페이지 206 - Micron Technology Inc. 제품

부품 번호	제조업체	설명	패키지	재고
M29F800FT5AM6F2 TR	Micron Technology Inc.	IC FLASH 8MBIT 55NS 44SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC (0.496", 12.60mm Width) Supplier Device Package: 44-SO	패키지: 44-SOIC (0.496", 12.60mm Width)	재고4,416
MTFC16GJVEC-WT	Micron Technology Inc.	IC FLASH 128GBIT 169WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고2,528
MT42L256M64D4EV-18 WT:A	Micron Technology Inc.	IC SDRAM 16GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 253-TFBGA Supplier Device Package: 253-FBGA (11x11)	패키지: 253-TFBGA	재고5,296
N25Q128A11TF840F TR	Micron Technology Inc.	IC FLASH 128MBIT 108MHZ 8VPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFPN (MLP8) (8x6)	패키지: 8-VDFN Exposed Pad	재고5,472
PC48F4400P0TB00A	Micron Technology Inc.	IC FLASH 512MBIT 85NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	패키지: 64-TBGA	재고2,336
MT47H512M4THN-37E:E TR	Micron Technology Inc.	IC SDRAM 2GBIT 266MHZ 63FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (512M x 4) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: 15ns Access Time: 500ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 63-FBGA Supplier Device Package: 63-FBGA (9x11.5)	패키지: 63-FBGA	재고4,384
MT28F320J3BS-11 ET	Micron Technology Inc.	IC FLASH 32MBIT 110NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-FBGA Supplier Device Package: 64-FBGA (10x13)	패키지: 64-FBGA	재고12,288
MT29E1T08CMHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 1TBIT 333MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,872
MT52L256M64D2LZ-107 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,256
PC28F512P30EFB TR	Micron Technology Inc.	IC FLASH 512MBIT 100NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-VBGA Supplier Device Package: 64-EasyBGA (8x10)	패키지: 64-VBGA	재고2,112
N25Q128A11EF840E	Micron Technology Inc.	IC FLASH 128MBIT 108MHZ 8VDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (32M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFPN (MLP8) (8x6)	패키지: 8-VDFN Exposed Pad	재고11,880
M29W256GH70ZS6E	Micron Technology Inc.	IC FLASH 256MBIT 70NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	패키지: 64-LBGA	재고4,784
MT53D512M32D2NP-046 WT:D	Micron Technology Inc.	IC DRAM 16G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,128
MT29F2T08CQHBBG2-3R:B TR	Micron Technology Inc.	MLC 2T 256GX8 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,264
MT41K256M16TW-093:P TR	Micron Technology Inc.	IC DRAM 4G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고3,568
MT53D1024M32D4DT-046 AUT:D TR	Micron Technology Inc.	IC DRAM 32G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,168
MT29C8G96MAZBBDKD-48 IT	Micron Technology Inc.	IC FLASH RAM 8G PARALLEL 208MHZ Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,832
MT40A512M8SA-062E AAT:F	Micron Technology Inc.	IC DRAM 4G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	패키지: 78-TFBGA	재고7,600
MT62F1536M32D4DS-026-AAT-B	Micron Technology Inc.	LPDDR5 48G 1.5GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote
MT53E512M32D4NQ-053-RS-WT-F-TR	Micron Technology Inc.	LPDDR4 16G 512MX32 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
MT62F4DCAM-DC-TR	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR5 PLASTIC MI Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
M29F800FB5AM6F2	Micron Technology Inc.	FLASH NOR 8Mb 5v SOIC (Btm Bt-Bl Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC Supplier Device Package: 44-SOIC (0.496", 12.60mm Width)	패키지: -	Request a Quote
MT62F2G32D4DS-023-AIT-B	Micron Technology Inc.	LPDDR5 64G 2GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote
MT29VZZZBD9GULPR-046-W-214	Micron Technology Inc.	EMCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
MT62F8D1AEK-DC-TR	Micron Technology Inc.	LPDDR5 64G 1GX64 FBGA 8DP Y31M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.01V ~ 1.12V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
M25P40-VMN3TP-X-TR	Micron Technology Inc.	IC FLASH 4MBIT 50MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mbit Memory Interface: SPI Clock Frequency: 50 MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: -	Request a Quote
MT29F1T08GBLBEJ4-B	Micron Technology Inc.	IC FLASH 1TBIT PARALLEL 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	패키지: -	Request a Quote
MT62F4DBAS-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR5 PLASTIC MI Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote

M29F800FT5AM6F2 TR

Micron Technology Inc.

IC FLASH 8MBIT 55NS 44SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SO

패키지: 44-SOIC (0.496", 12.60mm Width)

재고4,416

MTFC16GJVEC-WT

Micron Technology Inc.

IC FLASH 128GBIT 169WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,528

MT42L256M64D4EV-18 WT:A

Micron Technology Inc.

IC SDRAM 16GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 253-TFBGA
Supplier Device Package: 253-FBGA (11x11)

패키지: 253-TFBGA

재고5,296

N25Q128A11TF840F TR

Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 8VPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (MLP8) (8x6)

패키지: 8-VDFN Exposed Pad

재고5,472

PC48F4400P0TB00A

Micron Technology Inc.

IC FLASH 512MBIT 85NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

패키지: 64-TBGA

재고2,336

MT47H512M4THN-37E:E TR

Micron Technology Inc.

IC SDRAM 2GBIT 266MHZ 63FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (512M x 4)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 500ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 63-FBGA
Supplier Device Package: 63-FBGA (9x11.5)

패키지: 63-FBGA

재고4,384

MT28F320J3BS-11 ET

Micron Technology Inc.

IC FLASH 32MBIT 110NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-FBGA
Supplier Device Package: 64-FBGA (10x13)

패키지: 64-FBGA

재고12,288

MT29E1T08CMHBBJ4-3ES:B TR

Micron Technology Inc.

IC FLASH 1TBIT 333MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,872

MT52L256M64D2LZ-107 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,256

PC28F512P30EFB TR

Micron Technology Inc.

IC FLASH 512MBIT 100NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-VBGA
Supplier Device Package: 64-EasyBGA (8x10)

패키지: 64-VBGA

재고2,112

N25Q128A11EF840E

Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 8VDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFPN (MLP8) (8x6)

패키지: 8-VDFN Exposed Pad

재고11,880

M29W256GH70ZS6E

Micron Technology Inc.

IC FLASH 256MBIT 70NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

패키지: 64-LBGA

재고4,784

MT53D512M32D2NP-046 WT:D

Micron Technology Inc.

IC DRAM 16G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,128

MT29F2T08CQHBBG2-3R:B TR

Micron Technology Inc.

MLC 2T 256GX8 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,264

MT41K256M16TW-093:P TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고3,568

MT53D1024M32D4DT-046 AUT:D TR

Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,168

MT29C8G96MAZBBDKD-48 IT

Micron Technology Inc.

IC FLASH RAM 8G PARALLEL 208MHZ

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,832

MT40A512M8SA-062E AAT:F

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

패키지: 78-TFBGA

재고7,600

MT62F1536M32D4DS-026-AAT-B

Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

패키지: -

Request a Quote

MT53E512M32D4NQ-053-RS-WT-F-TR

Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

MT62F4DCAM-DC-TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR5 PLASTIC MI

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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M29F800FB5AM6F2

Micron Technology Inc.

FLASH NOR 8Mb 5v SOIC (Btm Bt-Bl

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC
Supplier Device Package: 44-SOIC (0.496", 12.60mm Width)

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MT62F2G32D4DS-023-AIT-B

Micron Technology Inc.

LPDDR5 64G 2GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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MT29VZZZBD9GULPR-046-W-214

Micron Technology Inc.

EMCP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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MT62F8D1AEK-DC-TR

Micron Technology Inc.

LPDDR5 64G 1GX64 FBGA 8DP Y31M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.01V ~ 1.12V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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M25P40-VMN3TP-X-TR

Micron Technology Inc.

IC FLASH 4MBIT 50MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mbit
Memory Interface: SPI
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

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MT29F1T08GBLBEJ4-B

Micron Technology Inc.

IC FLASH 1TBIT PARALLEL 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

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MT62F4DBAS-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR5 PLASTIC MI

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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