페이지 3 - ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일

NGTB40N120FL2WAG

ON Semiconductor

IGBT FIELD STOP 1200V TO247-4

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 536W
Switching Energy: 1.7mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 313nC
Td (on/off) @ 25°C: 30ns/145ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 240ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L

패키지: TO-247-4

재고2,128

1200V

160A

2.4V @ 15V, 40A

536W

1.7mJ (on), 1.1mJ (off)

Standard

313nC

30ns/145ns

600V, 40A, 10 Ohm, 15V

240ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-4

TO-247-4L

NGTB40N65FL2WG

ON Semiconductor

IGBT 650V 80A 366W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 366W
Switching Energy: 970µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 84ns/177ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 72ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고5,536

650V

80A

160A

2V @ 15V, 40A

366W

970µJ (on), 440µJ (off)

Standard

170nC

84ns/177ns

400V, 40A, 10 Ohm, 15V

72ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB30N135IHRWG

ON Semiconductor

IGBT 1350V 60A 394W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1350V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 30A
Power - Max: 394W
Switching Energy: 850µJ (off)
Input Type: Standard
Gate Charge: 234nC
Td (on/off) @ 25°C: -/250ns
Test Condition: 600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고6,960

1350V

60A

120A

2.65V @ 15V, 30A

394W

850µJ (off)

Standard

234nC

-/250ns

600V, 30A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTD30T120F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고3,504

1200V

-

200A

2.4V @ 15V, 40A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTB25N120FL2WG

ON Semiconductor

IGBT 1200V 25A TO247-3

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 385W
Switching Energy: 1.95mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 178nC
Td (on/off) @ 25°C: 87ns/179ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr): 154ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고6,224

1200V

50A

100A

2.4V @ 15V, 25A

385W

1.95mJ (on), 600µJ (off)

Standard

178nC

87ns/179ns

600V, 25A, 10 Ohm, 15V

154ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTB40N60FL2WG

ON Semiconductor

IGBT 600V 80A 366W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 366W
Switching Energy: 970µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 84ns/177ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 72ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고7,328

600V

80A

160A

2V @ 15V, 40A

366W

970µJ (on), 440µJ (off)

Standard

170nC

84ns/177ns

400V, 40A, 10 Ohm, 15V

72ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB45N60SWG

ON Semiconductor

IGBT 600V 45A TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
Power - Max: 250W
Switching Energy: 550µJ (off)
Input Type: Standard
Gate Charge: 134nC
Td (on/off) @ 25°C: 70ns/144ns
Test Condition: 400V, 45A, 10 Ohm, 15V
Reverse Recovery Time (trr): 376ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고2,304

600V

90A

180A

2.4V @ 15V, 45A

250W

550µJ (off)

Standard

134nC

70ns/144ns

400V, 45A, 10 Ohm, 15V

376ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

NGTD30T120F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고3,552

1200V

-

200A

2.4V @ 15V, 40A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTB20N120IHTG

ON Semiconductor

IGBT 1200V 20A TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,544

-

NGTB30N120IHRWG

ON Semiconductor

IGBT 1200V 60A 384W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 384W
Switching Energy: 700µJ (off)
Input Type: Standard
Gate Charge: 225nC
Td (on/off) @ 25°C: -/230ns
Test Condition: 600V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고2,320

1200V

60A

120A

2.5V @ 15V, 30A

384W

700µJ (off)

Standard

225nC

-/230ns

600V, 30A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB50N65FL2WAG

ON Semiconductor

IGBT FIELD STOP 650V TO247-4

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 417W
Switching Energy: 420µJ (on), 550µJ (off)
Input Type: Standard
Gate Charge: 215nC
Td (on/off) @ 25°C: 23ns/123ns
Test Condition: 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr): 94ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L

패키지: TO-247-4

재고2,736

650V

160A

2V @ 15V, 50A

417W

420µJ (on), 550µJ (off)

