NXP 제품 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
PBLS4004V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 300MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고7,136	100mA, 500mA	50V, 40V	22k	22k	60 @ 5mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA	1µA	300MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PBLS4002V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 300MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고3,792	100mA, 500mA	50V, 40V	4.7k	4.7k	30 @ 10mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA	1µA	300MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PBLS2002S,115	NXP	TRANS NPN PREBIAS/PNP 1.5W 8SO Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 3A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 100MHz Power - Max: 1.5W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,784	100mA, 3A	50V, 20V	4.7k	4.7k	30 @ 10mA, 5V / 150 @ 2A, 2V	150mV @ 500µA, 10mA / 355mV @ 300mA, 3A	1µA, 100nA	100MHz	1.5W	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PBLS2001S,115	NXP	TRANS NPN PREBIAS/PNP 1.5W 8SO Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 3A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 2A, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 100MHz Power - Max: 1.5W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,800	100mA, 3A	50V, 20V	2.2k	2.2k	30 @ 20mA, 5V / 150 @ 2A, 2V	150mV @ 500µA, 10mA / 355mV @ 300mA, 3A	1µA, 100nA	100MHz	1.5W	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PUML1,115	NXP	TRANS NPN PREBIAS/NPN 6TSSOP Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 200mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 210 @ 2mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고36,000	100mA, 200mA	50V	10k	10k	30 @ 5mA, 5V / 210 @ 2mA, 10V	150mV @ 500µA, 10mA / 250mV @ 10mA, 100mA	1µA	230MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PBLS1503V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 15V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 100mA. 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 280MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고2,224	100mA, 500mA	50V, 15V	10k	10k	30 @ 5mA, 5V / 150 @ 100mA. 2V	150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA	1µA, 100nA	280MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PBLS1504V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 15V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 280MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고4,224	100mA, 500mA	50V, 15V	22k	22k	60 @ 5mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA	1µA, 100nA	280MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PBLS2003S,115	NXP	TRANS NPN PREBIAS/PNP 1.5W 8SO Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 3A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 2A, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 100MHz Power - Max: 1.5W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,272	100mA, 3A	50V, 20V	10k	10k	30 @ 5mA, 5V / 150 @ 2A, 2V	150mV @ 500µA, 10mA / 355mV @ 300mA, 3A	1µA, 100nA	100MHz	1.5W	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PBLS4001V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 300MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고5,504	100mA, 500mA	50V, 40V	2.2k	2.2k	30 @ 20mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA	1µA	300MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PBLS4003V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 100mA. 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 300MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고5,008	100mA, 500mA	50V, 40V	10k	10k	30 @ 5mA, 5V / 150 @ 100mA. 2V	150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA	1µA	300MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PBLS1502V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 15V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 280MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고4,272	100mA, 500mA	50V, 15V	4.7k	4.7k	30 @ 10mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA	1µA, 100nA	280MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PBLS4005V,115	NXP	TRANS NPN PREBIAS/PNP SOT666 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 300MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고2,816	100mA, 500mA	50V, 40V	47k	47k	80 @ 5mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA	1µA	300MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PUMD3-ZL-165	NXP	PUMD3 - NPN/PNP RESISTOR-EQUIPPE Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PBLS1503V-115-NXP	NXP	0.1A 50V 2-ELEMENT NPN AND PNP Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 15V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 200 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 280MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: -	Request a Quote	100mA, 500mA	50V, 15V	10kOhms	10kOhms	30 @ 5mA, 5V / 200 @ 10mA, 2V	150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA	1µA, 100nA	280MHz	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PUMB2-ZLX	NXP	PUMB2/ZLX Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-