페이지 311 - Nexperia USA Inc. 제품

부품 번호	제조업체	설명	패키지	재고
BC847A,215	Nexperia USA Inc.	TRANS NPN 45V 0.1A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고7,616
PDTA115EU,115	Nexperia USA Inc.	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	패키지: SC-70, SOT-323	재고2,512
PUMD13,115	Nexperia USA Inc.	TRANS PREBIAS NPN/PNP 6TSSOP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고107,580
BZV55-B11,135	Nexperia USA Inc.	DIODE ZENER 11V 500MW SOD80C Voltage - Zener (Nom) (Vz): 11V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100nA @ 8V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 200°C Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80C	패키지: DO-213AC, MINI-MELF, SOD-80	재고4,400
BZT52-C9V1J	Nexperia USA Inc.	DIODE ZENER 9.05V 350MW SOD123 Voltage - Zener (Nom) (Vz): 9.05V Tolerance: ±6.1% Power - Max: 350mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 500nA @ 6V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고2,992
PMEG060V050EPDAZ	Nexperia USA Inc.	DIODE SCHOTTKY 60V 5A CFP15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 560mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12ns Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: 175pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: CFP15 Operating Temperature - Junction: 175°C (Max)	패키지: 3-SMD, Flat Leads	재고3,936
PMEG4002ELD,315	Nexperia USA Inc.	DIODE SCHOTTKY 40V 200MA SOD882D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 10µA @ 40V Capacitance @ Vr, F: 20pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: 2-DFN1006D (0.6x1.0) Operating Temperature - Junction: 150°C (Max)	패키지: 2-XDFN	재고59,892
PMEG4030EP,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 3A SOD128 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: 350pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: CFP5 Operating Temperature - Junction: 150°C (Max)	패키지: SOD-128	재고3,840
74LVC4245ADB,112	Nexperia USA Inc.	IC TRANSCVR TRI-ST DL 24SSOP Translator Type: Voltage Level Channel Type: Bidirectional Number of Circuits: 1 Channels per Circuit: 8 Voltage - VCCA: 1.5V ~ 5.5V Voltage - VCCB: 1.5V ~ 3.6V Input Signal: - Output Signal: - Output Type: Tri-State, Non-Inverted Data Rate: - Operating Temperature: -40°C ~ 125°C (TA) Features: - Mounting Type: Surface Mount Package / Case: 24-SSOP (0.209", 5.30mm Width) Supplier Device Package: 24-SSOP	패키지: 24-SSOP (0.209", 5.30mm Width)	재고143,868
74LVC2G38GS,115	Nexperia USA Inc.	IC GATE NAND 2CH 2-INP 8-XSON Logic Type: NAND Gate Number of Circuits: 2 Number of Inputs: 2 Features: Open Drain Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 4µA Current - Output High, Low: -, 32mA Logic Level - Low: 0.7 V ~ 0.8 V Logic Level - High: 1.7 V ~ 2 V Max Propagation Delay @ V, Max CL: 3.3ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 8-XSON, SOT1203 (1.35x1) Package / Case: 8-XFDFN	패키지: 8-XFDFN	재고5,472
74HC1G86GW-Q100H	Nexperia USA Inc.	IC GATE XOR 1CH 2-INP 5-TSSOP Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 20µA Current - Output High, Low: 2.6mA, 2.6mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 5-TSSOP Package / Case: 5-TSSOP, SC-70-5, SOT-353	패키지: 5-TSSOP, SC-70-5, SOT-353	재고6,048
74LVC1G57GM,132	Nexperia USA Inc.	IC CONFIG MULTI-FUNC GATE 6XSON Logic Type: Configurable Multiple Function Number of Circuits: 1 Number of Inputs: 3 Schmitt Trigger Input: Yes Output Type: Single-Ended Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: 6-XSON, SOT886 (1.45x1)	패키지: 6-XFDFN	재고4,464
74LVC16374ABX,518	Nexperia USA Inc.	IC D-TYPE POS TRG DUAL 60HXQFN Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 2 Number of Bits per Element: 8 Clock Frequency: 300MHz Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Iq): 20µA Input Capacitance: 5pF Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 60-XFQFN Dual Rows, Exposed Pad	패키지: 60-XFQFN Dual Rows, Exposed Pad	재고2,992
74AHC273D-Q100J	Nexperia USA Inc.	IC D-TYPE POS TRG SNGL 20SOIC Function: Master Reset Type: D-Type Output Type: Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 110MHz Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Iq): 4µA Input Capacitance: 3pF Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width)	패키지: 20-SOIC (0.295", 7.50mm Width)	재고4,848
74LVC1G126GXH	Nexperia USA Inc.	IC BUS BUFF/LINE DVR 3ST Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-X2SON (0.80x0.80)	패키지: 4-XFDFN Exposed Pad	재고7,808
PESD3V3S1BLYL	Nexperia USA Inc.	PESD3V3S1BL/SOD882/SOD2 Type: - Unidirectional Channels: - Bidirectional Channels: - Voltage - Reverse Standoff (Typ): - Voltage - Breakdown (Min): - Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: - Applications: - Capacitance @ Frequency: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,436
PESD5V0X1BT,215	Nexperia USA Inc.	TVS DIODE 5VWM SOT23 Type: Zener Unidirectional Channels: 2 Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: Automotive Capacitance @ Frequency: 0.9pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	패키지: TO-236-3, SC-59, SOT-23-3	재고47,004
BCP53-16-QF	Nexperia USA Inc.	BCP53-16-Q/SOT223/SC-73 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 650 mW Frequency - Transition: 145MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	재고11,700
BC857C-QVL	Nexperia USA Inc.	TRANS PNP 45V 0.1A TO236AB Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	패키지: -	Request a Quote
RP510L181H-TR	Nexperia USA Inc.	IC REG 4A Function: - Output Configuration: - Topology: - Output Type: - Number of Outputs: - Voltage - Input (Min): - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Frequency - Switching: - Synchronous Rectifier: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
BZX884S-C9V1YL	Nexperia USA Inc.	BZX884S-C9V1/SOD882BD/XSON2 Voltage - Zener (Nom) (Vz): 9.05 V Tolerance: ±6.08% Power - Max: 365 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006BD-2	패키지: -	Request a Quote
HPZR-C10-QX	Nexperia USA Inc.	HPZR-C10-Q/SOD123W/SOD2 Voltage - Zener (Nom) (Vz): 10 V Tolerance: ±5% Power - Max: 682 mW Impedance (Max) (Zzt): 18.02 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 8.5 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W	패키지: -	재고9,000
PNE20060EPE-QZ	Nexperia USA Inc.	DIODE GEN PURP 200V 6A CFP15B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	패키지: -	재고28,941
PMH1200UPEH	Nexperia USA Inc.	MOSFET P-CH 30V 520MA DFN0606-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 520mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN0606-3 Package / Case: 3-XFDFN	패키지: -	재고106,824
BUK9M8R5-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 40A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 59W (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	패키지: -	재고49,464
BC54PAS-QX	Nexperia USA Inc.	BC54PAS-Q/SOT1061/HUSON3 Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Power - Max: 420 mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Supplier Device Package: DFN2020D-3	패키지: -	Request a Quote
PMEG100T120ELPEZ	Nexperia USA Inc.	DIODE SCHOTTKY 100V 12A CFP15B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28 ns Current - Reverse Leakage @ Vr: 6 µA @ 100 V Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	패키지: -	재고15,000
BC856BQBZ	Nexperia USA Inc.	SMALL SIGNAL BIPOLAR IN DFN PACK Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 340 mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1110D-3	패키지: -	재고14,970