Standard

215nC

23ns/123ns

400V, 50A, 10 Ohm, 15V

94ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-4

TO-247-4L

NGTB25N120FL2WAG

ON Semiconductor

IGBT FIELD STOP 1.2KV TO247-4

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 385W
Switching Energy: 990µJ (on), 660µJ (off)
Input Type: Standard
Gate Charge: 181nC
Td (on/off) @ 25°C: 17ns/113ns
Test Condition: 600V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr): 136ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L

패키지: TO-247-4

재고3,728

1200V

100A

2.4V @ 15V, 25A

385W

990µJ (on), 660µJ (off)

Standard

181nC

17ns/113ns

600V, 50A, 10 Ohm, 15V

136ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-4

TO-247-4L

NGTG25N120FL2WG

ON Semiconductor

IGBT 1200V 25A TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Power - Max: 385W
Switching Energy: 1.95mJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 178nC
Td (on/off) @ 25°C: 87ns/179ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고7,744

1200V

50A

100A

2.4V @ 15V, 25A

385W

1.95mJ (on), 600µJ (off)

Standard

178nC

87ns/179ns

600V, 25A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTD28T65F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,352

650V

-

200A

2V @ 15V, 75A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTB30N60L2WG

ON Semiconductor

IGBT 600V 30A TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Power - Max: 225W
Switching Energy: 310µJ (on), 1.14mJ (off)
Input Type: Standard
Gate Charge: 166nC
Td (on/off) @ 25°C: 100ns/390ns
Test Condition: 300V, 30A, 30 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고6,112

600V

100A

60A

1.6V @ 15V, 30A

225W

310µJ (on), 1.14mJ (off)

Standard

166nC

100ns/390ns

300V, 30A, 30 Ohm, 15V

70ns

175°C (TJ)

Through Hole

TO-247-3

NGTD28T65F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,712

650V

-

200A

2V @ 15V, 75A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTB20N120IHWG

ON Semiconductor

IGBT 20A 1200V TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
Power - Max: 341W
Switching Energy: 480µJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: -/170ns
Test Condition: 600V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고6,816

1200V

40A

80A

2.65V @ 15V, 20A

341W

480µJ (off)

Standard

150nC

-/170ns

600V, 20A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTB30N65IHL2WG

ON Semiconductor

IGBT 600V 70A 300W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: 300W
Switching Energy: 200µJ (off)
Input Type: Standard
Gate Charge: 135nC
Td (on/off) @ 25°C: -/145ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 430ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고4,592

650V

60A

120A

2.2V @ 15V, 30A

300W

200µJ (off)

Standard

135nC

-/145ns

400V, 30A, 10 Ohm, 15V

430ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTB15N120FL2WG

ON Semiconductor

IGBT 1200V 15A SOLAR/UPS TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Power - Max: 294W
Switching Energy: 1.2mJ (on), 370µJ (off)
Input Type: Standard
Gate Charge: 109nC
Td (on/off) @ 25°C: 64ns/132ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): 110ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고145,980

1200V

30A

60A

2.4V @ 15V, 15A

294W

1.2mJ (on), 370µJ (off)

Standard

109nC

64ns/132ns

600V, 15A, 10 Ohm, 15V

110ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTB30N60IHLWG

ON Semiconductor

IGBT 600V 30A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Power - Max: 250W
Switching Energy: 280µJ (off)
Input Type: Standard
Gate Charge: 130nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 400ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고7,616

600V

60A

150A

2.3V @ 15V, 30A

250W

280µJ (off)

Standard

130nC

70ns/140ns

400V, 30A, 10 Ohm, 15V

400ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

NGTB45N60S2WG

ON Semiconductor

IGBT 45A 600V TO-247

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 45A
Power - Max: 300W
Switching Energy: 360µJ (off)
Input Type: Standard
Gate Charge: 135nC
Td (on/off) @ 25°C: -/151ns
Test Condition: 400V, 45A, 10 Ohm, 15V
Reverse Recovery Time (trr): 498ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고4,832

