페이지 5 - Microsemi Corporation 제품 - 트랜지스터 - 양극(BJT) - 단일 | Heisener Electronics
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Microsemi Corporation 제품 - 트랜지스터 - 양극(BJT) - 단일

기록 859
페이지  5/31
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot JANTX2N2369A
Microsemi Corporation

TRANS NPN 15V TO18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: TO-206AA, TO-18-3 Metal Can
재고13,884
-
15V
450mV @ 10mA, 100mA
400nA
20 @ 100mA, 1V
360mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
JAN2N2222AL
Microsemi Corporation

TRANS NPN 50V 0.8A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: TO-206AA, TO-18-3 Metal Can
재고4,752
800mA
50V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
2N2221AUB
Microsemi Corporation

TRANS NPN 50V 0.8A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SMD
패키지: 3-SMD, Flat Leads
재고7,504
800mA
50V
1V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-SMD
hot 2N3057A
Microsemi Corporation

TRANS NPN 80V 1A TO-46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
패키지: TO-206AB, TO-46-3 Metal Can
재고6,688
1A
80V
500mV @ 50mA, 500mA
10nA
50 @ 500mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46-3
JAN2N720A
Microsemi Corporation

TRANS NPN 80V 0.5A TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: TO-206AA, TO-18-3 Metal Can
재고7,056
500mA
80V
5V @ 15mA, 150mA
10µA (ICBO)
40 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
2N4029
Microsemi Corporation

TRANS PNP 80V 1A TO-18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: TO-206AA, TO-18-3 Metal Can
재고2,608
1A
80V
1V @ 100mA, 1A
10µA (ICBO)
100 @ 100mA, 5V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
hot 2N3486A
Microsemi Corporation

TRANS PNP 60V 0.6A TO-46

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
패키지: TO-206AB, TO-46-3 Metal Can
재고4,672
600mA
60V
1.6V @ 50mA, 500mA
10µA (ICBO)
100 @ 150mA, 10V
400mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46-3
2N5581
Microsemi Corporation

TRANS NPN 50V 0.8A TO46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46 (TO-206AB)
패키지: TO-206AB, TO-46-3 Metal Can
재고5,424
800mA
50V
1V @ 50mA, 500mA
10µA (ICBO)
40 @ 150mA, 10V
500mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46 (TO-206AB)
2N2906AUB
Microsemi Corporation

TRANS PNP 60V 0.6A

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
패키지: 3-SMD, No Lead
재고6,736
600mA
60V
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2N2222AL
Microsemi Corporation

TRANS NPN 50V 0.8A TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: TO-206AA, TO-18-3 Metal Can
재고5,552
800mA
50V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
2N930A
Microsemi Corporation

TRANS NPN 45V 0.03A TO18

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,280
-
-
-
-
-
-
-
-
-
-
-
JAN2N5581
Microsemi Corporation

TRANS NPN 50V 0.8A TO46

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46 (TO-206AB)
패키지: TO-206AB, TO-46-3 Metal Can
재고6,272
800mA
50V
1V @ 50mA, 500mA
10µA (ICBO)
40 @ 150mA, 10V
500mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46 (TO-206AB)
JANTXV2N2218
Microsemi Corporation

TRANS NPN 30V 0.8A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
패키지: TO-205AD, TO-39-3 Metal Can
재고3,232
800mA
30V
1.6V @ 50mA, 500mA
10nA
40 @ 150mA, 10V
800mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
hot 2N930
Microsemi Corporation

TRANS NPN 45V 0.03A TO18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 2nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: TO-206AA, TO-18-3 Metal Can
재고16,488
30mA
45V
1V @ 500µA, 10mA
2nA
100 @ 10µA, 5V
300mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
JANTX2N2218
Microsemi Corporation

TRANS NPN 30V 0.8A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
패키지: TO-205AD, TO-39-3 Metal Can
재고6,624
800mA
30V
1.6V @ 50mA, 500mA
10nA
40 @ 150mA, 10V
800mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
JANTXV2N2907A
Microsemi Corporation

TRANS PNP 60V 0.6A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: TO-206AA, TO-18-3 Metal Can
재고7,104
600mA
60V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
JANTXV2N2222A
Microsemi Corporation

TRANS NPN 50V 0.8A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: TO-206AA, TO-18-3 Metal Can
재고3,504
800mA
50V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
hot JAN2N2222A
Microsemi Corporation

TRANS NPN 50V 0.8A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-218
패키지: TO-206AA, TO-18-3 Metal Can
재고4,160
800mA
50V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-218
JAN2N2907AL
Microsemi Corporation

TRANS PNP 60V 0.6A 4UA

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
패키지: 4-SMD, No Lead
재고6,064
600mA
60V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Surface Mount
4-SMD, No Lead
UA
hot JAN2N2907A
Microsemi Corporation

TRANS PNP 60V 0.6A TO18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: TO-206AA, TO-18-3 Metal Can
재고30,516
600mA
60V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
JAN2N2218
Microsemi Corporation

TRANS NPN 30V 0.8A TO39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
패키지: TO-205AD, TO-39-3 Metal Can
재고6,560
800mA
30V
1.6V @ 50mA, 500mA
10nA
40 @ 150mA, 10V
800mW
-
-55°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39 (TO-205AD)
hot 2N2222A
Microsemi Corporation

TRANS NPN 50V 0.8A TO-18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: TO-206AA, TO-18-3 Metal Can
재고746,424
800mA
50V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
2N2907AL
Microsemi Corporation

TRANS PNP 60V 0.6A TO-18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: TO-206AA, TO-18-3 Metal Can
재고6,960
600mA
60V
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
hot 2N2369A
Microsemi Corporation

TRANS NPN 15V TO18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: TO-206AA, TO-18-3 Metal Can
재고42,996
-
15V
450mV @ 10mA, 100mA
400nA
20 @ 100mA, 1V
360mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
hot JANTX2N3792
Microsemi Corporation

TRANS PNP 80V 10A TO-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
  • Power - Max: 5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
패키지: TO-204AA, TO-3
재고12,192
10A
80V
2.5V @ 2A, 10A
5mA
30 @ 3A, 2V
5W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-204AA, TO-3
TO-3
JANTX2N5665
Microsemi Corporation

TRANS NPN 300V 5A TO-66

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
  • Current - Collector Cutoff (Max): 200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
  • Power - Max: 2.5W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: -
패키지: TO-213AA, TO-66-2
재고7,552
5A
300V
1V @ 1A, 5A
200nA
25 @ 1A, 5V
2.5W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-213AA, TO-66-2
-
JANTXV2N3637
Microsemi Corporation

TRANS PNP 175V 1A TO-39

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 175V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
패키지: TO-205AD, TO-39-3 Metal Can
재고7,184
1A
175V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
JAN2N4150
Microsemi Corporation

TRANS NPN 70V 10A TO-5

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package: TO-5
패키지: TO-205AA, TO-5-3 Metal Can
재고4,560
10A
70V
2.5V @ 1A, 10A
10µA
40 @ 5A, 5V
1W
-
-65°C ~ 200°C (TJ)
Through Hole
TO-205AA, TO-5-3 Metal Can
TO-5