페이지 6 - ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 2,260
페이지  6/81
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot NTS2101PT1G
ON Semiconductor

MOSFET P-CH 8V 1.4A SOT-323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 8V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 290mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고1,963,092
MOSFET (Metal Oxide)
8V
1.4A (Ta)
1.8V, 4.5V
700mV @ 250µA
6.4nC @ 5V
640pF @ 8V
±8V
-
290mW (Ta)
100 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
hot NTR4101PT1H
ON Semiconductor

MOSFET P-CH 20V 3.2A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 420mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고15,600
MOSFET (Metal Oxide)
20V
1.8A (Ta)
1.8V, 4.5V
1.2V @ 250µA
8.5nC @ 4.5V
675pF @ 10V
±8V
-
420mW (Ta)
85 mOhm @ 1.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot NVTR4503NT1G
ON Semiconductor

MOSFET N-CH 30V 1.5A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 420mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고577,044
MOSFET (Metal Oxide)
30V
1.5A (Ta)
4.5V, 10V
3V @ 250µA
7nC @ 10V
135pF @ 15V
±20V
-
420mW (Ta)
110 mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
NTNUS3171PZT5G
ON Semiconductor

MOSFET P-CH 20V 0.15A SOT-1123

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 125mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-1123
  • Package / Case: SOT-1123
패키지: SOT-1123
재고6,416
MOSFET (Metal Oxide)
20V
150mA (Ta)
1.2V, 4.5V
1V @ 250µA
-
13pF @ 15V
±8V
-
125mW (Ta)
3.5 Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-1123
SOT-1123
CPH3350-TL-W
ON Semiconductor

MOSFET P-CH 20V 3A CPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고7,760
MOSFET (Metal Oxide)
20V
3A (Ta)
1.8V, 4.5V
-
4.6nC @ 4.5V
375pF @ 10V
±10V
-
1W (Ta)
83 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
hot 3LN01SS-TL-E
ON Semiconductor

MOSFET N-CH 30V 0.15A SSFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-81 (SSFP)
  • Package / Case: SC-81
패키지: SC-81
재고1,839,588
MOSFET (Metal Oxide)
30V
150mA (Ta)
1.5V, 4V
-
1.58nC @ 10V
7pF @ 10V
±10V
-
150mW (Ta)
3.7 Ohm @ 80mA, 4V
150°C (TJ)
Surface Mount
SC-81 (SSFP)
SC-81
hot 3LP01SS-TL-E
ON Semiconductor

MOSFET P-CH 30V 0.1A SMCP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-SSFP
  • Package / Case: SC-81
패키지: SC-81
재고1,849,620
MOSFET (Metal Oxide)
30V
100mA (Ta)
1.5V, 4V
-
1.43nC @ 10V
7.5pF @ 10V
±10V
-
150mW (Ta)
10.4 Ohm @ 50mA, 4V
150°C (TJ)
Surface Mount
3-SSFP
SC-81
hot NTGS3443T1G
ON Semiconductor

MOSFET P-CH 20V 2.2A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 5V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
패키지: SOT-23-6
재고2,618,316
MOSFET (Metal Oxide)
20V
2.2A (Ta)
2.5V, 4.5V
1.5V @ 250µA
15nC @ 4.5V
565pF @ 5V
±12V
-
500mW (Ta)
65 mOhm @ 4.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
hot 3LN01M-TL-E
ON Semiconductor

MOSFET N-CH 30V 0.15A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70 / MCPH3
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고1,803,576
MOSFET (Metal Oxide)
30V
150mA (Ta)
1.5V, 4V
1.3V @ 100µA
1.58nC @ 10V
7pF @ 10V
±10V
-
150mW (Ta)
3.7 Ohm @ 80mA, 4V
150°C (TJ)
Surface Mount
SC-70 / MCPH3
SC-70, SOT-323
NVR1P02T1G
ON Semiconductor

MOSFET P-CH 20V 1A SOT-23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고7,440
MOSFET (Metal Oxide)
20V
1A (Ta)
4.5V, 10V
2.3V @ 250µA
2.5nC @ 5V
165pF @ 5V
±20V
-
400mW (Ta)
180 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot CPH3355-TL-H
ON Semiconductor

MOSFET P-CH 30V 2.5A CPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고25,188
MOSFET (Metal Oxide)
30V
2.5A (Ta)
4V, 10V
2.6V @ 1mA
3.9nC @ 10V
172pF @ 10V
±20V
-
1W (Ta)
156 mOhm @ 1A, 10V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
CPH6347-TL-W
ON Semiconductor

MOSFET P-CH 20V 6A CPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고3,312
MOSFET (Metal Oxide)
20V
6A (Ta)
1.8V, 4.5V
1.4V @ 1mA
10.5nC @ 4.5V
860pF @ 10V
±12V
-
1.6W (Ta)
39 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
6-CPH
SOT-23-6 Thin, TSOT-23-6
hot NTA7002NT1G
ON Semiconductor

MOSFET N-CH 30V 0.154A SOT-416

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Tj)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 154mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75, SOT-416
  • Package / Case: SC-75, SOT-416
패키지: SC-75, SOT-416
재고7,416,360
MOSFET (Metal Oxide)
30V
154mA (Tj)
2.5V, 4.5V
1.5V @ 100µA
-
20pF @ 5V
±10V
-
300mW (Tj)
7 Ohm @ 154mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
hot NTR1P02T1G
ON Semiconductor

