페이지 14 - Nexperia USA Inc. 제품

부품 번호	제조업체	설명	패키지	재고
BUK964R2-60E,118	Nexperia USA Inc.	MOSFET N-CH 60V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 11380pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,048
PSMN1R6-40YLC:115	Nexperia USA Inc.	MOSFET N-CH 40V 100A POWERSO8-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7790pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 288W (Tc) Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	패키지: SOT-1023, 4-LFPAK	재고2,992
PSMN017-80PS,127	Nexperia USA Inc.	MOSFET N-CH 80V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고13,302
PSMN2R6-30YLC,115	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2435pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	패키지: SC-100, SOT-669	재고15,954
PBSS4560PA,115	Nexperia USA Inc.	TRANS NPN 60V 6A SOT1061 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 290mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2A, 2V Power - Max: 2.1W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Supplier Device Package: 3-HUSON (2x2)	패키지: 3-UDFN	재고7,024
PBSS5250T,215	Nexperia USA Inc.	TRANS PNP 50V 2A SOT23 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 480mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고5,888
BC857BW,135	Nexperia USA Inc.	TRANS PNP 45V 0.1A SOT323 Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고80,802
PDTC144WM,315	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW SOT883 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: DFN1006-3	패키지: SC-101, SOT-883	재고7,696
PUMD3,135	Nexperia USA Inc.	TRANS PREBIAS NPN/PNP 6TSSOP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고3,216
PZU13B3,115	Nexperia USA Inc.	DIODE ZENER 13V 310MW SOD323F Voltage - Zener (Nom) (Vz): 13V Tolerance: ±2% Power - Max: 310mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 100nA @ 10V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: SC-90, SOD-323F	재고6,000
BZV85-C68,113	Nexperia USA Inc.	DIODE ZENER 68V 1.3W DO41 Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5% Power - Max: 1.3W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 50nA @ 48V Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41	패키지: DO-204AL, DO-41, Axial	재고7,472
BZT52-C15J	Nexperia USA Inc.	DIODE ZENER 14.7V 350MW SOD123 Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±6.1% Power - Max: 350mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 50nA @ 10.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고5,824
BZV55-B47,115	Nexperia USA Inc.	DIODE ZENER 47V 500MW SOD80C Voltage - Zener (Nom) (Vz): 47V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 50nA @ 32.9V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80C	패키지: DO-213AC, MINI-MELF, SOD-80	재고7,888
NZH3V9B,115	Nexperia USA Inc.	DIODE ZENER 3.9V 500MW SOD123F Voltage - Zener (Nom) (Vz): 3.9V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 5µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: SOD-123F	재고57,150
PMEG3010AESBYL	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1A SOD993 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.5ns Current - Reverse Leakage @ Vr: 255µA @ 20V Capacitance @ Vr, F: 86pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C (Max)	패키지: 2-XDFN	재고3,344
74HC573BQ,115	Nexperia USA Inc.	IC OCTAL D TRANSP LATCH 20DHVQFN Logic Type: D-Type Transparent Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 2 V ~ 6 V Independent Circuits: 1 Delay Time - Propagation: 14ns Current - Output High, Low: 7.8mA, 7.8mA Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 20-VFQFN Exposed Pad Supplier Device Package: 20-DHVQFN (4.5x 2.5)	패키지: 20-VFQFN Exposed Pad	재고46,314
74HCT02DB,118	Nexperia USA Inc.	IC GATE NOR 4CH 2-INP 14-SSOP Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 4mA, 4mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-SSOP Package / Case: 14-SSOP (0.209", 5.30mm Width)	패키지: 14-SSOP (0.209", 5.30mm Width)	재고4,592
74LVC1G58GS,132	Nexperia USA Inc.	IC GATE MULTI FUNCTION 6XSON Logic Type: Configurable Multiple Function Number of Circuits: 1 Number of Inputs: 3 Schmitt Trigger Input: Yes Output Type: Single-Ended Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: 6-XSON, SOT1202 (1x1)	패키지: 6-XFDFN	재고4,176
74HC244D,653	Nexperia USA Inc.	IC BUFF/DVR TRI-ST DUAL 20SOIC Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	패키지: 20-SOIC (0.295", 7.50mm Width)	재고2,288
74HC4053DB,118	Nexperia USA Inc.	IC MUX/DEMUX TRIPLE 2X1 16SSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 120 Ohm Channel-to-Channel Matching (ΔRon): 6 Ohm Voltage - Supply, Single (V+): 2 V ~ 10 V Voltage - Supply, Dual (V±): ±1.5 V ~ 5 V Switch Time (Ton, Toff) (Max): 31ns, 29ns -3db Bandwidth: 170MHz Charge Injection: - Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -60dB @ 1MHz Operating Temperature: -40°C ~ 125°C (TA) Package / Case: 16-SSOP (0.209", 5.30mm Width) Supplier Device Package: 16-SSOP	패키지: 16-SSOP (0.209", 5.30mm Width)	재고2,400
74LV1T00GWH	Nexperia USA Inc.	IC GATE NAND 1CH 2-INP TSSOP5 Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 1.6 V ~ 5.5 V Current - Quiescent (Max): 1µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1 V ~ 0.3 V Logic Level - High: 1.28 V ~ 4.6 V Max Propagation Delay @ V, Max CL: 4.8ns @ 5V, 30pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 5-TSSOP Package / Case: 5-TSSOP, SC-70-5, SOT-353	패키지: 5-TSSOP, SC-70-5, SOT-353	재고86,844
BZX585-C47-QX	Nexperia USA Inc.	BZX585-C47-Q/SOD523/SC-79 Voltage - Zener (Nom) (Vz): 47 V Tolerance: ±5% Power - Max: 300 mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523	패키지: -	Request a Quote
BZT52H-A39X	Nexperia USA Inc.	BZT52H-A39/SOD123F/SOD2 Voltage - Zener (Nom) (Vz): 39 V Tolerance: ±1% Power - Max: 375 mW Impedance (Max) (Zzt): 75 Ohms Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: -	Request a Quote
BCP51-10-QF	Nexperia USA Inc.	BCP51-10-Q/SOT223/SC-73 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 650 mW Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	재고12,000
HPZR-C10X	Nexperia USA Inc.	HPZR-C10/SOD123W/SOD2 Voltage - Zener (Nom) (Vz): 10 V Tolerance: ±5% Power - Max: 962 mW Impedance (Max) (Zzt): 18.02 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 8.5 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W	패키지: -	재고8,532
PMZ600UNEZ	Nexperia USA Inc.	MOSFET N-CH 20V 600MA DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-883 Package / Case: SC-101, SOT-883	패키지: -	재고27,690
BZX884S-C27-QYL	Nexperia USA Inc.	BZX884S-C27-Q/SOD882BD/XSON2 Voltage - Zener (Nom) (Vz): 27 V Tolerance: ±1.85% Power - Max: 365 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006BD-2	패키지: -	재고28,500
PMPB10XNX	Nexperia USA Inc.	MOSFET N-CH 30V 9.5A DFN2020MD-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1761 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	패키지: -	재고26,004