600V

90A

180A

2.3V @ 15V, 45A

300W

360µJ (off)

Standard

135nC

-/151ns

400V, 45A, 10 Ohm, 15V

498ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTG30N60FLWG

ON Semiconductor

IGBT 600V 60A 250W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: 250W
Switching Energy: 700µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 83ns/170ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고2,736

600V

60A

120A

1.9V @ 15V, 30A

250W

700µJ (on), 280µJ (off)

Standard

170nC

83ns/170ns

400V, 30A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

NGTG35N65FL2WG

ON Semiconductor

IGBT 650V 60A 167W TO247

IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Power - Max: 300W
Switching Energy: 840µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 125nC
Td (on/off) @ 25°C: 72ns/132ns
Test Condition: 400V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고3,424

650V

70A

120A

2V @ 15V, 35A

300W

840µJ (on), 280µJ (off)

Standard

125nC

72ns/132ns

400V, 35A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTD23T120F2SWK

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고6,704

1200V

-

120A

2.2V @ 15V, 25A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTB15N135IHRWG

ON Semiconductor

IGBT 1350V 15A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1350V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 15A
Power - Max: 357W
Switching Energy: 420µJ (off)
Input Type: Standard
Gate Charge: 156nC
Td (on/off) @ 25°C: -/170ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고6,016

1350V

30A

60A

2.65V @ 15V, 15A

357W

420µJ (off)

Standard

156nC

-/170ns

600V, 15A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

NGTD23T120F2WP

ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고4,640

1200V

-

120A

2.2V @ 15V, 25A

-

Standard

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

NGTG15N120FL2WG

ON Semiconductor

IGBT 1200V 15A TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Power - Max: 294W
Switching Energy: 1.2mJ (on), 370µJ (off)
Input Type: Standard
Gate Charge: 109nC
Td (on/off) @ 25°C: 64ns/128ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고7,856

1200V

30A

60A

2.4V @ 15V, 15A

294W

1.2mJ (on), 370µJ (off)

Standard

109nC

64ns/128ns

600V, 15A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

NGTB15N120IHRWG

ON Semiconductor

IGBT 1200V 15A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: 333W
Switching Energy: 340µJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: -/170ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고2,464

1200V

30A

60A

2.5V @ 15V, 15A

333W

340µJ (off)