BC847A,215

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고7,616

PDTA115EU,115

Nexperia USA Inc.

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

패키지: SC-70, SOT-323

재고2,512

PUMD13,115

Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고107,580

BZV55-B11,135

Nexperia USA Inc.

DIODE ZENER 11V 500MW SOD80C

Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 200°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C

패키지: DO-213AC, MINI-MELF, SOD-80

재고4,400

BZT52-C9V1J

Nexperia USA Inc.

DIODE ZENER 9.05V 350MW SOD123

Voltage - Zener (Nom) (Vz): 9.05V
Tolerance: ±6.1%
Power - Max: 350mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 6V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고2,992

PMEG060V050EPDAZ

Nexperia USA Inc.

DIODE SCHOTTKY 60V 5A CFP15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12ns
Current - Reverse Leakage @ Vr: 400µA @ 60V
Capacitance @ Vr, F: 175pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)

패키지: 3-SMD, Flat Leads

재고3,936

PMEG4002ELD,315

Nexperia USA Inc.

DIODE SCHOTTKY 40V 200MA SOD882D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 10µA @ 40V
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: 2-DFN1006D (0.6x1.0)
Operating Temperature - Junction: 150°C (Max)

패키지: 2-XDFN

재고59,892

PMEG4030EP,115

Nexperia USA Inc.

DIODE SCHOTTKY 40V 3A SOD128

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: 350pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: CFP5
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-128

재고3,840

74LVC4245ADB,112

Nexperia USA Inc.

IC TRANSCVR TRI-ST DL 24SSOP

Translator Type: Voltage Level
Channel Type: Bidirectional
Number of Circuits: 1
Channels per Circuit: 8
Voltage - VCCA: 1.5V ~ 5.5V
Voltage - VCCB: 1.5V ~ 3.6V
Input Signal: -
Output Signal: -
Output Type: Tri-State, Non-Inverted
Data Rate: -
Operating Temperature: -40°C ~ 125°C (TA)
Features: -
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 24-SSOP

패키지: 24-SSOP (0.209", 5.30mm Width)

재고143,868

74LVC2G38GS,115

Nexperia USA Inc.

IC GATE NAND 2CH 2-INP 8-XSON

Logic Type: NAND Gate
Number of Circuits: 2
Number of Inputs: 2
Features: Open Drain
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 4µA
Current - Output High, Low: -, 32mA
Logic Level - Low: 0.7 V ~ 0.8 V
Logic Level - High: 1.7 V ~ 2 V
Max Propagation Delay @ V, Max CL: 3.3ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 8-XSON, SOT1203 (1.35x1)
Package / Case: 8-XFDFN

패키지: 8-XFDFN

재고5,472

74HC1G86GW-Q100H

Nexperia USA Inc.

IC GATE XOR 1CH 2-INP 5-TSSOP

Logic Type: XOR (Exclusive OR)
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 20µA
Current - Output High, Low: 2.6mA, 2.6mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 5-TSSOP
Package / Case: 5-TSSOP, SC-70-5, SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

재고6,048

74LVC1G57GM,132

Nexperia USA Inc.

IC CONFIG MULTI-FUNC GATE 6XSON

Logic Type: Configurable Multiple Function
Number of Circuits: 1
Number of Inputs: 3
Schmitt Trigger Input: Yes
Output Type: Single-Ended
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: 6-XSON, SOT886 (1.45x1)

패키지: 6-XFDFN

재고4,464

74LVC16374ABX,518

Nexperia USA Inc.

IC D-TYPE POS TRG DUAL 60HXQFN

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 2
Number of Bits per Element: 8
Clock Frequency: 300MHz
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Iq): 20µA
Input Capacitance: 5pF
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-XFQFN Dual Rows, Exposed Pad

패키지: 60-XFQFN Dual Rows, Exposed Pad

재고2,992

74AHC273D-Q100J

Nexperia USA Inc.

IC D-TYPE POS TRG SNGL 20SOIC

Function: Master Reset
Type: D-Type
Output Type: Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 110MHz
Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 3pF
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)

패키지: 20-SOIC (0.295", 7.50mm Width)

재고4,848

74LVC1G126GXH

Nexperia USA Inc.

IC BUS BUFF/LINE DVR 3ST

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-X2SON (0.80x0.80)

패키지: 4-XFDFN Exposed Pad

재고7,808

PESD3V3S1BLYL

Nexperia USA Inc.

PESD3V3S1BL/SOD882/SOD2

Type: -
Unidirectional Channels: -
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): -
Voltage - Breakdown (Min): -
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: -
Applications: -
Capacitance @ Frequency: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,436

PESD5V0X1BT,215

Nexperia USA Inc.

TVS DIODE 5VWM SOT23

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: 0.9pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

패키지: TO-236-3, SC-59, SOT-23-3

재고47,004

BCP53-16-QF

Nexperia USA Inc.

BCP53-16-Q/SOT223/SC-73

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 650 mW
Frequency - Transition: 145MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: -

재고11,700

BC857C-QVL

Nexperia USA Inc.

TRANS PNP 45V 0.1A TO236AB

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

패키지: -

Request a Quote

RP510L181H-TR

Nexperia USA Inc.

IC REG 4A

Function: -
Output Configuration: -
Topology: -
Output Type: -
Number of Outputs: -
Voltage - Input (Min): -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Current - Output: -
Frequency - Switching: -
Synchronous Rectifier: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

BZX884S-C9V1YL

Nexperia USA Inc.

BZX884S-C9V1/SOD882BD/XSON2

Voltage - Zener (Nom) (Vz): 9.05 V
Tolerance: ±6.08%
Power - Max: 365 mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006BD-2

패키지: -

Request a Quote

HPZR-C10-QX

Nexperia USA Inc.

HPZR-C10-Q/SOD123W/SOD2

Voltage - Zener (Nom) (Vz): 10 V
Tolerance: ±5%
Power - Max: 682 mW
Impedance (Max) (Zzt): 18.02 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 8.5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W

패키지: -

재고9,000

PNE20060EPE-QZ

Nexperia USA Inc.

DIODE GEN PURP 200V 6A CFP15B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C

패키지: -

재고28,941

PMH1200UPEH

Nexperia USA Inc.

MOSFET P-CH 30V 520MA DFN0606-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 520mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 410mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN0606-3
Package / Case: 3-XFDFN

패키지: -

재고106,824

BUK9M8R5-40HX

Nexperia USA Inc.

MOSFET N-CH 40V 40A LFPAK33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 59W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK33
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

패키지: -

재고49,464

BC54PAS-QX

Nexperia USA Inc.

BC54PAS-Q/SOT1061/HUSON3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 420 mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Supplier Device Package: DFN2020D-3

패키지: -

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PMEG100T120ELPEZ

Nexperia USA Inc.

DIODE SCHOTTKY 100V 12A CFP15B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Current - Reverse Leakage @ Vr: 6 µA @ 100 V
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C

패키지: -

재고15,000

BC856BQBZ

Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

Transistor Type: PNP
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 340 mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1110D-3

패키지: -

재고14,970