ON Semiconductor 제품 - 다이오드 - 브리지 정류기 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559 x831
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

ON Semiconductor 제품 - 다이오드 - 브리지 정류기

기록 28
페이지  1/1
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DBF250G-LK
ON Semiconductor

DIODE BRIDGE 1PH 25A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 700mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SSIP
  • Supplier Device Package: -
패키지: 4-SSIP
재고3,824
Standard
600V
3.5A
1.05V @ 700mA
10µA @ 600V
150°C (TJ)
Through Hole
4-SSIP
-
DBD10G-E
ON Semiconductor

DIODE BRIDGE 1PH 1A 600V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: -
패키지: 4-DIP (0.300", 7.62mm)
재고2,256
Standard
600V
1A
1.05V @ 500mA
10µA @ 600V
150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
-
DBB08G-TM-E
ON Semiconductor

DIODE BRIDGE 1PH 0.8A 600V 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 400mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-SMD
패키지: 4-SMD, Gull Wing
재고6,448
Standard
600V
800mA
1.05V @ 400mA
10µA @ 600V
150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMD
DBA500G
ON Semiconductor

DIODE BRIDGE 1PH 50A 600V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고6,368
Standard
600V
50A
1.05V @ 25A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA40G-K20
ON Semiconductor

DIODE BRIDGE 1PH 4A 600V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고2,128
Standard
600V
2.6A
1.05V @ 2A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA40G-K15
ON Semiconductor

DIODE BRIDGE 1PH 4A 600V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고4,544
Standard
600V
2.6A
1.05V @ 2A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA40G
ON Semiconductor

DIODE BRIDGE 1PH 4A 600V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고6,880
Standard
600V
2.6A
1.05V @ 2A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA250G
ON Semiconductor

DIODE BRIDGE 1PH 25A 600V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고7,376
Standard
600V
6A
1.05V @ 12.5A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA20G-K15
ON Semiconductor

DIODE BRIDGE 1PH 2A 600V SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고2,336
Standard
600V
2A
1.05V @ 1A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA20G
ON Semiconductor

DIODE BRIDGE 1PH 2A 600V SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고6,368
Standard
600V
2A
1.05V @ 1A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA150G
ON Semiconductor

DIODE BRIDGE 1PH 15A 600V SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고5,664
Standard
600V
4.5A
1.05V @ 7.5A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA100G-K15
ON Semiconductor

DIODE BRIDGE 1PH 10A 600V SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.7A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고3,216
Standard
600V
3.7A
1.05V @ 5A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBA100G
ON Semiconductor

DIODE BRIDGE 1PH 10A 600V SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.7A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: -
패키지: 4-Square, GBPC-W
재고7,760
Standard
600V
3.7A
1.05V @ 5A
10µA @ 600V
150°C (TJ)
Through Hole
4-Square, GBPC-W
-
DBD10G-TM-E
ON Semiconductor

DIODE BRIDGE 1PH 1A 600V 4SMD

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: -
패키지: 4-SMD, Gull Wing
재고4,224
Standard
600V
1A
1.05V @ 500mA
10µA @ 600V
150°C (TJ)
Surface Mount
4-SMD, Gull Wing
-
DBB04G
ON Semiconductor

DIODE BRIDGE 1PH 0.4A 600V 4DIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 200mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP
  • Supplier Device Package: -
패키지: 4-DIP
재고2,400
Standard
600V
400mA
1.05V @ 200mA
10µA @ 600V
150°C (TJ)
Through Hole
4-DIP
-
DBG250G
ON Semiconductor

DIODE BRIDGE 1PH 25A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBG
  • Supplier Device Package: -
패키지: 4-SIP, DBG
재고2,496
Standard
600V
3.6A
920mV @ 12.5A
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBG
-
DBG150G
ON Semiconductor

DIODE BRIDGE 1PH 15A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBG
  • Supplier Device Package: -
패키지: 4-SIP, DBG
재고6,608
Standard
600V
3.6A
900mV @ 7.5A
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBG
-
DBF60G
ON Semiconductor

DIODE BRIDGE 1PH 6A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
패키지: 4-SIP, DBF
재고3,104
Standard
600V
2.8A
1.05V @ 2.5A
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
DBF40G
ON Semiconductor

DIODE BRIDGE 1PH 4A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.3A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
패키지: 4-SIP, DBF
재고3,984
Standard
600V
2.3A
1.05V @ 2A
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
DBF250G
ON Semiconductor

DIODE BRIDGE 1PH 25A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 700mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
패키지: 4-SIP, DBF
재고3,536
Standard
600V
3.5A
1.05V @ 700mA
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
DBF20G
ON Semiconductor

DIODE BRIDGE 1PH 2A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 700mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
패키지: 4-SIP, DBF
재고6,240
Standard
600V
1.5A
1.05V @ 700mA
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
DBF150G
ON Semiconductor

DIODE BRIDGE 1PH 15A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
패키지: 4-SIP, DBF
재고2,544
Standard
600V
3.2A
1.1V @ 7.5A
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
DBF10TG
ON Semiconductor

DIODE BRIDGE 1PH 1A 600V TH

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
패키지: 4-SIP, DBF
재고4,320
Standard
600V
1A
1.05V @ 500mA
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
DBF10G
ON Semiconductor

DIODE BRIDGE 1PH 1A 600V 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, DBF
  • Supplier Device Package: -
패키지: 4-SIP, DBF
재고5,200
Standard
600V
1A
1.05V @ 500mA
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP, DBF
-
DBD250G
ON Semiconductor

DIODE BRIDGE 1PH 25A 600V SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: -
패키지: 4-SIP
재고4,592
Standard
600V
6A
1.05V @ 12.5A
10µA @ 600V
150°C (TJ)
Through Hole
4-SIP
-
NSR2030QMUTAG
ON Semiconductor

RECTIFIER BRIDGE 30V 2A 4UDFN

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
  • Current - Reverse Leakage @ Vr: 20µA @ 30V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-UDFN (3.5x3.5)
패키지: 4-UDFN Exposed Pad
재고6,496
Schottky
30V
2A
650mV @ 2A
20µA @ 30V
125°C (TJ)
Surface Mount
4-UDFN Exposed Pad
4-UDFN (3.5x3.5)
hot NMLU1210TWG
ON Semiconductor

IC FULL BRIDGE RECT 8-UDFN

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 20V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
  • Current - Reverse Leakage @ Vr: 40µA @ 20V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (4x4)
패키지: 8-UDFN Exposed Pad
재고679,020
Schottky
20V
3.2A
450mV @ 2A
40µA @ 20V
-55°C ~ 125°C (TJ)
Surface Mount
8-UDFN Exposed Pad
8-UDFN (4x4)
NSR1030QMUTAG
ON Semiconductor

RECT BRIDGE SCHTKY 30V 1A UDFN4

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Current - Reverse Leakage @ Vr: 20µA @ 30V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-UDFN (3x3)
패키지: 4-UDFN Exposed Pad
재고25,248
Schottky
30V
1A
600mV @ 1A
20µA @ 30V
125°C (TJ)
Surface Mount
4-UDFN Exposed Pad
4-UDFN (3x3)