Nexperia USA Inc. 제품

PMV50UPEVL

Nexperia USA Inc.

PMV50UPE/SOT23/TO-236AB

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

PSMN8R0-40BS,118

Nexperia USA Inc.

MOSFET N-CH 40V 77A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1262pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NX3008NBK,215

Nexperia USA Inc.

MOSFET N-CH 30V TO-236AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

BC847B/DG/B3,215

Nexperia USA Inc.

TRANS GEN PURPOSE TO-236AB

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

BST39,115

Nexperia USA Inc.

TRANS NPN 350V 0.1A SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 350V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

패키지: TO-243AA

BCX55,115

Nexperia USA Inc.

TRANS NPN 60V 1A SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1.35W
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

패키지: TO-243AA

PDTC124EMB,315

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW 3DFN

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 230MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 3-XFDFN
• Supplier Device Package: 3-DFN1006B (0.6x1)

패키지: 3-XFDFN

BZV55-B22,135

Nexperia USA Inc.

DIODE ZENER 22V 500MW SOD80C

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 15.4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80C

패키지: DO-213AC, MINI-MELF, SOD-80

BZX79-B62,113

Nexperia USA Inc.

DIODE ZENER 62V 400MW ALF2

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±2%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 215 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 43.4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

패키지: DO-204AH, DO-35, Axial

BZT52H-B3V0,115

Nexperia USA Inc.

DIODE ZENER 3V 375MW SOD123F

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±2%
• Power - Max: 375mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

패키지: SOD-123F

PMEG2015EV,115

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1.5A SOT666

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1.5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 660mV @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 15V
• Capacitance @ Vr, F: 25pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-666
• Operating Temperature - Junction: 150°C (Max)

패키지: SOT-563, SOT-666

PMEG2010EJ,115

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A SOD323F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Capacitance @ Vr, F: 80pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F
• Operating Temperature - Junction: 150°C (Max)

패키지: SC-90, SOD-323F

74AHC138BQ,115

Nexperia USA Inc.

IC 3-8 LINE DECOD/DEMUX 16DHVQFN

• Type: Decoder/Demultiplexer
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-DHVQFN (2.5x3.5)

패키지: 16-VFQFN Exposed Pad

74AHCT86D-Q100J

Nexperia USA Inc.

IC GATE XOR 4CH 2-INP 14-SO

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

패키지: 14-SOIC (0.154", 3.90mm Width)

74VHCT08PW,118

Nexperia USA Inc.

IC GATE AND 4CH 2-INP 14-TSSOP

• Logic Type: AND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: 14-TSSOP (0.173", 4.40mm Width)

74HC4040PW,118

Nexperia USA Inc.

IC 12STAGE BINARY RIPPLE 16TSSOP

• Logic Type: Binary Counter
• Direction: Up
• Number of Elements: 1
• Number of Bits per Element: 12
• Reset: Asynchronous
• Timing: -
• Count Rate: 98MHz
• Trigger Type: Negative Edge
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

패키지: 16-TSSOP (0.173", 4.40mm Width)

74LVC2G240DC,125

Nexperia USA Inc.

IC INVERTER DUAL 4-INPUT 8VSSOP

• Logic Type: Buffer, Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: 8-VSSOP, US8

패키지: 8-VFSOP (0.091", 2.30mm Width)

PMEG060T100CLPE-QZ

Nexperia USA Inc.

DIODE ARR SCHOTT 60V 5A CFP15B

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 17 ns
• Current - Reverse Leakage @ Vr: 1.8 µA @ 60 V
• Operating Temperature - Junction: 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B

패키지: -

PUMH9-QF

Nexperia USA Inc.

PUMH9-Q/SOT363/SC-88

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 230MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

패키지: -

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74LVC162245ADGVJ

Nexperia USA Inc.

IC TXRX NON-INVERT 3.6V 48TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 8
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 12mA, 12mA
• Voltage - Supply: 1.2V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: 48-TSSOP

패키지: -

74LV1T02GVH

Nexperia USA Inc.

IC GATE NOR 1CH 2-INP SC74A

• Logic Type: NOR Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.6V ~ 5.5V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.58 ~ 0.8V
• Logic Level - High: 0.94 ~ 2.1V
• Max Propagation Delay @ V, Max CL: 5.1ns @ 5V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: SC-74A
• Package / Case: SC-74A, SOT-753

패키지: -

BUK9M3R3-40HX

Nexperia USA Inc.

MOSFET N-CH 40V 80A LFPAK33

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3766 pF @ 25 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 101W (Ta)
• Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

패키지: -

PSMNR67-30YLEX

Nexperia USA Inc.

PSMNR67-30YLE/SOT1023/4 LEADS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 365A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12417 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 333W (Ta)
• Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SOT-1023, 4-LFPAK

패키지: -

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BUK9MRR-65PKK-518

Nexperia USA Inc.

MOSFET 2N-CH 65V 4.8A 20SO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 65V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
• Rds On (Max) @ Id, Vgs: 60.7mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 712pF @ 25V
• Power - Max: 3.2W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SO

패키지: -

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BZX585-B3V6-QX

Nexperia USA Inc.

BZX585-B3V6-Q/SOD523/SC-79

• Voltage - Zener (Nom) (Vz): 3.6 V
• Tolerance: ±2%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

패키지: -

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BZX884S-C22YL

Nexperia USA Inc.

BZX884S-C22/SOD882BD/XSON2

• Voltage - Zener (Nom) (Vz): 22.05 V
• Tolerance: ±5.67%
• Power - Max: 365 mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006BD-2

패키지: -

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BC847AQC-QZ

Nexperia USA Inc.

TRANS NPN 45V 0.1A DFN1412D-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 360 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1412D-3

패키지: -

BC806-16H-QR

Nexperia USA Inc.

BC806-16H-Q/SOT23/TO-236AB

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 300 mW
• Frequency - Transition: 80MHz
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

패키지: -