페이지 35 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT62F512M64D4EK-031-AAT-B-TR	Micron Technology Inc.	LPDDR5 32G 512MX64 FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	-	-40°C ~ 105°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
MTC8C1084S1SC56BG1	Micron Technology Inc.	DDR5 16GB SODIMM VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08EBHBFJ4-3ITF-B-TR	Micron Technology Inc.	IC FLASH 256GBIT PAR 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 256Gbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	패키지: -	Request a Quote	FLASH	FLASH - NAND (TLC)	256Gbit	Parallel	333 MHz	-	-	2.5V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)
MT58L256L32FS-7-5	Micron Technology Inc.	IC SRAM 8MBIT PAR 113MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: 113 MHz Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	8Mbit	Parallel	113 MHz	-	7.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT58L512Y32DT-10	Micron Technology Inc.	IC SRAM 18MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	18Mbit	Parallel	100 MHz	-	5 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT58L256L32FS-8-5	Micron Technology Inc.	IC SRAM 8MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 8.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous	8Mbit	Parallel	100 MHz	-	8.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MTFC512GBCAXHE-WT	Micron Technology Inc.	UFS 4T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
M58BW32FB4T3T-TR	Micron Technology Inc.	IC FLASH 32MBIT 45NS 80PQFP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 80-BQFP Supplier Device Package: 80-PQFP (14x20)	패키지: -	Request a Quote	FLASH	FLASH - NOR	32Mbit	Parallel	-	45ns	45 ns	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	80-BQFP	80-PQFP (14x20)
MT62F2G64D8CZ-023-AIT-C	Micron Technology Inc.	LPDDR5 128GBIT 64 561/570 TFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08CECABH6-10-A	Micron Technology Inc.	IC FLASH 256GBIT PARALLEL Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT55V512V36PT-10	Micron Technology Inc.	IC SRAM 18MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous, ZBT Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 2.375V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous, ZBT	18Mbit	Parallel	100 MHz	-	5 ns	2.375V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT53E2G32D4DE-046-WT-C-TR	Micron Technology Inc.	LPDDR4 64G 2GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	64Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-25°C ~ 85°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MT62F1G32D2DS-023-AIT-C	Micron Technology Inc.	LPDDR5 32GBIT 32 315/315 TFBGA 2 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	4.266 GHz	-	-	1.05V	-	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT62F1G32D2DS-023-AIT-B	Micron Technology Inc.	LPDDR5 32G 1GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	1.05V	-40°C ~ 95°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT40A2G8JE-062E-AIT-E	Micron Technology Inc.	DDR4 16G 2GX8 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gbit Memory Interface: POD Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x11)	패키지: -	Request a Quote	DRAM	SDRAM - DDR4	16Gbit	POD	1.6 GHz	15ns	19 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x11)
MT53D384M32D2DS-046-AUT-E	Micron Technology Inc.	IC DRAM 12GBIT 2.133GHZ 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	12Gbit	-	2.133 GHz	-	-	1.1V	-40°C ~ 125°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT62F768M64D4EK-026-WT-B-TR	Micron Technology Inc.	LPDDR5 48G 768MX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	48Gbit	Parallel	3.2 GHz	-	-	-	-25°C ~ 85°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
MT55L512Y32PT-10	Micron Technology Inc.	IC SRAM 18MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous, ZBT Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous, ZBT	18Mbit	Parallel	100 MHz	-	5 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT62F8DAAS-DC-TR	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR5 PLASTIC MI Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F1G64D8EK-031-AIT-B	Micron Technology Inc.	LPDDR5 64G 1GX64 FBGA 8DP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	3.2 GHz	-	-	1.05V	-40°C ~ 95°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
MTC10C1084S1EC56BAZ	Micron Technology Inc.	DDR5 16GB EUDIMM VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F1536M64D8EK-026-AAT-B-TR	Micron Technology Inc.	LPDDR5 96GBIT 64 441/441 TFBGA 8 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 96Gbit Memory Interface: - Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	96Gbit	-	3.2 GHz	-	-	-	-40°C ~ 105°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
M25P128-VME6TG-TR	Micron Technology Inc.	IC FLASH 128MBIT 50MHZ 8VDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI Clock Frequency: 50 MHz Write Cycle Time - Word, Page: 15ms, 7ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFPN (MLP8) (8x6)	패키지: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI	50 MHz	15ms, 7ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-VDFPN (MLP8) (8x6)
MT58L32L32PT-6	Micron Technology Inc.	IC SRAM 1MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 3.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	1Mbit	Parallel	166 MHz	-	3.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT53E1536M64D8HJ-046-WT-C	Micron Technology Inc.	LPDDR4 96GBIT 64 556/841 TFBGA 8 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 96Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	96Gbit	-	2.133 GHz	-	-	-	-25°C ~ 85°C	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)
MT53E1536M64D8HJ-046-WT-B	Micron Technology Inc.	LPDDR4 96G 1.5GX64 FBGA 8DP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 96Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	96Gbit	-	2.133 GHz	-	-	-	-25°C ~ 85°C	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)
MT53E512M32D1ZW-046BAAT-B	Micron Technology Inc.	IC DRAM 16GBIT 2.133GHZ 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	16Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MT58L128L36P1T-7-5TR	Micron Technology Inc.	IC SRAM 4MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	4Mbit	Parallel	133 MHz	-	4 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)

MT62F512M64D4EK-031-AAT-B-TR

Micron Technology Inc.

LPDDR5 32G 512MX64 FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

-40°C ~ 105°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

MTC8C1084S1SC56BG1

Micron Technology Inc.

DDR5 16GB SODIMM VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT29F256G08EBHBFJ4-3ITF-B-TR

Micron Technology Inc.

IC FLASH 256GBIT PAR 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 256Gbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

패키지: -

Request a Quote

FLASH

FLASH - NAND (TLC)

256Gbit

Parallel

333 MHz

-

2.5V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)

MT58L256L32FS-7-5

Micron Technology Inc.

IC SRAM 8MBIT PAR 113MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: 113 MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

Request a Quote

SRAM

SRAM - Standard

8Mbit

Parallel

113 MHz

-

7.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT58L512Y32DT-10

Micron Technology Inc.

IC SRAM 18MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

Request a Quote

SRAM

SRAM - Standard

18Mbit

Parallel

100 MHz

-

5 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT58L256L32FS-8-5

Micron Technology Inc.

IC SRAM 8MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous

8Mbit

Parallel

100 MHz

-

8.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MTFC512GBCAXHE-WT

Micron Technology Inc.

UFS 4T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

M58BW32FB4T3T-TR

Micron Technology Inc.

IC FLASH 32MBIT 45NS 80PQFP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Supplier Device Package: 80-PQFP (14x20)

패키지: -

Request a Quote

FLASH

FLASH - NOR

32Mbit

Parallel

-

45ns

45 ns

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

80-BQFP

80-PQFP (14x20)

MT62F2G64D8CZ-023-AIT-C

Micron Technology Inc.

LPDDR5 128GBIT 64 561/570 TFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT29F256G08CECABH6-10-A

Micron Technology Inc.

IC FLASH 256GBIT PARALLEL

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT55V512V36PT-10

Micron Technology Inc.

IC SRAM 18MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous, ZBT
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 2.375V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

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SRAM

SRAM - Asynchronous, ZBT

18Mbit

Parallel

100 MHz

-

5 ns

2.375V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT53E2G32D4DE-046-WT-C-TR

Micron Technology Inc.

LPDDR4 64G 2GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR4X

64Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-25°C ~ 85°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MT62F1G32D2DS-023-AIT-C

Micron Technology Inc.

LPDDR5 32GBIT 32 315/315 TFBGA 2

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

4.266 GHz

-

1.05V

-

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT62F1G32D2DS-023-AIT-B

Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

1.05V

-40°C ~ 95°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT40A2G8JE-062E-AIT-E

Micron Technology Inc.

DDR4 16G 2GX8 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gbit
Memory Interface: POD
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x11)

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DRAM

SDRAM - DDR4

16Gbit

POD

1.6 GHz

15ns

19 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x11)

MT53D384M32D2DS-046-AUT-E

Micron Technology Inc.

IC DRAM 12GBIT 2.133GHZ 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR4

12Gbit

-

2.133 GHz

-

1.1V

-40°C ~ 125°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT62F768M64D4EK-026-WT-B-TR

Micron Technology Inc.

LPDDR5 48G 768MX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

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DRAM

SDRAM - Mobile LPDDR5

48Gbit

Parallel

3.2 GHz

-

-25°C ~ 85°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

MT55L512Y32PT-10

Micron Technology Inc.

IC SRAM 18MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous, ZBT
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

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SRAM

SRAM - Asynchronous, ZBT

18Mbit

Parallel

100 MHz

-

5 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT62F8DAAS-DC-TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR5 PLASTIC MI

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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-

MT62F1G64D8EK-031-AIT-B

Micron Technology Inc.

LPDDR5 64G 1GX64 FBGA 8DP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

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DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

3.2 GHz

-

1.05V

-40°C ~ 95°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

MTC10C1084S1EC56BAZ

Micron Technology Inc.

DDR5 16GB EUDIMM VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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-

MT62F1536M64D8EK-026-AAT-B-TR

Micron Technology Inc.

LPDDR5 96GBIT 64 441/441 TFBGA 8

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 96Gbit
Memory Interface: -
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

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DRAM

SDRAM - Mobile LPDDR5

96Gbit

-

3.2 GHz

-

-40°C ~ 105°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

M25P128-VME6TG-TR

Micron Technology Inc.

IC FLASH 128MBIT 50MHZ 8VDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: 15ms, 7ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (MLP8) (8x6)

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FLASH

FLASH - NOR

128Mbit

SPI

50 MHz

15ms, 7ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-VDFPN (MLP8) (8x6)

MT58L32L32PT-6

Micron Technology Inc.

IC SRAM 1MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

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SRAM

SRAM - Standard

1Mbit

Parallel

166 MHz

-

3.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT53E1536M64D8HJ-046-WT-C

Micron Technology Inc.

LPDDR4 96GBIT 64 556/841 TFBGA 8

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 96Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

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DRAM

SDRAM - Mobile LPDDR4

96Gbit

-

2.133 GHz

-

-25°C ~ 85°C

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)

MT53E1536M64D8HJ-046-WT-B

Micron Technology Inc.

LPDDR4 96G 1.5GX64 FBGA 8DP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 96Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

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DRAM

SDRAM - Mobile LPDDR4

96Gbit

-

2.133 GHz

-

-25°C ~ 85°C

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)

MT53E512M32D1ZW-046BAAT-B

Micron Technology Inc.

IC DRAM 16GBIT 2.133GHZ 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR4X

16Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MT58L128L36P1T-7-5TR

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

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SRAM

SRAM - Standard

4Mbit

Parallel

133 MHz

-

4 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)