Nexperia USA Inc. 제품

PSMN4R2-60PLQ

Nexperia USA Inc.

MOSFET N-CH 60V 130A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8533pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 263W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

BC52-16PASX

Nexperia USA Inc.

IC TRANS PNP 1A 60 SOT1061

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 420mW
• Frequency - Transition: 145MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: DFN2020D-3

패키지: 3-SMD, No Lead

BZX84-C18/DG/B3,23

Nexperia USA Inc.

DIODE ZENER TO-236AB

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PZU10B1A,115

Nexperia USA Inc.

DIODE ZENER 10V 320MW SOD323

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±2%
• Power - Max: 320mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

BZT52-C4V3J

Nexperia USA Inc.

DIODE ZENER 4.3V 350MW SOD123

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±7%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

BZV90-C3V9,115

Nexperia USA Inc.

DIODE ZENER 3.9V 1.5W SC73

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

NZX3V6C,133

Nexperia USA Inc.

DIODE ZENER 3.6V 500MW ALF2

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

패키지: DO-204AH, DO-35, Axial

BZX84-C15,235

Nexperia USA Inc.

DIODE ZENER 15V 250MW SOT23

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

BAS16J/ZLF

Nexperia USA Inc.

DIODE SWITCHING SOD323F

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

74AUP2G157GN,115

Nexperia USA Inc.

IC MUX SGL 2INPUT LP 8-XSON

• Type: Multiplexer
• Circuit: 1 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 4mA, 4mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-XFDFN
• Supplier Device Package: 8-XSON, SOT1116 (1.2x1)

패키지: 8-XFDFN

74AHCT139D-Q100J

Nexperia USA Inc.

IC DECODER/DEMUX 2-4 16-SOIC

• Type: Decoder/Demultiplexer
• Circuit: 1 x 2:4
• Independent Circuits: 2
• Current - Output High, Low: 8mA, 8mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

패키지: 16-SOIC (0.154", 3.90mm Width)

74AHC3GU04DC-Q100H

Nexperia USA Inc.

IC INVERTER HS CMOS 8VSSOP

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.3 V ~ 1.1 V
• Logic Level - High: 1.7 V ~ 4.4 V
• Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSSOP, US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

패키지: 8-VFSOP (0.091", 2.30mm Width)

74AHCT04PW-Q100J

Nexperia USA Inc.

IC HEX INVERTER 14TSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

패키지: 14-TSSOP (0.173", 4.40mm Width)

74LVC1G38GW-Q100H

Nexperia USA Inc.

IC GATE NAND 1CH 2-INP 5-TSSOP

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: Open Drain
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: -, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 3.9ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-TSSOP
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

74AUP1G11GW,125

Nexperia USA Inc.

IC GATE AND 1CH 3-INP 6-TSSOP

• Logic Type: AND Gate
• Number of Circuits: 1
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Max): 0.5µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.7 V ~ 0.9 V
• Logic Level - High: 1.6 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSSOP
• Package / Case: 6-TSSOP, SC-88, SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

74AHC1G14GW-Q100,1

Nexperia USA Inc.

IC SCHMITT TRIGGER INV 5TSSOP

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.9 V ~ 1.65 V
• Logic Level - High: 2.2 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-TSSOP
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

74LVC16374ADGG-Q1J

Nexperia USA Inc.

IC D-TYPE POS TRG DUAL 48TSSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 2
• Number of Bits per Element: 8
• Clock Frequency: 300MHz
• Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Iq): 20µA
• Input Capacitance: 5pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)

패키지: 48-TFSOP (0.240", 6.10mm Width)

PTVS58VS1UR,115

Nexperia USA Inc.

TVS DIODE 58VWM 93.6VC SOD123W

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 58V
• Voltage - Breakdown (Min): 64.4V
• Voltage - Clamping (Max) @ Ipp: 93.6V
• Current - Peak Pulse (10/1000µs): 4.3A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: CFP3

패키지: SOD-123W

74LV1T86GXH

Nexperia USA Inc.

IC GATE XOR 1CH 2-INP X2SON5

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.1 V ~ 0.3 V
• Logic Level - High: 1.28 V ~ 4.6 V
• Max Propagation Delay @ V, Max CL: 5.1ns @ 5V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-X2SON (0.80x0.80)
• Package / Case: 5-XFDFN Exposed Pad

패키지: 5-XFDFN Exposed Pad

PMX400UPEZ

Nexperia USA Inc.

PMX400UPE/SOT8013/DFN0603-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 0.95V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
• Rds On (Max) @ Id, Vgs: 500mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN0603-3 (SOT8013)
• Package / Case: 0201 (0603 Metric)

패키지: -

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PNE20040EPE-QZ

Nexperia USA Inc.

DIODE GEN PURP 200V 4A CFP15B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 61pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

패키지: -

NHDTA123JUX

Nexperia USA Inc.

TRANS PREBIAS PNP 80V SOT323

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 150 MHz
• Power - Max: 235 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: -

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PMEG4005ET-QR

Nexperia USA Inc.

DIODE SCHOTTKY 40V 500MA TO236AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 40 V
• Capacitance @ Vr, F: 43pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB
• Operating Temperature - Junction: 150°C

패키지: -

PBHV9040Z-QF

Nexperia USA Inc.

PBHV9040Z-Q/SOT223/SC-73

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 250 mA
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Power - Max: 700 mW
• Frequency - Transition: 55MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

패키지: -

74HCT04BZZ

Nexperia USA Inc.

IC INVERTER 6CH 1-INP 14DHXQFN

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 4.5V ~ 5.5V
• Current - Quiescent (Max): 2 µA
• Current - Output High, Low: 5.2mA
• Logic Level - Low: 0.8V
• Logic Level - High: 1.6V
• Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-DHXQFN (2x2)
• Package / Case: 14-XFQFN Exposed Pad

패키지: -

BUK7S2R5-40HJ

Nexperia USA Inc.

BUK7S2R5-40H/SOT1235/LFPAK88

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 140A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3793 pF @ 25 V
• Vgs (Max): +20V, -10V
• FET Feature: -
• Power Dissipation (Max): 135W (Ta)
• Rds On (Max) @ Id, Vgs: 2.51mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK88 (SOT1235)
• Package / Case: SOT-1235

패키지: -

NHDTC143ZUX

Nexperia USA Inc.

TRANS PREBIAS NPN 80V SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 170 MHz
• Power - Max: 235 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: -

PSMN1R0-30YLD-2X

Nexperia USA Inc.

PSMN1R0-30YLD/SOT669/LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 300A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 238W (Ta)
• Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

패키지: -

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