Micron Technology Inc. 제품

MTFC4GLYAM-WT TR

Micron Technology Inc.

IC FLASH 32GBIT 153VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 32Gb (4G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT47H64M16HR-25 IT:H TR

Micron Technology Inc.

IC SDRAM 1GBIT 400MHZ 84FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 84-TFBGA
• Supplier Device Package: 84-FBGA (8x12.5)

패키지: 84-TFBGA

MT46H16M32LFCX-5:B

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

M29F040B70N1T TR

Micron Technology Inc.

IC FLASH 4MBIT 70NS 32TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 32-TSOP (8x20)

패키지: 32-TFSOP (0.724", 18.40mm Width)

MT28F800B3SG-9 TET

Micron Technology Inc.

IC FLASH 8MBIT 90NS 44SOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8, 512K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 90ns
• Access Time: 90ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-SOIC (0.496", 12.60mm Width)
• Supplier Device Package: 44-SOP

패키지: 44-SOIC (0.496", 12.60mm Width)

PC28F320C3BD70A

Micron Technology Inc.

IC FLASH 32MBIT 70NS 64EASYBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - Boot Block
• Memory Size: 32Mb (2M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-EasyBGA (10x13)

패키지: 64-TBGA

MT46V256M4P-75:A

Micron Technology Inc.

IC SDRAM 1GBIT 133MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 1Gb (256M x 4)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

MT46V128M4P-5B:F

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

MTFC64GAKAEEY-3M WT TR

Micron Technology Inc.

IC FLASH 64GBIT 153LFBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53B384M64D4TP-062 XT ES:B TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.6GHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 24Gb (384M x 64)
• Memory Interface: -
• Clock Frequency: 1600MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29RZ4C8DZZMHAN-18W.80D TR

Micron Technology Inc.

MCP 256MX16/256MX32 PLASTIC WIRE

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29F64G08CBABAWP-IT:B TR

Micron Technology Inc.

IC FLASH 64GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 64Gb (8G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

M25P128-VME6GB

Micron Technology Inc.

IC FLASH 128MBIT 54MHZ 8VFDFPN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI
• Clock Frequency: 54MHz
• Write Cycle Time - Word, Page: 15ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-VDFPN (MLP8) (8x6)

패키지: 8-VDFN Exposed Pad

MT29F2G08ABAFAH4-IT:F

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT25QL128ABA8E12-0AAT TR

Micron Technology Inc.

IC FLASH 128MBIT 133MHZ 24TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

MT28EW128ABA1HPC-0SIT

Micron Technology Inc.

IC FLASH 128MBIT 70NS 64LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 95ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

MT53B256M32D1TG-062 XT:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 8Gb (256M x 32)
• Memory Interface: -
• Clock Frequency: 1600MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 105°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT28EW512ABA1HPC-0AAT

Micron Technology Inc.

IC FLASH 512M PARALLEL 64LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (64M x 8, 32M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 105ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

MT53E1G64D8NW-046 WT:E TR

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA WT 8DP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53D768M64D4NZ-046 WT:A TR

Micron Technology Inc.

LPDDR4 48G 768MX64 FBGA QDP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MTFC64GAPALNA-AIT

Micron Technology Inc.

EMMC 512G MMC5.1 J58X AT

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53D512M64D4NW-053 WT ES:D

Micron Technology Inc.

IC DRAM 32G 1866MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gb (512M x 64)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29F1T08CMHBBJ4-3R:B

Micron Technology Inc.

IC FLASH 1T PARALLEL 333MHZ

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Tb (128G x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53E1536M64D8HJ-046-AIT-C

Micron Technology Inc.

LPDDR4 96GBIT 64 556/841 TFBGA 8

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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MT29F1G08ABBEAM68M3WC1L

Micron Technology Inc.

IC FLASH 1GBIT DIE

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND (SLC)
• Memory Size: 1Gbit
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 1.95V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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MT58L256L18F1T-8-5TR

Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Standard
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8.5 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

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MT58L64L36FT-7-5

Micron Technology Inc.

IC SRAM 2MBIT PAR 113MHZ 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Standard
• Memory Size: 2Mbit
• Memory Interface: Parallel
• Clock Frequency: 113 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 7.5 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

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MT62F3G32D8DV-023-AUT-C-TR

Micron Technology Inc.

LPDDR5 96GBIT 32 315/315 LFBGA 8

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5X
• Memory Size: 96Gbit
• Memory Interface: LVSTL
• Clock Frequency: 4.266 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.01V ~ 1.12V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 315-LFBGA
• Supplier Device Package: 315-LFBGA (12.4x15)

패키지: -

Request a Quote