BUK964R2-60E,118

Nexperia USA Inc.

MOSFET N-CH 60V 100A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 11380pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,048

PSMN1R6-40YLC:115

Nexperia USA Inc.

MOSFET N-CH 40V 100A POWERSO8-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7790pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 288W (Tc)
Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SOT-1023, 4-LFPAK

패키지: SOT-1023, 4-LFPAK

재고2,992

PSMN017-80PS,127

Nexperia USA Inc.

MOSFET N-CH 80V TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고13,302

PSMN2R6-30YLC,115

Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2435pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

패키지: SC-100, SOT-669

재고15,954

PBSS4560PA,115

Nexperia USA Inc.

TRANS NPN 60V 6A SOT1061

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2A, 2V
Power - Max: 2.1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: 3-HUSON (2x2)

패키지: 3-UDFN

재고7,024

PBSS5250T,215

Nexperia USA Inc.

TRANS PNP 50V 2A SOT23

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 480mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고5,888

BC857BW,135

Nexperia USA Inc.

TRANS PNP 45V 0.1A SOT323

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고80,802

PDTC144WM,315

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW SOT883

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3

패키지: SC-101, SOT-883

재고7,696

PUMD3,135

Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고3,216

PZU13B3,115

Nexperia USA Inc.

DIODE ZENER 13V 310MW SOD323F

Voltage - Zener (Nom) (Vz): 13V
Tolerance: ±2%
Power - Max: 310mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 10V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F

패키지: SC-90, SOD-323F

재고6,000

BZV85-C68,113

Nexperia USA Inc.

DIODE ZENER 68V 1.3W DO41

Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±5%
Power - Max: 1.3W
Impedance (Max) (Zzt): 200 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 48V
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41

패키지: DO-204AL, DO-41, Axial

재고7,472

BZT52-C15J

Nexperia USA Inc.

DIODE ZENER 14.7V 350MW SOD123

Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.1%
Power - Max: 350mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 10.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고5,824

BZV55-B47,115

Nexperia USA Inc.

DIODE ZENER 47V 500MW SOD80C

Voltage - Zener (Nom) (Vz): 47V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 170 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 32.9V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C

패키지: DO-213AC, MINI-MELF, SOD-80

재고7,888

NZH3V9B,115

Nexperia USA Inc.

DIODE ZENER 3.9V 500MW SOD123F

Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F

패키지: SOD-123F

재고57,150

PMEG3010AESBYL

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD993

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5ns
Current - Reverse Leakage @ Vr: 255µA @ 20V
Capacitance @ Vr, F: 86pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)

패키지: 2-XDFN

재고3,344

74HC573BQ,115

Nexperia USA Inc.

IC OCTAL D TRANSP LATCH 20DHVQFN

Logic Type: D-Type Transparent Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 2 V ~ 6 V
Independent Circuits: 1
Delay Time - Propagation: 14ns
Current - Output High, Low: 7.8mA, 7.8mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 20-VFQFN Exposed Pad
Supplier Device Package: 20-DHVQFN (4.5x 2.5)

패키지: 20-VFQFN Exposed Pad

재고46,314

74HCT02DB,118

Nexperia USA Inc.

IC GATE NOR 4CH 2-INP 14-SSOP

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 4mA, 4mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SSOP
Package / Case: 14-SSOP (0.209", 5.30mm Width)

패키지: 14-SSOP (0.209", 5.30mm Width)

재고4,592

74LVC1G58GS,132

Nexperia USA Inc.

IC GATE MULTI FUNCTION 6XSON

Logic Type: Configurable Multiple Function
Number of Circuits: 1
Number of Inputs: 3
Schmitt Trigger Input: Yes
Output Type: Single-Ended
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: 6-XSON, SOT1202 (1x1)

패키지: 6-XFDFN

재고4,176

74HC244D,653

Nexperia USA Inc.

IC BUFF/DVR TRI-ST DUAL 20SOIC

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO

패키지: 20-SOIC (0.295", 7.50mm Width)

재고2,288

74HC4053DB,118

Nexperia USA Inc.

IC MUX/DEMUX TRIPLE 2X1 16SSOP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 120 Ohm
Channel-to-Channel Matching (ΔRon): 6 Ohm
Voltage - Supply, Single (V+): 2 V ~ 10 V
Voltage - Supply, Dual (V±): ±1.5 V ~ 5 V
Switch Time (Ton, Toff) (Max): 31ns, 29ns
-3db Bandwidth: 170MHz
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Crosstalk: -60dB @ 1MHz
Operating Temperature: -40°C ~ 125°C (TA)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 16-SSOP

패키지: 16-SSOP (0.209", 5.30mm Width)

재고2,400

74LV1T00GWH

Nexperia USA Inc.

IC GATE NAND 1CH 2-INP TSSOP5

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 1.6 V ~ 5.5 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1 V ~ 0.3 V
Logic Level - High: 1.28 V ~ 4.6 V
Max Propagation Delay @ V, Max CL: 4.8ns @ 5V, 30pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

재고86,844

BZX585-C47-QX

Nexperia USA Inc.

BZX585-C47-Q/SOD523/SC-79

Voltage - Zener (Nom) (Vz): 47 V
Tolerance: ±5%
Power - Max: 300 mW
Impedance (Max) (Zzt): 170 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523

패키지: -

Request a Quote

BZT52H-A39X

Nexperia USA Inc.

BZT52H-A39/SOD123F/SOD2

Voltage - Zener (Nom) (Vz): 39 V
Tolerance: ±1%
Power - Max: 375 mW
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F

패키지: -

Request a Quote

BCP51-10-QF

Nexperia USA Inc.

BCP51-10-Q/SOT223/SC-73

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 650 mW
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

재고12,000

HPZR-C10X

Nexperia USA Inc.

HPZR-C10/SOD123W/SOD2

Voltage - Zener (Nom) (Vz): 10 V
Tolerance: ±5%
Power - Max: 962 mW
Impedance (Max) (Zzt): 18.02 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 8.5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W

패키지: -

재고8,532

PMZ600UNEZ

Nexperia USA Inc.

MOSFET N-CH 20V 600MA DFN1006-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-883
Package / Case: SC-101, SOT-883

패키지: -

재고27,690

BZX884S-C27-QYL

Nexperia USA Inc.

BZX884S-C27-Q/SOD882BD/XSON2

Voltage - Zener (Nom) (Vz): 27 V
Tolerance: ±1.85%
Power - Max: 365 mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006BD-2

패키지: -

재고28,500

PMPB10XNX

Nexperia USA Inc.

MOSFET N-CH 30V 9.5A DFN2020MD-6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1761 pF @ 15 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 9.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN2020MD-6
Package / Case: 6-UDFN Exposed Pad

패키지: -

재고26,004