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Micron Technology Inc. 제품

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페이지  265/308
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EDF8164A3MA-GD-F-R TR
Micron Technology Inc.

IC SDRAM 8GBIT 800MHZ 253FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 8Gb (128M x 64)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,624
N25Q00AA11GSF40G
Micron Technology Inc.

IC FLASH 1GBIT 108MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (256M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP2
패키지: 16-SOIC (0.295", 7.50mm Width)
재고4,176
MT28HL64GRBA6EBL-0GCT
Micron Technology Inc.

NOR FLASH 1GX64 PLASTIC PBF TLGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,544
MT49H32M18FM-33:B TR
Micron Technology Inc.

IC RLDRAM 576MBIT 300MHZ 144UBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (32M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 300MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-µBGA (18.5x11)
패키지: 144-TFBGA
재고7,696
MT29F256G08CKCABH2-10:A TR
Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,944
M29W640GL70ZS6E
Micron Technology Inc.

IC FLASH 64MBIT 70NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
패키지: 64-LBGA
재고6,928
M28W640HCT70ZB6E
Micron Technology Inc.

IC FLASH 64MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6.39x10.5)
패키지: 48-TFBGA
재고5,232
MTFC2GMTEA-WT
Micron Technology Inc.

IC FLASH 16GBIT 153WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-WFBGA
  • Supplier Device Package: 153-WFBGA (11.5x13)
패키지: 153-WFBGA
재고5,520
hot MT46H128M32L2MC-5 WT:B
Micron Technology Inc.

IC SDRAM 4GBIT 200MHZ 240WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 240-WFBGA
  • Supplier Device Package: 240-WFBGA (14x14)
패키지: 240-WFBGA
재고30,144
MT46V32M8CY-5B:M
Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x12.5)
패키지: 60-TFBGA
재고3,696
MT41K1G4THD-187E:D
Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (1G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.125ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (9x11.5)
패키지: 78-TFBGA
재고3,568
hot NAND512R3A2CZA6E
Micron Technology Inc.

IC FLASH 512MBIT 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50ns
  • Access Time: 50ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-TFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
패키지: 63-TFBGA
재고14,580
hot M29W640GB70ZF6E
Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-TBGA (10x13)
패키지: 64-TBGA
재고4,864
PC28F256P30B85F
Micron Technology Inc.

IC FLASH 256MBIT 85NS 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (10x13)
패키지: 64-TBGA
재고7,760
MT46V32M16FN-6 IT:C
Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (10x12.5)
패키지: 60-TFBGA
재고6,592
MT29F6T08ETCBBM5-37ES:B TR
Micron Technology Inc.

IC FLASH 6TBIT 267MHZ LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 6Tb (768G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,000
MT29TZZZAD7JKKFB-107 W.97R TR
Micron Technology Inc.

MLC EMMC/LPDDR3 272G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,432
hot MT29VZZZAD8DQKSM-053 W.9D8
Micron Technology Inc.

ALL IN ONE MCP 4352G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,944
MT28EW512ABA1HJS-0AAT
Micron Technology Inc.

IC FLASH 512M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8, 32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 105ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP (14x20)
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고4,608
MT53E1G64D8NW-046 WT:E
Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA WT 8DP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,928
MT53B768M32D4NQ-062 AIT:B
Micron Technology Inc.

IC DRAM 24G 1600MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 24Gb (768M x 32)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,376
MT53B512M64D4NH-062 WT:C
Micron Technology Inc.

IC DRAM 32G 1600MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,296
MTFC32GJGEF-AIT Z
Micron Technology Inc.

IC FLASH 256G MMC 169TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 169-TFBGA
  • Supplier Device Package: 169-TFBGA (14x18)
패키지: 169-TFBGA
재고3,392
MT53E512M64D2NW-046-WT-B-TR
Micron Technology Inc.

IC MEMORY DRAM 32G 512MX64 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 432-VFBGA
  • Supplier Device Package: 432-VFBGA (15x15)
패키지: -
Request a Quote
MT29F4T08EULEEM4-QC-E-TR
Micron Technology Inc.

TLC 4T 512GX8 LBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
MT53D384M32D2DS-046-AIT-E
Micron Technology Inc.

IC DRAM 12GBIT 2.133GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gbit
  • Memory Interface: -
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
MT58L256L18P1T-10
Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Standard
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20.1)
패키지: -
Request a Quote
MT60B4G4RZ-56B-D
Micron Technology Inc.

DDR5 16G 4GX4 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR5
  • Memory Size: 16Gbit
  • Memory Interface: POD
  • Clock Frequency: 2.8 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 16 ns
  • Voltage - Supply: -
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-FBGA (7.5x11)
패키지: -
Request a Quote