Panasonic Electronic Components 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Panasonic Electronic Components 제품 - 트랜지스터 - FET, MOSFET - 단일

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제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2SK303000L
Panasonic Electronic Components

MOSFET N-CH 100V 8A UG-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-G1
  • Package / Case: U-G1
패키지: U-G1
재고23,412
MOSFET (Metal Oxide)
100V
8A (Tc)
4V, 10V
2.5V @ 1mA
-
290pF @ 10V
±20V
-
1W (Ta), 15W (Tc)
230 mOhm @ 4A, 10V
150°C (TJ)
Surface Mount
U-G1
U-G1
hot SK8403190L
Panasonic Electronic Components

MOSFET N-CH 30V 10A 8HSSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1.01mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSSO
  • Package / Case: 8-SMD, Flat Lead
패키지: 8-SMD, Flat Lead
재고36,000
MOSFET (Metal Oxide)
30V
10A (Ta), 19A (Tc)
4.5V, 10V
3V @ 1.01mA
6.3nC @ 4.5V
1092pF @ 10V
±20V
-
2W (Ta), 19W (Tc)
10 mOhm @ 70A, 10V
150°C (TJ)
Surface Mount
8-HSSO
8-SMD, Flat Lead
FK6K02010L
Panasonic Electronic Components

MOSFET N-CH 20V 4.5A WSMINI6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSMini6-F1-B
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고6,128
MOSFET (Metal Oxide)
20V
4.5A (Ta)
2.5V, 4V
1.3V @ 1mA
-
1730pF @ 10V
±10V
-
700mW (Ta)
17.5 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
WSMini6-F1-B
6-SMD, Flat Leads
2SK327700L
Panasonic Electronic Components

MOSFET N-CH 200V 2.5A UG-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 10W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1.25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-G1
  • Package / Case: U-G1
패키지: U-G1
재고24,192
MOSFET (Metal Oxide)
200V
2.5A (Tc)
10V
4V @ 1mA
-
170pF @ 20V
±20V
-
1W (Ta), 10W (Tc)
1.7 Ohm @ 1.25A, 10V
150°C (TJ)
Surface Mount
U-G1
U-G1
hot SK830321KL
Panasonic Electronic Components

MOSFET N-CH 30V 7A 8HSSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 519µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 658pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 13W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSSO
  • Package / Case: 8-SMD, Flat Lead
패키지: 8-SMD, Flat Lead
재고120,000
MOSFET (Metal Oxide)
30V
7A (Ta), 18A (Tc)
4.5V, 10V
3V @ 519µA
3.9nC @ 4.5V
658pF @ 10V
±20V
-
2W (Ta), 13W (Tc)
24 mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
8-HSSO
8-SMD, Flat Lead
FK3P02110L
Panasonic Electronic Components

MOSFET N CH 24V 3A PMCP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PMCP
  • Package / Case: 3-SMD, Non-Standard
패키지: 3-SMD, Non-Standard
재고3,056
MOSFET (Metal Oxide)
24V
3A (Ta)
2.5V
1.4V @ 1mA
-
1500pF @ 10V
±12V
-
-
20 mOhm @ 3A, 2.5V
150°C (TJ)
Surface Mount
3-PMCP
3-SMD, Non-Standard
MTM861280LBF
Panasonic Electronic Components

MOSFET P-CH 20V 1A WSSMINI6-F1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSSMini6-F1
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고4,000
MOSFET (Metal Oxide)
20V
1A (Ta)
2.5V, 4V
1.5V @ 1mA
-
80pF @ 10V
±12V
-
540mW (Ta)
420 mOhm @ 500mA, 4V
150°C (TJ)
Surface Mount
WSSMini6-F1
6-SMD, Flat Leads
MTM761110LBF
Panasonic Electronic Components

MOSFET P-CH 12V 4A WSMINI6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSMini6-F1-B
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고4,400
MOSFET (Metal Oxide)
12V
4A (Ta)
1.8V, 4.5V
1V @ 1mA
-
1400pF @ 10V
±8V
-
700mW (Ta)
34 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
WSMini6-F1-B
6-SMD, Flat Leads
FJ6K01010L
Panasonic Electronic Components

MOSFET P-CH 12V 4A WSMINI6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSMini6-F1-B
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고5,008
MOSFET (Metal Oxide)
12V
4A (Ta)
1.8V, 4.5V
1V @ 1mA
-
1400pF @ 10V
±8V
-
700mW (Ta)
34 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
WSMini6-F1-B
6-SMD, Flat Leads
hot MTM862270LBF
Panasonic Electronic Components

MOSFET N-CH 20V 2.2A WSSMINI6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSSMini6-F1
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고120,000
MOSFET (Metal Oxide)
20V
2.2A (Ta)
1.8V, 4V
1.3V @ 1mA
-
280pF @ 10V
±10V
-
540mW (Ta)
105 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
WSSMini6-F1
6-SMD, Flat Leads
hot MTM761100LBF
Panasonic Electronic Components

MOSFET P-CH 12V 4A WSMINI6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSMini6-F1-B
  • Package / Case: 6-SMD, Flat Leads
패키지: 6-SMD, Flat Leads
재고4,943,616
MOSFET (Metal Oxide)
12V
4A (Ta)
1.8V, 4V
1V @ 1mA
-
1200pF @ 10V
±8V
-
700mW (Ta)
42 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
WSMini6-F1-B
6-SMD, Flat Leads
hot XN0NE9200L
Panasonic Electronic Components

MOSFET P-CH 12V 1.2A MINI-5P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±15V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 800mA, 4V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Mini5-G1
  • Package / Case: SC-74A, SOT-753
패키지: SC-74A, SOT-753
재고231,156
MOSFET (Metal Oxide)
12V
1.2A (Ta)
4V
1.3V @ 1mA
-
-
±15V
Schottky Diode (Isolated)
600mW (Ta)
450 mOhm @ 800mA, 4V
125°C (TJ)
Surface Mount
Mini5-G1
SC-74A, SOT-753
hot 2N7002E
Panasonic Electronic Components

MOSFET N-CH 60V 300MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고3,824,988
MOSFET (Metal Oxide)
60V
300mA (Ta)
4.5V, 10V
3V @ 250µA
0.8nC @ 4.5V
40pF @ 10V
±20V
-
350mW (Ta)
3 Ohm @ 100mA, 10V
150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SK8603160L
Panasonic Electronic Components

MOSFET N-CH 30V 22A 8HSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 3.35mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3920pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 17A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSO
  • Package / Case: 8-PowerSMD, Flat Leads
패키지: 8-PowerSMD, Flat Leads
재고25,146
MOSFET (Metal Oxide)
30V
22A (Ta), 70A (Tc)
4.5V, 10V
3V @ 3.35mA
22nC @ 4.5V
3920pF @ 10V
±20V
-
2.8W (Ta), 28W (Tc)
3.3 mOhm @ 17A, 10V
150°C (TJ)
Surface Mount
8-HSO
8-PowerSMD, Flat Leads
SK8403180L
Panasonic Electronic Components

MOSFET N-CH 30V 12A 8HSSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1.45mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSSO
  • Package / Case: 8-SMD, Flat Lead
패키지: 8-SMD, Flat Lead
재고24,264
MOSFET (Metal Oxide)
30V
12A (Ta), 39A (Tc)
4.5V, 10V
3V @ 1.45mA
10nC @ 4.5V
1680pF @ 10V
±20V
-
2W (Ta), 19W (Tc)
7.1 mOhm @ 8.5A, 10V
150°C (TJ)
Surface Mount
8-HSSO
8-SMD, Flat Lead
SK8603190L
Panasonic Electronic Components

MOSFET N-CH 30V 12A 8HSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1.01mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSO
  • Package / Case: 8-PowerSMD, Flat Leads
패키지: 8-PowerSMD, Flat Leads
재고27,720
MOSFET (Metal Oxide)
30V
12A (Ta), 19A (Tc)
4.5V, 10V
3V @ 1.01mA
6.3nC @ 4.5V
1092pF @ 10V
±20V
-
2.7W (Ta), 19W (Tc)
10 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
8-HSO
8-PowerSMD, Flat Leads
hot MTM232230LBF
Panasonic Electronic Components

MOSFET N CH 20V 4.5A SMINI3-G1-B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMini3-G1-B
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고108,000
MOSFET (Metal Oxide)
20V
4.5A (Ta)
2.5V, 4.5V
1.3V @ 1mA
-
1200pF @ 10V
±10V
-
500mW (Ta)
28 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
SMini3-G1-B
SC-70, SOT-323
FK3506010L
Panasonic Electronic Components

MOSFET N-CH 60V 100MA SMINI3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMini3-F2-B
  • Package / Case: SC-85
패키지: SC-85
재고119,316
MOSFET (Metal Oxide)
60V
100mA (Ta)
2.5V, 4V
1.5V @ 1µA
-
12pF @ 3V
±12V
-
150mW (Ta)
12 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
SMini3-F2-B
SC-85
FK3503010L
Panasonic Electronic Components

MOSFET N-CH 30V 100MA SMINI3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMini3-F2-B
  • Package / Case: SC-85
패키지: SC-85
재고157,602
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 1µA
-
12pF @ 3V
±12V
-
150mW (Ta)
3 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
SMini3-F2-B
SC-85
FK3303010L
Panasonic Electronic Components

MOSFET N-CH 30V 100MA SSSMINI3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSSMini3-F2-B
  • Package / Case: SOT-723
패키지: SOT-723
재고97,680
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 1µA
-
12pF @ 3V
±12V
-
100mW (Ta)
3 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
SSSMini3-F2-B
SOT-723
FK3306010L
Panasonic Electronic Components

MOSFET N-CH 60V 100MA SSSMINI3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSSMini3-F2-B
  • Package / Case: SOT-723
패키지: SOT-723
재고550,896
MOSFET (Metal Oxide)
60V
100mA (Ta)
2.5V, 4V
1.5V @ 1µA
-
12pF @ 3V
±12V
-
100mW (Ta)
12 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
SSSMini3-F2-B
SOT-723
hot MTM231232LBF
Panasonic Electronic Components

MOSFET P-CH 20V 3A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3 (SOT323)
  • Package / Case: SC-70, SOT-323
패키지: SC-70, SOT-323
재고373,800
MOSFET (Metal Oxide)
20V
3A (Ta)
2.5V, 4.5V
1.3V @ 1mA
-
1000pF @ 10V
±10V
-
500mW (Ta)
55 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
FJ4B01100L1
Panasonic Electronic Components

MOSFET P-CH 12V 2.2A XLGA004

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 1.5A, 4.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: XLGA004-W-0808-RA01
  • Package / Case: 4-XFLGA, CSP
패키지: -
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MOSFET (Metal Oxide)
12 V
2.2A (Ta)
1.5V, 4.5V
1V @ 1.2mA
7 nC @ 4.5 V
459 pF @ 10 V
±8V
-
360mW (Ta)
74mOhm @ 1.5A, 4.5V
-40°C ~ 85°C (TA)
Surface Mount
XLGA004-W-0808-RA01
4-XFLGA, CSP
FJ4B01110L1
Panasonic Electronic Components

MOSFET P-CH 12V 1.4A ALGA004

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 598µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 340mW (Ta)
  • Rds On (Max) @ Id, Vgs: 153mOhm @ 700mA, 4.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ALGA004-W-0606-RA01
  • Package / Case: 4-XFLGA, CSP
패키지: -
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MOSFET (Metal Oxide)
12 V
1.4A (Ta)
1.5V, 4.5V
1V @ 598µA
3.3 nC @ 4.5 V
226 pF @ 10 V
±8V
-
340mW (Ta)
153mOhm @ 700mA, 4.5V
-40°C ~ 85°C (TA)
Surface Mount
ALGA004-W-0606-RA01
4-XFLGA, CSP
FJ4B01120L1
Panasonic Electronic Components

MOSFET P-CH 12V 2.6A ULGA004

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 2A, 4.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ULGA004-W-1010-RA01
  • Package / Case: 4-XFLGA, CSP
패키지: -
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MOSFET (Metal Oxide)
12 V
2.6A (Ta)
1.5V, 4.5V
1V @ 2mA
10.7 nC @ 4.5 V
814 pF @ 10 V
±8V
-
370mW (Ta)
51mOhm @ 2A, 4.5V
-40°C ~ 85°C (TA)
Surface Mount
ULGA004-W-1010-RA01
4-XFLGA, CSP
FK4B01100L1
Panasonic Electronic Components

MOSFET N-CH 12V 3.4A XLGA004

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 236µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 4.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: XLGA004-W-0808-RA01
  • Package / Case: 4-XFLGA, CSP
패키지: -
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MOSFET (Metal Oxide)
12 V
3.4A (Ta)
1.5V, 4.5V
1V @ 236µA
5.8 nC @ 4.5 V
275 pF @ 10 V
±8V
-
360mW (Ta)
30mOhm @ 1.5A, 4.5V
-40°C ~ 85°C (TA)
Surface Mount
XLGA004-W-0808-RA01
4-XFLGA, CSP
FK4B01110L1
Panasonic Electronic Components

MOSFET N-CH 12V 2.3A ALGA004

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 118µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.55 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 340mW (Ta)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ALGA004-W-0606-RA01
  • Package / Case: 4-XFLGA, CSP
패키지: -
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MOSFET (Metal Oxide)
12 V
2.3A (Ta)
1.5V, 4.5V
1V @ 118µA
2.55 nC @ 4.5 V
274 pF @ 10 V
±8V
-
340mW (Ta)
64mOhm @ 1.5A, 4.5V
-40°C ~ 85°C (TA)
Surface Mount
ALGA004-W-0606-RA01
4-XFLGA, CSP
FK4B01120L1
Panasonic Electronic Components

MOSFET N-CH 12V 3.9A ULGA004

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 394µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 1.5A, 4.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ULGA004-W-1010-RA01
  • Package / Case: 4-XFLGA, CSP
패키지: -
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MOSFET (Metal Oxide)
12 V
3.9A (Ta)
1.5V, 4.5V
1V @ 394µA
7 nC @ 4.5 V
490 pF @ 10 V
±8V
-
370mW (Ta)
24mOhm @ 1.5A, 4.5V
-40°C ~ 85°C (TA)
Surface Mount
ULGA004-W-1010-RA01
4-XFLGA, CSP