페이지 60 - ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 2,260
페이지  60/81
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot NTGS3441PT1G
ON Semiconductor

MOSFET P-CH 20V 1.8A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
패키지: SOT-23-6
재고1,640,388
MOSFET (Metal Oxide)
20V
1.8A (Ta)
2.5V, 4.5V
1.6V @ 250µA
6nC @ 4.5V
345pF @ 15V
±12V
-
510mW (Ta)
110 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
hot NTGS3441BT1G
ON Semiconductor

MOSFET P-CH 20V 2.2A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
패키지: SOT-23-6
재고300,300
MOSFET (Metal Oxide)
20V
2.2A (Ta)
2.5V, 4.5V
900mV @ 250µA
9nC @ 4.5V
630pF @ 10V
±8V
-
700mW (Ta)
90 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
NTD6600N-1G
ON Semiconductor

MOSFET N-CH 100V 12A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고3,824
MOSFET (Metal Oxide)
100V
12A (Ta)
5V
2V @ 250µA
20nC @ 5V
700pF @ 25V
±20V
-
1.28W (Ta), 56.6W (Tc)
146 mOhm @ 6A, 5V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD5407NT4G
ON Semiconductor

MOSFET N-CH 40V 38A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 32V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고922,764
MOSFET (Metal Oxide)
40V
7.6A (Ta), 38A (Tc)
5V, 10V
3.5V @ 250µA
20nC @ 10V
1000pF @ 32V
±20V
-
2.9W (Ta), 75W (Tc)
26 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD5407NG
ON Semiconductor

MOSFET N-CH 40V 38A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 32V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,840
MOSFET (Metal Oxide)
40V
7.6A (Ta), 38A (Tc)
5V, 10V
3.5V @ 250µA
20nC @ 10V
1000pF @ 32V
±20V
-
75W (Tc)
26 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4863N-35G
ON Semiconductor

MOSFET N-CH 25V 9.2A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고5,408
MOSFET (Metal Oxide)
25V
9.2A (Ta), 49A (Tc)
4.5V, 10V
2.5V @ 250µA
13.5nC @ 4.5V
990pF @ 12V
±20V
-
1.27W (Ta), 36.6W (Tc)
9.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4863N-1G
ON Semiconductor

MOSFET N-CH 25V 9.2A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고5,424
MOSFET (Metal Oxide)
25V
9.2A (Ta), 49A (Tc)
4.5V, 10V
2.5V @ 250µA
13.5nC @ 4.5V
990pF @ 12V
±20V
-
1.27W (Ta), 36.6W (Tc)
9.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD4860N-35G
ON Semiconductor

MOSFET N-CH 25V 10.4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고3,216
MOSFET (Metal Oxide)
25V
10.4A (Ta), 65A (Tc)
4.5V, 10V
2.5V @ 250µA
16.5nC @ 4.5V
1308pF @ 12V
±20V
-
1.28W (Ta), 50W (Tc)
7.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4860N-1G
ON Semiconductor

MOSFET N-CH 25V 10.4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고5,888
MOSFET (Metal Oxide)
25V
10.4A (Ta), 65A (Tc)
4.5V, 10V
2.5V @ 250µA
16.5nC @ 4.5V
1308pF @ 12V
±20V
-
1.28W (Ta), 50W (Tc)
7.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD4858N-1G
ON Semiconductor

MOSFET N-CH 25V 11.2A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1563pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고5,792
MOSFET (Metal Oxide)
25V
11.2A (Ta), 73A (Tc)
4.5V, 10V
2.5V @ 250µA
19.2nC @ 4.5V
1563pF @ 12V
±20V
-
1.3W (Ta), 54.5W (Tc)
6.2 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD4857NT4G
ON Semiconductor

MOSFET N-CH 25V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고147,564
MOSFET (Metal Oxide)
25V
12A (Ta), 78A (Tc)
4.5V, 10V
2.5V @ 250µA
24nC @ 4.5V
1960pF @ 12V
±20V
-
1.31W (Ta), 56.6W (Tc)
5.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4857N-35G
ON Semiconductor

MOSFET N-CH 25V 12A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고2,320
MOSFET (Metal Oxide)
25V
12A (Ta), 78A (Tc)
4.5V, 10V
2.5V @ 250µA
24nC @ 4.5V
1960pF @ 12V
±20V
-
1.31W (Ta), 56.6W (Tc)
5.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD4857N-1G
ON Semiconductor

MOSFET N-CH 25V 12A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고5,680
MOSFET (Metal Oxide)
25V
12A (Ta), 78A (Tc)
4.5V, 10V
2.5V @ 250µA
24nC @ 4.5V
1960pF @ 12V
±20V
-
1.31W (Ta), 56.6W (Tc)
5.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD4856NT4G
ON Semiconductor

MOSFET N-CH 25V 13.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2241pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고1,043,940
MOSFET (Metal Oxide)
25V
13.3A (Ta), 89A (Tc)
4.5V, 10V
2.5V @ 250µA
27nC @ 4.5V
2241pF @ 12V
±20V
-
1.33W (Ta), 60W (Tc)
4.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4856N-35G
ON Semiconductor

