AT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 167MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고3,408

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

MT46H64M32LFCX-5 WT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고7,744

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

MT46H64M32LFCX-5 IT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고4,704

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

MT46H64M32LFCX-5 AT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고4,208

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

MT46H64M32LFCX-5 AIT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고5,328

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

MT46H64M32LFCX-48 WT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 208MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고7,456

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

MT46H64M32LFCX-48 IT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 208MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고3,296

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

MT46H32M32LFMA-6 IT:B TR

Micron Technology Inc.

IC SDRAM 1GBIT 167MHZ 168WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)

패키지: 168-WFBGA

재고2,100

DRAM

SDRAM - Mobile LPDDR

1Gb (32M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

168-WFBGA

168-WFBGA (12x12)

MT46H32M32LFB5-6 AT:B TR

Micron Technology Inc.

IC SDRAM 1GBIT 167MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고2,880

DRAM

SDRAM - Mobile LPDDR

1Gb (32M x 32)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

MT46H32M32LFB5-5 AT:B TR

Micron Technology Inc.

IC SDRAM 1GBIT 200MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고5,040

DRAM

SDRAM - Mobile LPDDR

1Gb (32M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

MT46H32M32LFB5-48 IT:B TR

Micron Technology Inc.

IC SDRAM 1GBIT 208MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고7,456

DRAM

SDRAM - Mobile LPDDR

1Gb (32M x 32)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)