Rohm Semiconductor 제품 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
EMH51T2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR(WITH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고24,000	100mA	50V	22kOhms	22kOhms	60 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMH52T2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR(WITH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고23,715	100mA	50V	47kOhms	47kOhms	80 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMF18T2R	Rohm Semiconductor	TRANS DIGITAL BJT NPN/PNP 50V 10 Transistor Type: 1 NPN - Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 140MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	Request a Quote	100mA, 150mA	50V	47kOhms	47kOhms	68 @ 5mA, 5V / 180 @ 1mA, 6V	300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA	500nA, 100nA (ICBO)	250MHz, 140MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMH53T2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR(WITH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고23,769	100mA	50V	4.7kOhms	-	100 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMD2FHAT2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고357	100mA	-	22kOhms	22kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMB11FHAT2R	Rohm Semiconductor	TRANS 2PNP 100MA EMT6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고10,140	100mA	-	10kOhms	10kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMB52T2R	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (WITH Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고24,000	100mA	50V	47kOhms	47kOhms	80 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMB53T2R	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (WITH Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고24,000	100mA	50V	4kOhms	-	100 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMH1NFHATN	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: -	재고22,389	100mA	50V	22kOhms	22kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMB3FHAT2R	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (CORR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고23,982	100mA	50V	4.7kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMD2NFHATR	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: -	재고48	100mA	50V	22kOhms	22kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMH2FHAT2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	Request a Quote	100mA	50V	47kOhms	47kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMB59T2R	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (WITH Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고20,640	100mA	50V	10kOhms	47kOhms	80 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMD3FHAT2R	Rohm Semiconductor	GENERAL PURPOSE (DUAL DIGITAL TR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고8,880	100mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMD72T2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고56,046	100mA	50V	4.7kOhms	47kOhms	80 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMB3NFHATN	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (WITH Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: -	재고7,647	100mA	50V	4.7kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMH25NTN	Rohm Semiconductor	NPN+NPN, SOT-363, DUAL DIGITAL T Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: -	재고8,736	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMH2NFHATN	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: -	재고2,040	100mA	50V	47kOhms	47kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMD12NFHATR	Rohm Semiconductor	TRANS NPN/PNP PREBIAS 0.15W UMT6 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
EMH3FHAT2R	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고25,935	100mA	50V	4.7kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMF20T2R	Rohm Semiconductor	TRANS DIGITAL BJT NPN 50V 150MA/ Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 180MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	Request a Quote	100mA, 150mA	50V	47kOhms	47kOhms	20 @ 20mA, 5V / 180 @ 1mA, 6V	300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA	500nA, 100nA (ICBO)	250MHz, 180MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
IMX18T208	Rohm Semiconductor	TRANSISTOR DUAL SC-74; CUSTOM FO Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UMD22NFHATR	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: -	재고25,650	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
EMD9FHAT2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	Request a Quote	100mA	-	10kOhms	47kOhms	68 @ 5mA, 5V	300mV @ 250µA, 5mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMD52T2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	재고24,000	100mA	50V	22kOhms	22kOhms	60 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMF23T2R	Rohm Semiconductor	TRANS DIGITAL BJT NPN/PNP 50V 10 Transistor Type: 1 NPN - Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA, 100nA (ICBO) Frequency - Transition: 250MHz, 140MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	Request a Quote	100mA, 150mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V / 180 @ 1mA, 6V	300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA	500nA, 100nA (ICBO)	250MHz, 140MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
EMB18T2R	Rohm Semiconductor	TRANS DIGITAL BJT PNP 50V 100MA Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: -	Request a Quote	100mA	50V	22kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
UMB4NFHATN	Rohm Semiconductor	PNP+PNP DIGITAL TRANSISTOR (CORR Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: -	재고8,955	100mA	50V	10kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6

EMH51T2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR(WITH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고24,000

100mA

50V

22kOhms

60 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMH52T2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR(WITH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고23,715

100mA

50V

47kOhms

80 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMF18T2R

Rohm Semiconductor

TRANS DIGITAL BJT NPN/PNP 50V 10

Transistor Type: 1 NPN - Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 140MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

Request a Quote

100mA, 150mA

50V

47kOhms

68 @ 5mA, 5V / 180 @ 1mA, 6V

300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA

500nA, 100nA (ICBO)

250MHz, 140MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMH53T2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR(WITH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고23,769

100mA

50V

4.7kOhms

-

100 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMD2FHAT2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고357

100mA

-

22kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMB11FHAT2R

Rohm Semiconductor

TRANS 2PNP 100MA EMT6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고10,140

100mA

-

10kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMB52T2R

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (WITH

Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고24,000

100mA

50V

47kOhms

80 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMB53T2R

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (WITH

Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고24,000

100mA

50V

4kOhms

-

100 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMH1NFHATN

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: -

재고22,389

100mA

50V

22kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMB3FHAT2R

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고23,982

100mA

50V

4.7kOhms

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMD2NFHATR

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: -

재고48

100mA

50V

22kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMH2FHAT2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

Request a Quote

100mA

50V

47kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMB59T2R

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (WITH

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고20,640

100mA

50V

10kOhms

47kOhms

80 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMD3FHAT2R

Rohm Semiconductor

GENERAL PURPOSE (DUAL DIGITAL TR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고8,880

100mA

50V

10kOhms

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMD72T2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고56,046

100mA

50V

4.7kOhms

47kOhms

80 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMB3NFHATN

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (WITH

Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: -

재고7,647

100mA

50V

4.7kOhms

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMH25NTN

Rohm Semiconductor

NPN+NPN, SOT-363, DUAL DIGITAL T

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: -

재고8,736

100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMH2NFHATN

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: -

재고2,040

100mA

50V

47kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMD12NFHATR

Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

EMH3FHAT2R

Rohm Semiconductor

NPN+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고25,935

100mA

50V

4.7kOhms

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMF20T2R

Rohm Semiconductor

TRANS DIGITAL BJT NPN 50V 150MA/

Transistor Type: 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 180MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

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100mA, 150mA

50V

47kOhms

20 @ 20mA, 5V / 180 @ 1mA, 6V

300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA

500nA, 100nA (ICBO)

250MHz, 180MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

IMX18T208

Rohm Semiconductor

TRANSISTOR DUAL SC-74; CUSTOM FO

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

UMD22NFHATR

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: -

재고25,650

100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

EMD9FHAT2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (CORR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

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100mA

-

10kOhms

47kOhms

68 @ 5mA, 5V

300mV @ 250µA, 5mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMD52T2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

재고24,000

100mA

50V

22kOhms

60 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMF23T2R

Rohm Semiconductor

TRANS DIGITAL BJT NPN/PNP 50V 10

Transistor Type: 1 NPN - Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
Frequency - Transition: 250MHz, 140MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

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100mA, 150mA

50V

10kOhms

30 @ 5mA, 5V / 180 @ 1mA, 6V

300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA

500nA, 100nA (ICBO)

250MHz, 140MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

EMB18T2R

Rohm Semiconductor

TRANS DIGITAL BJT PNP 50V 100MA

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: -

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100mA

50V

22kOhms

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

UMB4NFHATN

Rohm Semiconductor

PNP+PNP DIGITAL TRANSISTOR (CORR

Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: -

재고8,955

100mA

50V

10kOhms

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6