Standard

160nC

-/170ns

600V, 15A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NGTB40N120FL2WAG	ON Semiconductor	IGBT FIELD STOP 1200V TO247-4 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 536W Switching Energy: 1.7mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 30ns/145ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	패키지: TO-247-4	재고2,128	1200V	160A	160A	2.4V @ 15V, 40A	536W	1.7mJ (on), 1.1mJ (off)	Standard	313nC	30ns/145ns	600V, 40A, 10 Ohm, 15V	240ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4L
NGTB40N65FL2WG	ON Semiconductor	IGBT 650V 80A 366W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 366W Switching Energy: 970µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 84ns/177ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 72ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고5,536	650V	80A	160A	2V @ 15V, 40A	366W	970µJ (on), 440µJ (off)	Standard	170nC	84ns/177ns	400V, 40A, 10 Ohm, 15V	72ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB30N135IHRWG	ON Semiconductor	IGBT 1350V 60A 394W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 30A Power - Max: 394W Switching Energy: 850µJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/250ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고6,960	1350V	60A	120A	2.65V @ 15V, 30A	394W	850µJ (off)	Standard	234nC	-/250ns	600V, 30A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTD30T120F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고3,504	1200V	-	200A	2.4V @ 15V, 40A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTB25N120FL2WG	ON Semiconductor	IGBT 1200V 25A TO247-3 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 1.95mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 178nC Td (on/off) @ 25°C: 87ns/179ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 154ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고6,224	1200V	50A	100A	2.4V @ 15V, 25A	385W	1.95mJ (on), 600µJ (off)	Standard	178nC	87ns/179ns	600V, 25A, 10 Ohm, 15V	154ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTB40N60FL2WG	ON Semiconductor	IGBT 600V 80A 366W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 366W Switching Energy: 970µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 84ns/177ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 72ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고7,328	600V	80A	160A	2V @ 15V, 40A	366W	970µJ (on), 440µJ (off)	Standard	170nC	84ns/177ns	400V, 40A, 10 Ohm, 15V	72ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB45N60SWG	ON Semiconductor	IGBT 600V 45A TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 250W Switching Energy: 550µJ (off) Input Type: Standard Gate Charge: 134nC Td (on/off) @ 25°C: 70ns/144ns Test Condition: 400V, 45A, 10 Ohm, 15V Reverse Recovery Time (trr): 376ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고2,304	600V	90A	180A	2.4V @ 15V, 45A	250W	550µJ (off)	Standard	134nC	70ns/144ns	400V, 45A, 10 Ohm, 15V	376ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTD30T120F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고3,552	1200V	-	200A	2.4V @ 15V, 40A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTB20N120IHTG	ON Semiconductor	IGBT 1200V 20A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGTB30N120IHRWG	ON Semiconductor	IGBT 1200V 60A 384W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 384W Switching Energy: 700µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: -/230ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고2,320	1200V	60A	120A	2.5V @ 15V, 30A	384W	700µJ (off)	Standard	225nC	-/230ns	600V, 30A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB50N65FL2WAG	ON Semiconductor	IGBT FIELD STOP 650V TO247-4 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 417W Switching Energy: 420µJ (on), 550µJ (off) Input Type: Standard Gate Charge: 215nC Td (on/off) @ 25°C: 23ns/123ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 94ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	패키지: TO-247-4	재고2,736	650V	160A	160A	2V @ 15V, 50A	417W	420µJ (on), 550µJ (off)	Standard	215nC	23ns/123ns	400V, 50A, 10 Ohm, 15V	94ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4L
NGTB25N120FL2WAG	ON Semiconductor	IGBT FIELD STOP 1.2KV TO247-4 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 990µJ (on), 660µJ (off) Input Type: Standard Gate Charge: 181nC Td (on/off) @ 25°C: 17ns/113ns Test Condition: 600V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 136ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	패키지: TO-247-4	재고3,728	1200V	100A	100A	2.4V @ 15V, 25A	385W	990µJ (on), 660µJ (off)	Standard	181nC	17ns/113ns	600V, 50A, 10 Ohm, 15V	136ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4L
NGTG25N120FL2WG	ON Semiconductor	IGBT 1200V 25A TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 1.95mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 178nC Td (on/off) @ 25°C: 87ns/179ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고7,744	1200V	50A	100A	2.4V @ 15V, 25A	385W	1.95mJ (on), 600µJ (off)	Standard	178nC	87ns/179ns	600V, 25A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTD28T65F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,352	650V	-	200A	2V @ 15V, 75A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTB30N60L2WG	ON Semiconductor	IGBT 600V 30A TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A Power - Max: 225W Switching Energy: 310µJ (on), 1.14mJ (off) Input Type: Standard Gate Charge: 166nC Td (on/off) @ 25°C: 100ns/390ns Test Condition: 300V, 30A, 30 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고6,112	600V	100A	60A	1.6V @ 15V, 30A	225W	310µJ (on), 1.14mJ (off)	Standard	166nC	100ns/390ns	300V, 30A, 30 Ohm, 15V	70ns	175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTD28T65F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 650V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,712	650V	-	200A	2V @ 15V, 75A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTB20N120IHWG	ON Semiconductor	IGBT 20A 1200V TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A Power - Max: 341W Switching Energy: 480µJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: -/170ns Test Condition: 600V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고6,816	1200V	40A	80A	2.65V @ 15V, 20A	341W	480µJ (off)	Standard	150nC	-/170ns	600V, 20A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTB30N65IHL2WG	ON Semiconductor	IGBT 600V 70A 300W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 300W Switching Energy: 200µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: -/145ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 430ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고4,592	650V	60A	120A	2.2V @ 15V, 30A	300W	200µJ (off)	Standard	135nC	-/145ns	400V, 30A, 10 Ohm, 15V	430ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTB15N120FL2WG	ON Semiconductor	IGBT 1200V 15A SOLAR/UPS TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 294W Switching Energy: 1.2mJ (on), 370µJ (off) Input Type: Standard Gate Charge: 109nC Td (on/off) @ 25°C: 64ns/132ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): 110ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고145,980	1200V	30A	60A	2.4V @ 15V, 15A	294W	1.2mJ (on), 370µJ (off)	Standard	109nC	64ns/132ns	600V, 15A, 10 Ohm, 15V	110ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTB30N60IHLWG	ON Semiconductor	IGBT 600V 30A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 250W Switching Energy: 280µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 400ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고7,616	600V	60A	150A	2.3V @ 15V, 30A	250W	280µJ (off)	Standard	130nC	70ns/140ns	400V, 30A, 10 Ohm, 15V	400ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB45N60S2WG	ON Semiconductor	IGBT 45A 600V TO-247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 45A Power - Max: 300W Switching Energy: 360µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: -/151ns Test Condition: 400V, 45A, 10 Ohm, 15V Reverse Recovery Time (trr): 498ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고4,832	600V	90A	180A	2.3V @ 15V, 45A	300W	360µJ (off)	Standard	135nC	-/151ns	400V, 45A, 10 Ohm, 15V	498ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTG30N60FLWG	ON Semiconductor	IGBT 600V 60A 250W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 250W Switching Energy: 700µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 83ns/170ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고2,736	600V	60A	120A	1.9V @ 15V, 30A	250W	700µJ (on), 280µJ (off)	Standard	170nC	83ns/170ns	400V, 30A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTG35N65FL2WG	ON Semiconductor	IGBT 650V 60A 167W TO247 IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 300W Switching Energy: 840µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 72ns/132ns Test Condition: 400V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고3,424	650V	70A	120A	2V @ 15V, 35A	300W	840µJ (on), 280µJ (off)	Standard	125nC	72ns/132ns	400V, 35A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTD23T120F2SWK	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고6,704	1200V	-	120A	2.2V @ 15V, 25A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTB15N135IHRWG	ON Semiconductor	IGBT 1350V 15A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 15A Power - Max: 357W Switching Energy: 420µJ (off) Input Type: Standard Gate Charge: 156nC Td (on/off) @ 25°C: -/170ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고6,016	1350V	30A	60A	2.65V @ 15V, 15A	357W	420µJ (off)	Standard	156nC	-/170ns	600V, 15A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
NGTD23T120F2WP	ON Semiconductor	IGBT TRENCH FIELD STOP 1200V DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고4,640	1200V	-	120A	2.2V @ 15V, 25A	-	-	Standard	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
NGTG15N120FL2WG	ON Semiconductor	IGBT 1200V 15A TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 294W Switching Energy: 1.2mJ (on), 370µJ (off) Input Type: Standard Gate Charge: 109nC Td (on/off) @ 25°C: 64ns/128ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고7,856	1200V	30A	60A	2.4V @ 15V, 15A	294W	1.2mJ (on), 370µJ (off)	Standard	109nC	64ns/128ns	600V, 15A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NGTB15N120IHRWG	ON Semiconductor	IGBT 1200V 15A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 333W Switching Energy: 340µJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: -/170ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고2,464	1200V	30A	60A	2.5V @ 15V, 15A	333W	340µJ (off)	Standard	160nC	-/170ns	600V, 15A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247