페이지 51 - Micron Technology Inc. 제품 - 메모리 | Heisener Electronics
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Micron Technology Inc. 제품 - 메모리

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Technology
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Memory Interface
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Write Cycle Time - Word, Page
Access Time
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Operating Temperature
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Supplier Device Package
MTFC256GARATEK-WT-TR
Micron Technology Inc.

UFS 2T

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Tbit
  • Memory Interface: UFS 3.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-VFBGA (11.5x13)
패키지: -
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FLASH
FLASH - NAND (SLC)
2Tbit
UFS 3.1
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
MT58V1MV18FT-7
Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.375V ~ 2.625V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - Standard
18Mbit
Parallel
-
-
-
2.375V ~ 2.625V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MT29VZZZBDAFQKWL-046-W-G0J
Micron Technology Inc.

UMCP 2096G

  • Memory Type: Non-Volatile, Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR4X
  • Memory Size: 2Tbit (NAND), 48Gbit (LPDDR4X)
  • Memory Interface: UFS2.1
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 254-BGA
  • Supplier Device Package: 254-MCP
패키지: -
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FLASH, RAM
FLASH - NAND, DRAM - LPDDR4X
2Tbit (NAND), 48Gbit (LPDDR4X)
UFS2.1
2.133 GHz
-
-
-
-25°C ~ 85°C
Surface Mount
254-BGA
254-MCP
MT55V512V36PF-10
Micron Technology Inc.

IC SRAM 18MBIT PAR 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - ZBT
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 2.375V ~ 2.625V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: -
Request a Quote
SRAM
SRAM - ZBT
18Mbit
Parallel
100 MHz
-
5 ns
2.375V ~ 2.625V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
MT58L256L18F1T-8-5IT
Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - Standard
4Mbit
Parallel
100 MHz
-
8.5 ns
3.135V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MT58L256L18F1T-8-5TR
Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - Standard
4Mbit
Parallel
100 MHz
-
8.5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MT53E1G64D4SP-046-WT-C
Micron Technology Inc.

IC MEMORY DRAM 64G 1GX64 BGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
MT29RZ4C8DZZMHAN-18W-8D
Micron Technology Inc.

IC FLASH 4GIBT LPPDR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
-
-
-
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-
-
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-
MT41K512M16VRP-107-AAT-P-TR
Micron Technology Inc.

DDR3 8G 512MX16 FBGA DDP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
패키지: -
재고2,310
DRAM
SDRAM - DDR3L
8Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
MT62F1G64D4EK-023-FAAT-B
Micron Technology Inc.

LPDDR5 64G 1GX64 FBGA Y42M

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.05V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 441-TFBGA
  • Supplier Device Package: 441-TFBGA (14x14)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
64Gbit
Parallel
4.266 GHz
-
-
1.05V
-
Surface Mount
441-TFBGA
441-TFBGA (14x14)
MT62F1G64D4EK-023-FAAT-C
Micron Technology Inc.

LPDDR5 64GBIT 64 441/441 TFBGA 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.05V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 441-TFBGA
  • Supplier Device Package: 441-TFBGA (14x14)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
64Gbit
Parallel
2.133 GHz
-
-
1.05V
-40°C ~ 105°C
Surface Mount
441-TFBGA
441-TFBGA (14x14)
MT40A512M16Z41CWC1
Micron Technology Inc.

DDR4 8GB

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
-
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-
-
-
-
MT55L256L18P1T-7-5TR
Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - ZBT
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - ZBT
4Mbit
Parallel
133 MHz
-
4.2 ns
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MT55L256L18P1T-7-5IT
Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, ZBT
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - Synchronous, ZBT
4Mbit
Parallel
133 MHz
-
4.2 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)
MTFC256GAXAUEA-WT
Micron Technology Inc.

UFS 2T

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Tbit
  • Memory Interface: UFS
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-WFBGA
  • Supplier Device Package: 153-WFBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Tbit
UFS
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
MTFC8GAMALGT-AAT-TR
Micron Technology Inc.

IC FLASH 64GBIT MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gbit
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
FLASH
FLASH - NAND
64Gbit
MMC
-
-
-
-
-40°C ~ 105°C (TA)
-
-
-
MTFC32GASAONS-AAT-TR
Micron Technology Inc.

USSD 256G

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 256Gbit
  • Memory Interface: UFS2.1
  • Clock Frequency: 52 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-TFBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
256Gbit
UFS2.1
52 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TC)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
MT53E512M32D2NP-053-RS-WT-H-TR
Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA DDP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MTFC64GAXAUEA-WT
Micron Technology Inc.

UFS 512G

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 512Gbit
  • Memory Interface: UFS2.2
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-VFBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
512Gbit
UFS2.2
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
MT53E512M32D1ZW-046-WT-B-TR
Micron Technology Inc.

IC DRAM 16GBIT 2.133GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
16Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-25°C ~ 85°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MT53E512M64D2HJ-046-AAT-B-TR
Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 32Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-TFBGA
  • Supplier Device Package: 556-WFBGA (12.4x12.4)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
32Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 105°C (TC)
Surface Mount
556-TFBGA
556-WFBGA (12.4x12.4)
MT53E768M32D2ZW-046-AUT-C-TR
Micron Technology Inc.

LPDDR4 24GBIT 32 200/264 TFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
MT58L128V36P1F-5
Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.8 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: -
Request a Quote
SRAM
SRAM - Standard
4Mbit
Parallel
200 MHz
-
2.8 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
MT58L128V36P1F-6
Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: -
Request a Quote
SRAM
SRAM - Standard
4Mbit
Parallel
166 MHz
-
3.5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
MT29F512G08EBLEEJ4-QA-E-TR
Micron Technology Inc.

TLC 512G 64GX8 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
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-
-
-
-
-
-
-
-
-
-
MT62F1536M64D8CZ-023-WT-C
Micron Technology Inc.

LPDDR5 96GBIT 64 561/570 TFBGA 8

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
MT62F1536M32D4DS-026-AIT-B-TR
Micron Technology Inc.

LPDDR5 48GBIT 32 315/315 TFBGA 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 48Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 3.2 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 95°C
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
48Gbit
Parallel
3.2 GHz
-
-
-
-40°C ~ 95°C
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
MT58L64L36DT-10
Micron Technology Inc.

IC SRAM 2MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 2Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
SRAM
SRAM - Standard
2Mbit
Parallel
100 MHz
-
5 ns
3.135V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20.1)