Nexperia USA Inc. 제품

PSMN2R8-40PS,127

Nexperia USA Inc.

MOSFET N-CH 40V TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4491pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 211W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

BC860BW,115

Nexperia USA Inc.

TRANS PNP 45V 0.1A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

PBSS3540MB,315

Nexperia USA Inc.

TRANS PNP 40V 0.5A 3DFN

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 50mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-XFDFN
• Supplier Device Package: 3-DFN1006B (0.6x1)

패키지: 3-XFDFN

BC817-40QAZ

Nexperia USA Inc.

TRANS NPN 45V 0.5A DFN1010D-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3

패키지: 3-XDFN Exposed Pad

PUMT1,115

Nexperia USA Inc.

TRANS 2PNP 40V 0.1A 6TSSOP

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP, SC-88

패키지: 6-TSSOP, SC-88, SOT-363

PQMH10Z

Nexperia USA Inc.

TRANS NPN/NPN RET 6DFN

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 230MHz
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: DFN1010B-6

패키지: 6-XFDFN Exposed Pad

BZT52-C30X

Nexperia USA Inc.

DIODE ZENER 30V 350MW SOD123

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±6.7%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

PMEG6010ER,115

Nexperia USA Inc.

DIODE SCHOTTKY 60V 1A SOD123W

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: CFP3
• Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123W

BAT54SW,115

Nexperia USA Inc.

DIODE ARRAY SCHOTTKY 30V SOT323

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

74LVT02PW,118

Nexperia USA Inc.

IC GATE NOR 4CH 2-INP 14-TSSOP

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Current - Quiescent (Max): -
• Current - Output High, Low: 20mA, 32mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: 14-TSSOP (0.173", 4.40mm Width)

74AHCT3G14DC-Q100H

Nexperia USA Inc.

IC SCHMITT TRIG TRPL INV 8VSSOP

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: Schmitt Trigger
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5 V ~ 0.6 V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSSOP, US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

패키지: 8-VFSOP (0.091", 2.30mm Width)

74LVC3GU04DP,125

Nexperia USA Inc.

IC TRIPLE INVERTER 8TSSOP

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

74AUP1G57GS,132

Nexperia USA Inc.

IC GATE CONFIG MULTI-FUNC 6XSON

• Logic Type: Configurable Multiple Function
• Number of Circuits: 1
• Number of Inputs: 3
• Schmitt Trigger Input: Yes
• Output Type: Single-Ended
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT1202 (1x1)

패키지: 6-XFDFN

74AUP1G74GM,125

Nexperia USA Inc.

IC D-TYPE POS TRG SNGL 8QXFN

• Function: Set(Preset) and Reset
• Type: D-Type
• Output Type: Differential
• Number of Elements: 1
• Number of Bits per Element: 1
• Clock Frequency: 315MHz
• Max Propagation Delay @ V, Max CL: 5.8ns @ 3.3V, 30pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Iq): 500nA
• Input Capacitance: 0.6pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-XFQFN Exposed Pad

패키지: 8-XFQFN Exposed Pad

74LVC1G07GW,165

Nexperia USA Inc.

IC BUFF OPEN DRAIN N-INV 5TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Open Drain
• Current - Output High, Low: -, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: 5-TSSOP

패키지: 5-TSSOP, SC-70-5, SOT-353

74ALVC245PW,112

Nexperia USA Inc.

IC TRANSCVR TRI-ST 8BIT 20TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

74LVT16240ADGG,118

Nexperia USA Inc.

IC BUFF DVR TRI-ST 16BIT 48TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 64mA
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

패키지: 48-TFSOP (0.240", 6.10mm Width)

IP4856CX25/CZ

Nexperia USA Inc.

IC MEMORY CARD TRANSLATOR

• Applications: Memory Card
• Interface: -
• Voltage - Supply: 2.8 V ~ 3.6 V
• Package / Case: 25-UFBGA, WLCSP
• Supplier Device Package: 25-WLCSP (2.04x2.04)
• Mounting Type: Surface Mount

패키지: 25-UFBGA, WLCSP

74HC4052D-Q100,118

Nexperia USA Inc.

IC MUX/DEMUX DUAL 4CH 16SOIC

• Switch Circuit: SP4T
• Multiplexer/Demultiplexer Circuit: 4:1
• Number of Circuits: 2
• On-State Resistance (Max): 150 Ohm
• Channel-to-Channel Matching (ΔRon): 6 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 10 V
• Voltage - Supply, Dual (V±): ±1.5 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 58ns, 48ns
• -3db Bandwidth: 180MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 2µA
• Crosstalk: -60dB @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

패키지: 16-SOIC (0.154", 3.90mm Width)

PTVS54VS1UTR,115

Nexperia USA Inc.

TVS DIODE 54VWM 87.1VC SOD123W

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 4.6A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 185°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: CFP3

패키지: SOD-123W

PESD5V0X1UB,135

Nexperia USA Inc.

TVS DIODE 5VWM 8VC SOD523

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: 8V (Typ)
• Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 0.95pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

패키지: SC-79, SOD-523

BCV49-QX

Nexperia USA Inc.

BCV49-Q/SOT89/MPT3

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1.3 W
• Frequency - Transition: 220MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

패키지: -

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BZX884S-B6V8YL

Nexperia USA Inc.

DIODE ZENER 6.8V 365MW 2DFN

• Voltage - Zener (Nom) (Vz): 6.8 V
• Tolerance: ±2.06%
• Power - Max: 365 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 2 µA @ 4 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2

패키지: -

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MMBZ18VA-TR

Nexperia USA Inc.

MMBZ18VA-T/SOT23/TO-236AB

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

BUK6Y12-30PX

Nexperia USA Inc.

MOSFET P-CH 30V 67A LFPAK56

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 67A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 106W (Ta)
• Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

패키지: -

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BZX8850S-C6V2YL

Nexperia USA Inc.

BZX8850S-C6V2/SOD882BD/XSON2

• Voltage - Zener (Nom) (Vz): 6.2 V
• Tolerance: ±5%
• Power - Max: 365 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 5 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2

패키지: -

PMBT3904-QR

Nexperia USA Inc.

PMBT3904-Q/SOT23/TO-236AB

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200 mA
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250 mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: -

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PMPB07R0UNX

Nexperia USA Inc.

MOSFET N-CH 20V 11.6A DFN2020M-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 11.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020MD-6
• Package / Case: 6-UDFN Exposed Pad

패키지: -