Nexperia USA Inc. 제품

PMV130ENEA/DG/B2R

Nexperia USA Inc.

MOSFET SS TO-236AB

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

PMXB40UNE

Nexperia USA Inc.

MOSFET N-CH 12V 3.2A 3DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 556pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN1010D-3
• Package / Case: 3-XDFN Exposed Pad

패키지: 3-XDFN Exposed Pad

BUK9Y11-80EX

Nexperia USA Inc.

MOSFET N-CH 80V 84A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 6506pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 194W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

패키지: SC-100, SOT-669

BUK9M43-100EX

Nexperia USA Inc.

MOSFET N-CH 100V 25A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 20.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2309pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 43 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

패키지: SOT-1210, 8-LFPAK33 (5-Lead)

PMDT290UCE,115

Nexperia USA Inc.

MOSFET N/P-CH 20V SOT666

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
• Power - Max: 500mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-666

패키지: SOT-563, SOT-666

BCW30,215

Nexperia USA Inc.

TRANS PNP 32V 0.1A SOT23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 32V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

PZU2.7B2L,315

Nexperia USA Inc.

DIODE ZENER 2.7V 250MW SOD882

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±2%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006-2

패키지: SOD-882

BZX585-C2V4,135

Nexperia USA Inc.

DIODE ZENER 2.4V 300MW SOD523

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

패키지: SC-79, SOD-523

BZX84-B51,215

Nexperia USA Inc.

DIODE ZENER 51V 250MW SOT23

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±2%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 180 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 35.7V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

BZX384-B20,115

Nexperia USA Inc.

DIODE ZENER 20V 300MW SOD323

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

TDZ15J,115

Nexperia USA Inc.

DIODE ZENER 15V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

패키지: SC-90, SOD-323F

BZV55-C5V6,115

Nexperia USA Inc.

DIODE ZENER 5.6V 500MW SOD80C

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80C

패키지: DO-213AC, MINI-MELF, SOD-80

BAS16J,135

Nexperia USA Inc.

DIODE GEN PURP 100V 250MA SOD323

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F
• Operating Temperature - Junction: 150°C (Max)

패키지: SC-90, SOD-323F

BC817DPNF

Nexperia USA Inc.

BC817DPN/SOT457/SC-74

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

74CBTLV3257DS,118

Nexperia USA Inc.

IC MUX/DEMUX DUAL 1OF4 16SSOP

• Type: Multiplexer/Demultiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-SSOP

패키지: 16-SSOP (0.154", 3.90mm Width)

74LVC2G02GD,125

Nexperia USA Inc.

IC GATE NOR 2CH 2-INP 8-XSON

• Logic Type: NOR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-XSON, SOT996-2 (2x3)
• Package / Case: 8-XFDFN

패키지: 8-XFDFN

74AHCT02BQ,115

Nexperia USA Inc.

IC GATE NOR 4CH 2-INP 14-DHVQFN

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-DHVQFN (2.5x3)
• Package / Case: 14-VFQFN Exposed Pad

패키지: 14-VFQFN Exposed Pad

74LVC3G34GM,125

Nexperia USA Inc.

IC BUFFER TRPL N-INVERT 8XQFN

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 3
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-XFQFN Exposed Pad
• Supplier Device Package: 8-XQFN (1.6x1.6)

패키지: 8-XFQFN Exposed Pad

74ABT245PW,112

Nexperia USA Inc.

IC TRANSCVR TRI-ST 8BIT 20TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 64mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

74LV4051D,112

Nexperia USA Inc.

IC MUX/DEMUX 8X1 16SOIC

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 2 Ohm
• Voltage - Supply, Single (V+): 1 V ~ 6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 34ns, 29ns
• -3db Bandwidth: 200MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 2µA
• Crosstalk: -60dB @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

패키지: 16-SOIC (0.154", 3.90mm Width)

BSS138AKS-QX

Nexperia USA Inc.

MOS DISCRETES

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

BCP53H-QX

Nexperia USA Inc.

BCP53H-Q/SOT223/SC-73

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 725 mW
• Frequency - Transition: 140MHz
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

패키지: -

Request a Quote

PDTC143EQB-QZ

Nexperia USA Inc.

TRANS PREBIAS NPN 50V 0.1A 3DFN

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 230 MHz
• Power - Max: -
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1110D-3

패키지: -

SZMM3Z6V2T1GX

Nexperia USA Inc.

SZMM3Z6V2T1G/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 6.2 V
• Tolerance: ±5%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 3 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: -

PDZ27B-QZ

Nexperia USA Inc.

DIODE ZENER 27V 400MW SOD323

• Voltage - Zener (Nom) (Vz): 27 V
• Tolerance: ±2%
• Power - Max: 400 mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 21 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: -

Request a Quote

74LVC1G14GM-Q100X

Nexperia USA Inc.

IC INVERT SCHMITT 1CH 1INP 6XSON

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 1.65V ~ 5.5V
• Current - Quiescent (Max): 4 µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.46V ~ 1.58V
• Logic Level - High: 1.14V ~ 2.79V
• Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-XSON, SOT886 (1.45x1)
• Package / Case: 6-XFDFN

패키지: -

PBHV2160Z-QX

Nexperia USA Inc.

PBHV2160Z-Q/SOT223/SC-73

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Vce Saturation (Max) @ Ib, Ic: 125mV @ 6mA, 30mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 10V
• Power - Max: 650 mW
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

패키지: -

Request a Quote

PMN55ENEX

Nexperia USA Inc.

MOSFET N-CH 60V 4.5A 6TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 560mW (Ta), 6.25W (Tc)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

패키지: -