MOSFET N-CH 25V 13.3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2241pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고4,240
MOSFET (Metal Oxide)
25V
13.3A (Ta), 89A (Tc)
4.5V, 10V
2.5V @ 250µA
27nC @ 4.5V
2241pF @ 12V
±20V
-
1.33W (Ta), 60W (Tc)
4.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4856N-1G
ON Semiconductor

MOSFET N-CH 25V 13.3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2241pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고3,840
MOSFET (Metal Oxide)
25V
13.3A (Ta), 89A (Tc)
4.5V, 10V
2.5V @ 250µA
27nC @ 4.5V
2241pF @ 12V
±20V
-
1.33W (Ta), 60W (Tc)
4.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD4855NT4G
ON Semiconductor

MOSFET N-CH 25V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고335,268
MOSFET (Metal Oxide)
25V
14A (Ta), 98A (Tc)
4.5V, 10V
2.5V @ 250µA
32.7nC @ 4.5V
2950pF @ 12V
±20V
-
1.35W (Ta), 66.7W (Tc)
4.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4855N-35G
ON Semiconductor

MOSFET N-CH 25V 14A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고6,000
MOSFET (Metal Oxide)
25V
14A (Ta), 98A (Tc)
4.5V, 10V
2.5V @ 250µA
32.7nC @ 4.5V
2950pF @ 12V
±20V
-
1.35W (Ta), 66.7W (Tc)
4.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4855N-1G
ON Semiconductor

MOSFET N-CH 25V 14A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.35W (Ta), 66.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고3,312
MOSFET (Metal Oxide)
25V
14A (Ta), 98A (Tc)
4.5V, 10V
2.5V @ 250µA
32.7nC @ 4.5V
2950pF @ 12V
±20V
-
1.35W (Ta), 66.7W (Tc)
4.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD4854NT4G
ON Semiconductor

MOSFET N-CH 25V 15.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고215,736
MOSFET (Metal Oxide)
25V
15.7A (Ta), 128A (Tc)
4.5V, 10V
2.5V @ 250µA
49.2nC @ 4.5V
4600pF @ 12V
±20V
-
1.43W (Ta), 93.75W (Tc)
3.6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4854N-35G
ON Semiconductor

MOSFET N-CH 25V 15.7A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고4,384
MOSFET (Metal Oxide)
25V
15.7A (Ta), 128A (Tc)
4.5V, 10V
2.5V @ 250µA
49.2nC @ 4.5V
4600pF @ 12V
±20V
-
1.43W (Ta), 93.75W (Tc)
3.6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4854N-1G
ON Semiconductor

MOSFET N-CH 25V 15.7A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고7,280
MOSFET (Metal Oxide)
25V
15.7A (Ta), 128A (Tc)
4.5V, 10V
2.5V @ 250µA
49.2nC @ 4.5V
4600pF @ 12V
±20V
-
1.43W (Ta), 93.75W (Tc)
3.6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD4815NH-35G
ON Semiconductor

MOSFET N-CH 30V 6.9A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고2,256
MOSFET (Metal Oxide)
30V
6.9A (Ta), 35A (Tc)
4.5V, 11.5V
2.5V @ 250µA
6.8nC @ 4.5V
845pF @ 12V
±20V
-
1.26W (Ta), 32.6W (Tc)
15 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4815NH-1G
ON Semiconductor

MOSFET N-CH 30V 6.9A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고5,472
MOSFET (Metal Oxide)
30V
6.9A (Ta), 35A (Tc)
4.5V, 11.5V
2.5V @ 250µA
6.8nC @ 4.5V
845pF @ 12V
±20V
-
1.26W (Ta), 32.6W (Tc)
15 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTD4813NH-35G
ON Semiconductor

MOSFET N-CH 30V 7.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고4,224
MOSFET (Metal Oxide)
30V
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
2.5V @ 250µA
10nC @ 4.5V
940pF @ 12V
±20V
-
1.27W (Ta), 35.3W (Tc)
13 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
NTD4813NH-1G
ON Semiconductor

MOSFET N-CH 30V 7.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고7,488
MOSFET (Metal Oxide)
30V
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
2.5V @ 250µA
10nC @ 4.5V
940pF @ 12V
±20V
-
1.27W (Ta), 35.3W (Tc)
13 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NTD4813N-35G
ON Semiconductor

MOSFET N-CH 30V 7.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고6,112
MOSFET (Metal Oxide)
30V
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
2.5V @ 250µA
7.9nC @ 4.5V
860pF @ 12V
±20V
-
1.27W (Ta), 35.3W (Tc)
13 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Stub Leads, IPak
hot NTD4813N-1G
ON Semiconductor

MOSFET N-CH 30V 7.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고6,208
MOSFET (Metal Oxide)
30V
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
2.5V @ 250µA
7.9nC @ 4.5V
860pF @ 12V
±20V
-
1.27W (Ta), 35.3W (Tc)
13 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA