페이지 390 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT42L64M32D1TK-18 IT:C	Micron Technology Inc.	LPDDR2 30NM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,888	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	-	-	-
MT42L64M32D1LF-18 IT:C	Micron Technology Inc.	LPDDR2 30NM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-TFBGA Supplier Device Package: 168-FBGA (12x12)	패키지: 168-TFBGA	재고4,448	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	168-TFBGA	168-FBGA (12x12)
EDF620AAABH-GD-F-D	Micron Technology Inc.	LPDDR3 6G 192MX32 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,896	-	-	-	-	-	-	-	-	-	-	-	-
MT42L32M16D1FE-25 IT:A	Micron Technology Inc.	LPDDR2 512M 32MX16 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 121-WFBGA Supplier Device Package: 121-FBGA (6.5x8)	패키지: 121-WFBGA	재고4,720	DRAM	SDRAM - Mobile LPDDR2	512Mb (32M x 16)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	121-WFBGA	121-FBGA (6.5x8)
MT42L16M32D1AC-25 IT:A	Micron Technology Inc.	IC LPDDR2 SDRAM 1GBIT VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	패키지: 134-VFBGA	재고4,480	DRAM	SDRAM - Mobile LPDDR2	512Mb (16M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-40°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
MT29C1G12MAAJVAKC-5 IT	Micron Technology Inc.	MCP 64MX16/32MX16 VFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,784	-	-	-	-	-	-	-	-	-	-	-	-
MT38W201DAA033JZZI.X68	Micron Technology Inc.	MCP 5MX16 PLASTIC 2.0V IND Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,256	-	-	-	-	-	-	-	-	-	-	-	-
MT29F512G08EMCBBJ5-6:B.001	Micron Technology Inc.	IC FLASH 512GBIT 167MHZ 132TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,640	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08EMCBBJ5-6:B	Micron Technology Inc.	IC FLASH 512GBIT 167MHZ 132TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,448	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08EKCBBJ5-6:B	Micron Technology Inc.	NAND FLASH Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,728	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08EFEBBWP:B	Micron Technology Inc.	IC FLASH 256GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,392	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F256G08EECBBJ4-6:B	Micron Technology Inc.	IC FLASH 256GBIT 167MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,864	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08EBEBBWP:B	Micron Technology Inc.	NAND FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,224	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08EBEBBB95A3WC1-M	Micron Technology Inc.	NAND FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,696	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08EBEBBB95A3WC1	Micron Technology Inc.	NAND FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,912	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08EMCBBJ5-10:B	Micron Technology Inc.	IC FLASH 512GBIT 100MHZ 132TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,456	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08EBCBBJ4-6:B	Micron Technology Inc.	48GX8 NAND FLASH PLASTIC COMMERC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,928	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	166MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT53B512M32D2GZ-062 WT:B	Micron Technology Inc.	LPDDR4 16G 512MX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,712	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M32D2GZ-062 AIT:B	Micron Technology Inc.	LPDDR4 384MX64 WFB Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,656	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT53B256M32D1GZ-062 WT:B	Micron Technology Inc.	LPDDR4 8G 256MX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,992	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M32D1GZ-062 AIT:B	Micron Technology Inc.	LPDDR4 256MX64 WFB Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,256	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT42L32M16D1U67MWC2	Micron Technology Inc.	LPDDR2 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,016	-	-	-	-	-	-	-	-	-	-	-	-
MT42L32M16D1U67MWC1	Micron Technology Inc.	LPDDR2 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,488	-	-	-	-	-	-	-	-	-	-	-	-
MT42L16M32D1U67MWC2	Micron Technology Inc.	IC LPDDR2 SDRAM 1GBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,808	-	-	-	-	-	-	-	-	-	-	-	-
EDFP112A3PB-JD-F-R	Micron Technology Inc.	LPDDR3 24G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,088	-	-	-	-	-	-	-	-	-	-	-	-
EDFP112A3PB-JD-F-D	Micron Technology Inc.	LPDDR3 24G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,288	-	-	-	-	-	-	-	-	-	-	-	-
EDFP112A3PB-GD-F-R	Micron Technology Inc.	LPDDR3 24G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,888	-	-	-	-	-	-	-	-	-	-	-	-
EDFP112A3PB-GD-F-D	Micron Technology Inc.	LPDDR3 24G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,592	-	-	-	-	-	-	-	-	-	-	-	-

MT42L64M32D1TK-18 IT:C

Micron Technology Inc.

LPDDR2 30NM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,888

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

-

MT42L64M32D1LF-18 IT:C

Micron Technology Inc.

LPDDR2 30NM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-TFBGA
Supplier Device Package: 168-FBGA (12x12)

패키지: 168-TFBGA

재고4,448

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

168-TFBGA

168-FBGA (12x12)

EDF620AAABH-GD-F-D

Micron Technology Inc.

LPDDR3 6G 192MX32 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,896

-

MT42L32M16D1FE-25 IT:A

Micron Technology Inc.

LPDDR2 512M 32MX16 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 121-WFBGA
Supplier Device Package: 121-FBGA (6.5x8)

패키지: 121-WFBGA

재고4,720

DRAM

SDRAM - Mobile LPDDR2

512Mb (32M x 16)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

121-WFBGA

121-FBGA (6.5x8)

MT42L16M32D1AC-25 IT:A

Micron Technology Inc.

IC LPDDR2 SDRAM 1GBIT VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

패키지: 134-VFBGA

재고4,480

DRAM

SDRAM - Mobile LPDDR2

512Mb (16M x 32)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-40°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

MT29C1G12MAAJVAKC-5 IT

Micron Technology Inc.

MCP 64MX16/32MX16 VFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,784

-

MT38W201DAA033JZZI.X68

Micron Technology Inc.

MCP 5MX16 PLASTIC 2.0V IND

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,256

-

MT29F512G08EMCBBJ5-6:B.001

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,640

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08EMCBBJ5-6:B

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,448

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08EKCBBJ5-6:B

Micron Technology Inc.

NAND FLASH

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,728

-

MT29F256G08EFEBBWP:B

Micron Technology Inc.

IC FLASH 256GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,392

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F256G08EECBBJ4-6:B

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,864

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F128G08EBEBBWP:B

Micron Technology Inc.

NAND FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,224

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F128G08EBEBBB95A3WC1-M

Micron Technology Inc.

NAND FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,696

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F128G08EBEBBB95A3WC1

Micron Technology Inc.

NAND FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,912

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08EMCBBJ5-10:B

Micron Technology Inc.

IC FLASH 512GBIT 100MHZ 132TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,456

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F128G08EBCBBJ4-6:B

Micron Technology Inc.

48GX8 NAND FLASH PLASTIC COMMERC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,928

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

166MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT53B512M32D2GZ-062 WT:B

Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,712

DRAM

SDRAM - Mobile LPDDR4

16Gb (512M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B512M32D2GZ-062 AIT:B

Micron Technology Inc.

LPDDR4 384MX64 WFB

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,656

DRAM

SDRAM - Mobile LPDDR4

16Gb (512M x 32)

-

1600MHz

-

1.1V

-40°C ~ 95°C (TC)

-

MT53B256M32D1GZ-062 WT:B

Micron Technology Inc.

LPDDR4 8G 256MX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,992

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M32D1GZ-062 AIT:B

Micron Technology Inc.

LPDDR4 256MX64 WFB

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,256

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-40°C ~ 95°C (TC)

-

MT42L32M16D1U67MWC2

Micron Technology Inc.

LPDDR2

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,016

-

MT42L32M16D1U67MWC1

Micron Technology Inc.

LPDDR2

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,488

-

MT42L16M32D1U67MWC2

Micron Technology Inc.

IC LPDDR2 SDRAM 1GBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,808

-

EDFP112A3PB-JD-F-R

Micron Technology Inc.

LPDDR3 24G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,088

-

EDFP112A3PB-JD-F-D

Micron Technology Inc.

LPDDR3 24G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,288

-

EDFP112A3PB-GD-F-R

Micron Technology Inc.

LPDDR3 24G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,888

-

EDFP112A3PB-GD-F-D

Micron Technology Inc.

LPDDR3 24G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,592

-