MOSFET P-CH 20V 1A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고1,244,292
MOSFET (Metal Oxide)
20V
1A (Ta)
4.5V, 10V
2.3V @ 250µA
2.5nC @ 5V
165pF @ 5V
±20V
-
400mW (Ta)
180 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
MCH3475-TL-E
ON Semiconductor

MOSFET N-CH 30V 1.8A MCPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 900mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고2,592
MOSFET (Metal Oxide)
30V
1.8A (Ta)
4V, 10V
-
2nC @ 10V
88pF @ 10V
±20V
-
800mW (Ta)
180 mOhm @ 900mA, 10V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
NTR1P02LT3G
ON Semiconductor

MOSFET P-CH 20V 1.3A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 5V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고7,872
MOSFET (Metal Oxide)
20V
1.3A (Ta)
2.5V, 4.5V
1.25V @ 250µA
5.5nC @ 4V
225pF @ 5V
±12V
-
400mW (Ta)
220 mOhm @ 750mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
hot NTR4170NT1G
ON Semiconductor

MOSFET N-CH 30V 3.2A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 480mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고57,048
MOSFET (Metal Oxide)
30V
-
2.5V, 10V
1.4V @ 250µA
4.76nC @ 4.5V
432pF @ 15V
±12V
-
480mW (Ta)
55 mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
NVR4003NT3G
ON Semiconductor

MOSFET N-CH 30V SOT-23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 690mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고3,520
MOSFET (Metal Oxide)
30V
500mA (Ta)
2.5V, 4V
1.4V @ 250µA
1.15nC @ 5V
21pF @ 5V
±20V
-
690mW (Ta)
1.5 Ohm @ 10mA, 4V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23 (TO-236AB)
TO-236-3, SC-59, SOT-23-3
hot NTA4001NT1G
ON Semiconductor

MOSFET N-CH 20V 0.238A SOT-416

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Tj)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75, SOT-416
  • Package / Case: SC-75, SOT-416
패키지: SC-75, SOT-416
재고8,750,268
MOSFET (Metal Oxide)
20V
238mA (Tj)
2.5V, 4.5V
1.5V @ 100µA
-
20pF @ 5V
±10V
-
300mW (Tj)
3 Ohm @ 10mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
hot MCH3383-TL-H
ON Semiconductor

MOSFET P-CH 12V 3.5A MCH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 6V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 69 mOhm @ 1.5A, 2.5V
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고38,400
MOSFET (Metal Oxide)
12V
3.5A (Ta)
0.9V, 2.5V
800mV @ 1mA
6.2nC @ 2.5V
1010pF @ 6V
±5V
-
1W (Ta)
69 mOhm @ 1.5A, 2.5V
-55°C ~ 150°C (TA)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
hot NTMFS4943NT1G
ON Semiconductor

MOSFET N-CH 30V 8.3A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1401pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 910mW (Ta), 22.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: 8-PowerTDFN, 5 Leads
재고63,312
MOSFET (Metal Oxide)
30V
8.3A (Ta), 41A (Tc)
4.5V, 10V
2.2V @ 250µA
20.9nC @ 10V
1401pF @ 15V
±20V
-
910mW (Ta), 22.3W (Tc)
7.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
CPH3455-TL-W
ON Semiconductor

MOSFET N-CH 35V 3A CPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고44,052
MOSFET (Metal Oxide)
35V
3A (Ta)
4V, 10V
2.6V @ 1mA
4nC @ 10V
186pF @ 20V
±20V
-
1W (Ta)
104 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
hot MCH3476-TL-H
ON Semiconductor

MOSFET N-CH 20V 2A MCPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고18,888
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4.5V
-
1.8nC @ 4.5V
128pF @ 10V
±12V
-
800mW (Ta)
125 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
MCH3374-TL-W
ON Semiconductor

MOSFET P-CH 12V 3A MCPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고23,394
MOSFET (Metal Oxide)
12V
3A (Ta)
1.8V, 4V
1.4V @ 1mA
5.6nC @ 4.5V
405pF @ 6V
±8V
-
1W (Ta)
70 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
CPH3360-TL-W
ON Semiconductor

MOSFET P-CH 30V 1.6A CPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 82pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 303 mOhm @ 800mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고27,558
MOSFET (Metal Oxide)
30V
1.6A (Ta)
4V, 10V
2.6V @ 1mA
2.2nC @ 10V
82pF @ 10V
±20V
-
900mW (Ta)
303 mOhm @ 800mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
BMS3004-1E
ON Semiconductor

MOSFET P-CH 75V 68A TO-220F-3SG

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3SG
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고7,944
MOSFET (Metal Oxide)
75V
68A (Ta)
4V, 10V
-
300nC @ 10V
13400pF @ 20V
±20V
-
2W (Ta), 40W (Tc)
8.5 mOhm @ 34A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3SG
TO-220-3 Full Pack
NVMFS5C404NLAFT1G
ON Semiconductor

MOSFET N-CH 40V 370A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.67 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
패키지: 8-PowerTDFN, 5 Leads
재고14,742
MOSFET (Metal Oxide)
40V
370A (Tc)
4.5V, 10V
2V @ 250µA
81nC @ 4.5V
12168pF @ 25V
±20V
-
200W (Tc)
0.67 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C423NLT1G
ON Semiconductor

MOSFET N-CH 40V 126A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고14,310
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2V @ 250µA
50nC @ 10V
3100pF @ 20V
±20V
-
3.7W (Ta), 83W (Tc)
2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN