페이지 6 - Rohm Semiconductor 제품 - 트랜지스터 - 양극(BJT) - 단일, 프리 바이어스드

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
DTC144ECAHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 350 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고10,593	100 mA	-	47 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	350 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTC144VCAT116	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고57	100 mA	50 V	47 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTC113ZMT2L	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A VMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	패키지: -	재고14,685	100 mA	50 V	1 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTC123JE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: -	재고9,000	100 mA	50 V	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTA124EU3HZGT106	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A UMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: -	재고7,095	100 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTA113ZCAT116	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고5,997	100 mA	50 V	1 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTC143ZU3HZGT106	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: -	재고10,344	100 mA	50 V	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTA124TCAT116	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고9,000	100 mA	50 V	22 kOhms	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTC123EE3HZGTL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: -	재고18,000	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTC114YE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: -	재고7,470	100 mA	50 V	47 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTB114EKFRAT146	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.5A SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: -	Request a Quote	500 mA	50 V	10 kOhms	10 kOhms	56 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DTD123ECHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.5A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고17,970	500 mA	50 V	2.2 kOhms	2.2 kOhms	39 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTA143ZEBHZGTL	Rohm Semiconductor	TRANS PREBIAS PNP 0.1A EMT3F Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	패키지: -	재고4,488	100 mA	-	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	150 mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTC115GU3HZGT106	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: -	재고9,000	100 mA	50 V	-	100 kOhms	82 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTA114WU3T106	Rohm Semiconductor	PNP, SOT-323, R1R2 LEAK Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: -	Request a Quote	100 mA	50 V	10 kOhms	4.7 kOhms	24 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTA124EE3HZGTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: -	재고9,000	100 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTC143ZCAHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 350 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고177,069	100 mA	-	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	350 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTD113ZSTP	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.5A SPT Transistor Type: NPN - Pre-Biased + Diode Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	패키지: -	Request a Quote	500 mA	50 V	1 kOhms	10 kOhms	82 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200 MHz	300 mW	Through Hole	SC-72 Formed Leads	SPT
DTC124EUBHZGTL	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A UMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMT3F	패키지: -	재고7,620	100 mA	-	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	200 mW	Surface Mount	SC-85	UMT3F
DTA124ECAHZGT116	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고7,305	100 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DTA143TE3HZGTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: -	재고9,000	100 mA	50 V	4.7 kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTA114GU3HZGT106	Rohm Semiconductor	PNP, SOT-323, R2 ALONE TYPE Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: -	Request a Quote	100 mA	50 V	10 kOhms	-	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTA114YMFHAT2L	Rohm Semiconductor	TRANS PREBIAS PNP 0.1A VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	패키지: -	Request a Quote	100 mA	-	10 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTC143XEBHZGTL	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A EMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	패키지: -	재고177	100 mA	-	4.7 kOhms	10 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 10mA	-	250 MHz	150 mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
DTA123JE3HZGTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	패키지: -	재고8,700	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
DTC123JUBHZGTL	Rohm Semiconductor	TRANS PREBIAS NPN 0.1A UMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMT3F	패키지: -	재고5,673	100 mA	-	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	-	250 MHz	200 mW	Surface Mount	SC-85	UMT3F
DTA143EMFHAT2L	Rohm Semiconductor	TRANS PREBIAS PNP 0.1A VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	패키지: -	재고20,406	100 mA	-	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTD123TCHZGT116	Rohm Semiconductor	TRANS PREBIAS NPN 0.5A SST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: -	재고35,538	500 mA	-	2.2 kOhms	-	100 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA (ICBO)	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3

DTC144ECAHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고10,593

100 mA

-

47 kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

350 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTC144VCAT116

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고57

100 mA

50 V

47 kOhms

10 kOhms

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTC113ZMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A VMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

패키지: -

재고14,685

100 mA

50 V

1 kOhms

10 kOhms

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SOT-723

VMT3

DTC123JE3TL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: -

재고9,000

100 mA

50 V

4.7 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTA124EU3HZGT106

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A UMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: -

재고7,095

100 mA

50 V

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTA113ZCAT116

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고5,997

100 mA

50 V

1 kOhms

10 kOhms

33 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTC143ZU3HZGT106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: -

재고10,344

100 mA

50 V

4.7 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTA124TCAT116

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고9,000

100 mA

50 V

22 kOhms

-

100 @ 1mA, 5V

300mV @ 500µA, 5mA

500nA (ICBO)

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTC123EE3HZGTL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: -

재고18,000

100 mA

50 V

2.2 kOhms

20 @ 20mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTC114YE3TL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: -

재고7,470

100 mA

50 V

47 kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTB114EKFRAT146

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.5A SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: -

Request a Quote

500 mA

50 V

10 kOhms

56 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DTD123ECHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.5A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고17,970

500 mA

50 V

2.2 kOhms

39 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTA143ZEBHZGTL

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A EMT3F

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

패키지: -

재고4,488

100 mA

-

4.7 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250 MHz

150 mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

DTC115GU3HZGT106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: -

재고9,000

100 mA

50 V

-

100 kOhms

82 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTA114WU3T106

Rohm Semiconductor

PNP, SOT-323, R1R2 LEAK

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: -

Request a Quote

100 mA

50 V

10 kOhms

4.7 kOhms

24 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTA124EE3HZGTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: -

재고9,000

100 mA

50 V

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTC143ZCAHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고177,069

100 mA

-

4.7 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250 MHz

350 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTD113ZSTP

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.5A SPT

Transistor Type: NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

패키지: -

Request a Quote

500 mA

50 V

1 kOhms

10 kOhms

82 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

200 MHz

300 mW

Through Hole

SC-72 Formed Leads

SPT

DTC124EUBHZGTL

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A UMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F

패키지: -

재고7,620

100 mA

-

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

200 mW

Surface Mount

SC-85

UMT3F

DTA124ECAHZGT116

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고7,305

100 mA

50 V

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

DTA143TE3HZGTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: -

재고9,000

100 mA

50 V

4.7 kOhms

-

100 @ 1mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTA114GU3HZGT106

Rohm Semiconductor

PNP, SOT-323, R2 ALONE TYPE

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: -

Request a Quote

100 mA

50 V

10 kOhms

-

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTA114YMFHAT2L

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

패키지: -

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100 mA

-

10 kOhms

47 kOhms

68 @ 5mA, 5V

300mV @ 250µA, 5mA

-

250 MHz

150 mW

Surface Mount

SOT-723

VMT3

DTC143XEBHZGTL

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A EMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

패키지: -

재고177

100 mA

-

4.7 kOhms

10 kOhms

30 @ 10mA, 5V

300mV @ 500µA, 10mA

-

250 MHz

150 mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

DTA123JE3HZGTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

패키지: -

재고8,700

100 mA

50 V

2.2 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

150 mW

Surface Mount

SC-75, SOT-416

EMT3

DTC123JUBHZGTL

Rohm Semiconductor

TRANS PREBIAS NPN 0.1A UMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F

패키지: -

재고5,673

100 mA

-

2.2 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

-

250 MHz

200 mW

Surface Mount

SC-85

UMT3F

DTA143EMFHAT2L

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

패키지: -

재고20,406

100 mA

-

4.7 kOhms

30 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

150 mW

Surface Mount

SOT-723

VMT3

DTD123TCHZGT116

Rohm Semiconductor

TRANS PREBIAS NPN 0.5A SST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: -

재고35,538

500 mA

-

2.2 kOhms

-

100 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA (ICBO)

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3