이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
패키지: A, Axial |
재고6,804 |
|
400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 2.5A AXIAL
|
패키지: A, Axial |
재고5,184 |
|
150V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | - | Through Hole | A, Axial | - | 175°C (Max) |
||
Microsemi Corporation |
DIODE GEN PURP 125V 300MA D5D
|
패키지: SQ-MELF, D |
재고6,516 |
|
125V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 50nA @ 20V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A D5B
|
패키지: SQ-MELF, B |
재고7,664 |
|
400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
|
패키지: A, Axial |
재고5,344 |
|
1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA D5D
|
패키지: SQ-MELF, D |
재고5,392 |
|
75V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
패키지: B, Axial |
재고4,928 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
패키지: A, Axial |
재고6,416 |
|
200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
패키지: A, Axial |
재고7,504 |
|
200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고6,816 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고6,480 |
|
75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A TO220
|
패키지: TO-220-3 |
재고4,912 |
|
1000V | 15A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 250µA @ 1000V | - | Through Hole | TO-220-3 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 150MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고8,472 |
|
50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고20,316 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220
|
패키지: TO-220-2 |
재고15,696 |
|
600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고294,348 |
|
75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220
|
패키지: TO-220-2 |
재고131,976 |
|
600V | 15A | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 35A DO5
|
패키지: DO-203AB, DO-5, Stud |
재고4,960 |
|
600V | 35A | 1.4V @ 110A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE MODULE 600V 500A LP4
|
패키지: LP4 |
재고6,000 |
|
600V | 500A | 1.8V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 2.5mA @ 600V | - | Chassis Mount | LP4 | LP4 | - |
||
Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 99A
|
패키지: TO-247-2 |
재고6,864 |
|
1200V | 99A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 1200V | 2100pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 4A B-MELF
|
패키지: SQ-MELF, B |
재고6,648 |
|
- | 4A (DC) | 1V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
패키지: A, Axial |
재고12,732 |
|
400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고18,312 |
|
225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA
|
패키지: DO-213AA (Glass) |
재고5,664 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200MA DO35
|
패키지: SQ-MELF, B |
재고14,616 |
|
- | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
패키지: B, Axial |
재고13,104 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 225V 200MA DO35
|
패키지: DO-204AH, DO-35, Axial |
재고4,064 |
|
225V | 200mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
패키지: B, Axial |
재고16,176 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |