페이지 383 - Micron Technology Inc. 제품 - 메모리 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 809
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Micron Technology Inc. 제품 - 메모리

기록 10,993
페이지  383/393
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT42L256M16D1GU-18 WT:A TR
Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.3 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-WFBGA
  • Supplier Device Package: 134-FBGA (10x11.5)
패키지: 134-WFBGA
재고4,768
DRAM
SDRAM - Mobile LPDDR2
4Gb (256M x 16)
Parallel
533MHz
-
-
1.14 V ~ 1.3 V
-30°C ~ 85°C (TC)
Surface Mount
134-WFBGA
134-FBGA (10x11.5)
MT42L128M64D2MC-18 IT:A TR
Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 240FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 8Gb (128M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.3 V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 240-WFBGA
  • Supplier Device Package: 240-FBGA (14x14)
패키지: 240-WFBGA
재고2,544
DRAM
SDRAM - Mobile LPDDR2
8Gb (128M x 64)
Parallel
533MHz
-
-
1.14 V ~ 1.3 V
-25°C ~ 85°C (TC)
Surface Mount
240-WFBGA
240-FBGA (14x14)
MT42L128M32D1TK-25 IT:A TR
Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.3 V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 138-UFBGA, WLBGA
  • Supplier Device Package: 134-FBGA (10x11.5)
패키지: 138-UFBGA, WLBGA
재고6,608
DRAM
SDRAM - Mobile LPDDR2
4Gb (128M x 32)
Parallel
400MHz
-
-
1.14 V ~ 1.3 V
-25°C ~ 85°C (TC)
Surface Mount
138-UFBGA, WLBGA
134-FBGA (10x11.5)
MT42L128M32D1TK-25 AIT:A TR
Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.3 V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 138-UFBGA, WLBGA
  • Supplier Device Package: 134-FBGA (10x11.5)
패키지: 138-UFBGA, WLBGA
재고3,952
DRAM
SDRAM - Mobile LPDDR2
4Gb (128M x 32)
Parallel
400MHz
-
-
1.14 V ~ 1.3 V
-25°C ~ 85°C (TC)
Surface Mount
138-UFBGA, WLBGA
134-FBGA (10x11.5)
MT42L128M32D1TK-25 AAT:A TR
Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.3 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 138-UFBGA, WLBGA
  • Supplier Device Package: 134-FBGA (10x11.5)
패키지: 138-UFBGA, WLBGA
재고6,416
DRAM
SDRAM - Mobile LPDDR2
4Gb (128M x 32)
Parallel
400MHz
-
-
1.14 V ~ 1.3 V
-40°C ~ 105°C (TC)
Surface Mount
138-UFBGA, WLBGA
134-FBGA (10x11.5)
MT42L128M32D1LF-18 WT:A TR
Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.3 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-WFBGA
  • Supplier Device Package: 168-FBGA (12x12)
패키지: 168-WFBGA
재고4,304
DRAM
SDRAM - Mobile LPDDR2
4Gb (128M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.3 V
-30°C ~ 85°C (TC)
Surface Mount
168-WFBGA
168-FBGA (12x12)
MT41K2G4SN-107:A TR
Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gb (2G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (9x13.2)
패키지: 78-TFBGA
재고6,272
DRAM
SDRAM - DDR3L
8Gb (2G x 4)
Parallel
933MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
-
78-TFBGA
78-FBGA (9x13.2)
MT38W201DAA033JZZI.X68 TR
Micron Technology Inc.

MCP 5MX16 PLASTIC 2.0V IND TEMP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,416
-
-
-
-
-
-
-
-
-
-
-
-
MT29F64G08CBEDBJ4-12IT:D TR
Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,608
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT29F64G08CBEDBJ4-12:D TR
Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,472
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F64G08ABCBBH6-6:B TR
Micron Technology Inc.

IC FLASH 64GBIT 167MHZ 152VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,016
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08EMCBBJ5-10:B TR
Micron Technology Inc.

IC FLASH 512GBIT 100MHZ 132TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,040
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08CUEDBJ6-12IT:D TR
Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 132LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,392
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT29F512G08CUEDBJ6-12:D TR
Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 132LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,320
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08CUCDBJ6-6ITR:D TR
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,800
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT29F512G08CMEABH7-12IT:A TR
Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,816
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT29F512G08CKEABH7-12IT:A TR
Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,056
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT29F512G08CKCBBH7-6R:B TR
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,568
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08AUEBBK8-12:B TR
Micron Technology Inc.

IC FLASH 512GBIT 83MHZ TLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,200
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08AUCBBK8-6:B TR
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ TLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,088
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08AUCBBH8-6:B TR
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,752
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F32G08CBADBWP-12:D TR
Micron Technology Inc.

IC FLASH 32GBIT 83MHZ 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,736
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F2T08CWCCBJ7-12:C TR
Micron Technology Inc.

IC FLASH 2TBIT 83MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,696
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F2T08CWCBBJ7-6R:B TR
Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,416
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F2T08CVCBBG6-6R:B TR
Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 272LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,480
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F2T08CTCBBJ7-6R:B TR
Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,152
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F256G08EFEBBWP:B TR
Micron Technology Inc.

IC FLASH 256GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,616
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F256G08EECBBJ4-6:B TR
Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,560
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-