페이지 79 - ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 2,260
페이지  79/81
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부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NDT02N60ZT1G
ON Semiconductor

MOSFET N-CH 600V 300MA SOT223-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223 (TO-261)
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고6,208
MOSFET (Metal Oxide)
600V
300mA (Tc)
10V
4.5V @ 50µA
7.4nC @ 10V
170pF @ 25V
±30V
-
2W (Tc)
8 Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
CPH3461-TL-H
ON Semiconductor

MOSFET N-CH 250V 0.35A CPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 170mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,528
MOSFET (Metal Oxide)
250V
350mA (Ta)
2.5V, 4.5V
1.3V @ 250µA
2.1nC @ 4.5V
140pF @ 20V
±10V
-
1W (Ta)
6.5 Ohm @ 170mA, 4.5V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
5HP01S-TL-E
ON Semiconductor

MOSFET P-CH 50V 70MA SMCP3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: SC-75, SOT-416
패키지: SC-75, SOT-416
재고7,920
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SMCP
SC-75, SOT-416
hot 5HP01M-TL-E
ON Semiconductor

MOSFET P-CH 50V 0.07A MCP3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 22 Ohm @ 40mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고823,176
MOSFET (Metal Oxide)
50V
70mA (Ta)
4V, 10V
-
1.32nC @ 10V
6.2pF @ 10V
±20V
-
150mW (Ta)
22 Ohm @ 40mA, 10V
150°C (TJ)
Surface Mount
3-MCP
SC-70, SOT-323
hot 5HP01C-TB-E
ON Semiconductor

MOSFET P-CH 50V 70MA CP3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CP
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고1,860,000
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
3-CP
3-SMD, Flat Leads
5HN01S-TL-E
ON Semiconductor

MOSFET N-CH 50V 100MA SMCP3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: SC-75, SOT-416
패키지: SC-75, SOT-416
재고7,984
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SMCP
SC-75, SOT-416
hot 5HN01M-TL-E
ON Semiconductor

MOSFET N-CH 50V 0.1A MCP3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고96,528
MOSFET (Metal Oxide)
50V
100mA (Ta)
4V, 10V
-
1.4nC @ 10V
6.2pF @ 10V
±20V
-
150mW (Ta)
7.5 Ohm @ 50mA, 10V
150°C (TJ)
Surface Mount
3-MCP
SC-70, SOT-323
SFT1458-TL-H
ON Semiconductor

MOSFET N-CH 600V 1A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK/TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,488
MOSFET (Metal Oxide)
600V
1A (Ta)
10V
-
3.8nC @ 10V
65pF @ 20V
±30V
-
1W (Ta), 38W (Tc)
13 Ohm @ 500mA, 10V
150°C (TJ)
Surface Mount
DPAK/TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4962NFT3G
ON Semiconductor

MOSFET N-CH 30V SO8FL

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고3,680
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NDT02N60ZT3G
ON Semiconductor

MOSFET N-CH 600V 300MA SOT223-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223 (TO-261)
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고3,504
MOSFET (Metal Oxide)
600V
300mA (Tc)
10V
4.5V @ 50µA
7.4nC @ 10V
170pF @ 25V
±30V
-
2W (Tc)
8 Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
SFT1458-H
ON Semiconductor

MOSFET N-CH 600V 1A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK/TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고3,264
MOSFET (Metal Oxide)
600V
1A (Ta)
10V
-
3.8nC @ 10V
65pF @ 20V
±30V
-
1W (Ta), 38W (Tc)
13 Ohm @ 500mA, 10V
150°C (TJ)
Through Hole
IPAK/TP
TO-251-3 Short Leads, IPak, TO-251AA
hot SFT1443-TL-H
ON Semiconductor

MOSFET N-CH 100V 9A TP-FA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 225 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK/TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고70,044
MOSFET (Metal Oxide)
100V
9A (Ta)
4V, 10V
2.6V @ 1mA
9.8nC @ 10V
490pF @ 20V
±20V
-
1W (Ta), 19W (Tc)
225 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
DPAK/TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot MCH3484-TL-H
ON Semiconductor

MOSFET N-CH 20V 4.5A MCPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 2.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70FL/MCPH3
  • Package / Case: 3-SMD, Flat Leads
패키지: 3-SMD, Flat Leads
재고78,000
MOSFET (Metal Oxide)
20V
4.5A (Ta)
0.9V, 2.5V
800mV @ 1mA
11nC @ 2.5V
630pF @ 10V
±5V
-
1W (Ta)
40 mOhm @ 2A, 2.5V
150°C (TJ)
Surface Mount
SC-70FL/MCPH3
3-SMD, Flat Leads
hot CPH6354-TL-H
ON Semiconductor

MOSFET P-CH 60V 4A CPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고4,480
MOSFET (Metal Oxide)
60V
4A (Ta)
4V, 10V
-
14nC @ 10V
600pF @ 20V
±20V
-
1.6W (Ta)
100 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
6-CPH
SOT-23-6 Thin, TSOT-23-6
CPH3456-TL-H
ON Semiconductor

MOSFET N-CH 20V 3.5A CPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 71 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,672
MOSFET (Metal Oxide)
20V
3.5A (Ta)
1.8V, 4.5V
-
2.8nC @ 4.5V
260pF @ 10V
±12V
-
1W (Ta)
71 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
5LN01SP-AC
ON Semiconductor

MOSFET N-CH 50V 100MA SPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 3-SPA
  • Package / Case: SC-72
패키지: SC-72
재고3,344
MOSFET (Metal Oxide)
50V
100mA (Ta)
1.5V, 4V
1.3V @ 100µA
1.57nC @ 10V
6.6pF @ 10V
±10V
-
250mW (Ta)
7.8 Ohm @ 50mA, 4V
150°C (TJ)
Through Hole
3-SPA
SC-72
hot 3LN01S-TL-E
ON Semiconductor

MOSFET N-CH 30V 150MA SMCP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMCP
  • Package / Case: SC-75, SOT-416
패키지: SC-75, SOT-416
재고5,772,252
MOSFET (Metal Oxide)
30V
150mA (Ta)
1.5V, 4V
-
1.58nC @ 10V
7pF @ 10V
±10V
-
150mW (Ta)
3.7 Ohm @ 80mA, 4V
150°C (TJ)
Surface Mount
SMCP
SC-75, SOT-416
CPH6442-TL-E
ON Semiconductor

MOSFET N-CH 60V 6A CPH6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고7,280
MOSFET (Metal Oxide)
60V
6A (Ta)
4V, 10V
2.6V @ 1mA
20nC @ 10V
1040pF @ 20V
±20V
-
1.6W (Ta)
43 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
6-CPH
SOT-23-6 Thin, TSOT-23-6
WPB4002-1E
ON Semiconductor

MOSFET N-CH 600V 23A TO3P3L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 11.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P-3L
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고4,880
MOSFET (Metal Oxide)
600V
23A (Ta)
10V
-
84nC @ 10V
2200pF @ 30V
±30V
-
2.5W (Ta), 220W (Tc)
360 mOhm @ 11.5A, 10V
150°C (TJ)
Through Hole
TO-3P-3L
TO-3P-3, SC-65-3
WPB4001-1E
ON Semiconductor

MOSFET N-CH 500V 26A TO3P3L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P-3L
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고5,584
MOSFET (Metal Oxide)
500V
26A (Ta)
10V
-
87nC @ 10V
2250pF @ 30V
±30V
-
2.5W (Ta), 220W (Tc)
260 mOhm @ 13A, 10V
150°C (TJ)
Through Hole
TO-3P-3L
TO-3P-3, SC-65-3
STD3155L104T4G
ON Semiconductor

MOSFET N-CH 60V DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고2,336
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot SFT1423-S-TL-E
ON Semiconductor

MOSFET N-CH 500V 2A TP-FA

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고279,780
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SCH1433-S-TL-H
ON Semiconductor

MOSFET N-CH 20V 3.5A SCH6

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
패키지: SOT-563, SOT-666
재고293,280
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
6-SCH
SOT-563, SOT-666
hot SCH1331-S-TL-H
ON Semiconductor

MOSFET P-CH 12V 3A SCH6

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
패키지: SOT-563, SOT-666
재고108,540
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
6-SCH
SOT-563, SOT-666
hot SCH1331-P-TL-H
ON Semiconductor

MOSFET P-CH 12V 3A SCH6

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SCH
  • Package / Case: SOT-563, SOT-666
패키지: SOT-563, SOT-666
재고48,996
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
6-SCH
SOT-563, SOT-666
NVD4813NHT4G
ON Semiconductor

MOSFET N-CH 30V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,872
MOSFET (Metal Oxide)
30V
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
2.5V @ 250µA
10nC @ 4.5V
940pF @ 12V
±20V
-
1.27W (Ta), 35.3W (Tc)
13 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NVD4809NT4G
ON Semiconductor

MOSFET N-CH 30V 58A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,792
MOSFET (Metal Oxide)
30V
9.6A (Ta), 58A (Tc)
4.5V, 11.5V
2.5V @ 250µA
25nC @ 11.5V
1456pF @ 12V
±20V
-
1.4W (Ta), 52W (Tc)
9 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NVD4809NHT4G
ON Semiconductor

MOSFET N-CH 30V 58A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,416
MOSFET (Metal Oxide)
30V
9A (Ta), 58A (Tc)
4.5V, 11.5V
2.5V @ 250µA
44nC @ 11.5V
2155pF @ 12V
±20V
-
1.3W (Ta), 52W (Tc)
9 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63