Renesas Electronics America 제품 - 트랜지스터 - 양극(BJT) - 단일 | Heisener Electronics
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Renesas Electronics America 제품 - 트랜지스터 - 양극(BJT) - 단일

기록 1
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이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot 2SC3624-T1B-A
Renesas Electronics America

TRANS NPN 50V 0.15A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
패키지: TO-236-3, SC-59, SOT-23-3
재고162,672
150mA
50V
300mV @ 5mA, 50mA
100nA (ICBO)
1000 @ 1mA, 5V
200mW
250MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59